公开(公告)号：US20160225849A1

公开(公告)日：2016-08-04

申请号：US14613983

申请日：2015-02-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chun Yu WONG ,  Min-hwa CHI ,  Ashish BARASKAR ,  Jagar SINGH

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3083 ,  H01L21/31116 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/78696

Abstract: Methods are presented for fabricating nanowire structures, such as one or more nanowire field effect transistors. The methods include, for instance: providing a substrate and forming a fin above the substrate so that the fin has a first sidewall including one or more elongate first sidewall protrusions and a second sidewall including one or more elongate second sidewall protrusions, with the one or more elongate second sidewall protrusions being substantially aligned with the one or more elongate first sidewall protrusions; and, anisotropically etching the fin with the elongate first sidewall protrusions and the elongate second sidewall protrusions to define the one or more nanowires. The etchant may be chosen to selectively etch along a pre-defined crystallographic plane, such as the (111) crystallographic plane, to form the nanowire structures.

Abstract translation: 提出了用于制造纳米线结构的方法，例如一个或多个纳米线场效应晶体管。 所述方法包括例如：提供衬底并在衬底上形成翅片，使得翅片具有包括一个或多个细长的第一侧壁突出部的第一侧壁和包括一个或多个细长的第二侧壁突出部的第二侧壁， 更细长的第二侧壁突起基本上与一个或多个细长的第一侧壁突起对准; 并且用细长的第一侧壁突起和细长的第二侧壁突起各向异性地蚀刻翅片以限定一个或多个纳米线。 可以选择蚀刻剂以沿着预定义的结晶平面（例如（111）晶面）选择性地蚀刻，以形成纳米线结构。

公开(公告)号：US20170141031A1

公开(公告)日：2017-05-18

申请号：US15421698

申请日：2017-02-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chun Yu WONG ,  Jagar SINGH ,  Ashish BARASKAR ,  Min-hwa CHI

IPC: H01L23/525 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L23/5256 ,  H01L21/0226 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/283 ,  H01L21/3205 ,  H01L27/11206 ,  H01L29/0673 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor fuses with nanowire fuse links and fabrication methods thereof are presented. The methods include, for instance: fabricating a semiconductor fuse, the semiconductor fuse including at least one nanowire fuse link, and the fabricating including: forming at least one nanowire, the at least one nanowire including a semiconductor material; and reacting the at least one nanowire with a metal to form the at least one nanowire fuse link of the semiconductor fuse, the at least one nanowire fuse link including a semiconductor-metal alloy. In another aspect, a structure is presented. The structure includes: a semiconductor fuse, the semiconductor fuse including: at least one nanowire fuse link, the at least one nanowire fuse link including a semiconductor-metal alloy.

公开(公告)号：US20160284643A1

公开(公告)日：2016-09-29

申请号：US14865589

申请日：2015-09-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Chun Yu WONG ,  Jagar SINGH ,  Ashish BARASKAR ,  Min-hwa CHI

IPC: H01L23/525 ,  H01L29/78 ,  H01L29/06 ,  H01L27/112 ,  H01L23/528 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/283 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L23/5256 ,  H01L21/0226 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/283 ,  H01L21/3205 ,  H01L27/11206 ,  H01L29/0673 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor fuses with nanowire fuse links and fabrication methods thereof are presented. The methods include, for instance: fabricating a semiconductor fuse, the semiconductor fuse including at least one nanowire fuse link, and the fabricating including: forming at least one nanowire, the at least one nanowire including a semiconductor material; and reacting the at least one nanowire with a metal to form the at least one nanowire fuse link of the semiconductor fuse, the at least one nanowire fuse link including a semiconductor-metal alloy. In another aspect, a structure is presented. The structure includes: a semiconductor fuse, the semiconductor fuse including: at least one nanowire fuse link, the at least one nanowire fuse link including a semiconductor-metal alloy.

Abstract translation: 提出了具有纳米线熔断体的半导体熔丝及其制造方法。 所述方法包括例如：制造半导体熔丝，所述半导体熔丝包括至少一个纳米线熔断体，所述制造包括：形成至少一个纳米线，所述至少一个纳米线包括半导体材料; 并且使所述至少一个纳米线与金属反应以形成所述半导体熔丝的所述至少一个纳米线熔断体，所述至少一个纳米线熔断体包括半导体 - 金属合金。 在另一方面，提出了一种结构。 所述结构包括：半导体熔丝，所述半导体熔丝包括：至少一个纳米线熔断体，所述至少一个纳米线熔断体包括半导体 - 金属合金。