公开(公告)号：US09541839B2

公开(公告)日：2017-01-10

申请号：US14637459

申请日：2015-03-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik Robert Hosler

IPC: H05G2/00 ,  G03F7/20

CPC classification number: G03F7/70033 ,  G03F7/70008 ,  G03F7/70208 ,  G03F7/70991 ,  G21K1/067 ,  G21K2201/064 ,  G21K2201/065 ,  H05G2/008

Abstract: Methods for receiving a high-energy EUV beam and distributing EUV sub-beams to photolithography scanners and the resulting device are disclosed. Embodiments include receiving a high-energy primary EUV beam at a primary splitting optical assembly; splitting the primary EUV beam into primary EUV sub-beams; reflecting the primary EUV sub-beams to beam-splitting optical arrays; splitting the primary EUV sub-beams into secondary EUV sub-beams; reflecting the secondary EUV sub-beams to EUV distribution optical arrays; and distributing simultaneously the secondary EUV sub-beams to scanners.

Abstract translation: 公开了用于接收高能EUV光束并将EUV子光束分布到光刻扫描仪和所得到的装置的方法。 实施例包括在主分裂光学组件处接收高能量的初级EUV光束; 将主EUV波束分为主EUV子波束; 将主要EUV子光束反射到分束光学阵列; 将主EUV子光束分成次级EUV子光束; 将次级EUV子光束反射到EUV分配光学阵列; 并且将次级EUV子光束同时分配到扫描仪。

公开(公告)号：US20160165710A1

公开(公告)日：2016-06-09

申请号：US14562570

申请日：2014-12-05

Applicant: GlobalFoundries Inc.

Inventor： Erik Robert Hosler

IPC: H05G2/00 ,  H01S3/23 ,  H01S3/04 ,  H01S3/09 ,  H01S3/00

CPC classification number: H05G2/008 ,  G21K1/067 ,  H01S3/0903

Abstract: At least one method, apparatus and system for providing an extreme ultraviolet beam for processing semiconductor wafers are disclosed. A level of the EUV beam is monitored. A determination is made as to whether the level of the EUV beam is below a predetermined level. In response to determining that the level of the EUV beam is below the predetermined level, a determination is made as to whether the output of at least one of the first or second laser devices has decreased from an initial level. The output of the at least one of the first or second laser devices is increased in response to determining that the output of at least one of the first or second laser devices has decreased from an initial level.

Abstract translation: 公开了至少一种用于提供用于处理半导体晶片的极紫外光束的方法，装置和系统。 监视EUV波束的电平。 确定EUV波束的电平是否低于预定电平。 响应于确定EUV波束的电平低于预定电平，确定第一或第二激光装置中的至少一个的输出是否从初始电平降低。 响应于确定第一或第二激光装置中的至少一个的输出已经从初始水平减小，第一或第二激光装置中的至少一个激光装置的输出增加。

公开(公告)号：US09844124B2

公开(公告)日：2017-12-12

申请号：US14645871

申请日：2015-03-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik Robert Hosler ,  Pawitter J. S. Mangat

IPC: H05G2/00 ,  H01S3/09

CPC classification number: H05G2/00 ,  H01S3/0903

Abstract: At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.

公开(公告)号：US20170019982A1

公开(公告)日：2017-01-19

申请号：US14803068

申请日：2015-07-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik Robert Hosler ,  Moseh Preil

IPC: H05G2/00 ,  G21K5/08

CPC classification number: H05H7/04 ,  H05G2/00

Abstract: At least one method, apparatus and system for providing a plurality of optical beams, such as EUV beams. A first electron beam is received. The first electron beam is converted into at least a second electron beam and a third electron beam. The second and third second and third electron beams to an undulator. Using the undulator for generating a plurality of output beams using the at least second and third electron beams. The output beams respectively comprises a plurality of optical beam components and a plurality of electron beam component. A first optical beam component of the plurality of optical beam components is provided to a first processing tool.

Abstract translation: 用于提供诸如EUV波束的多个光束的至少一种方法，装置和系统。 接收第一电子束。 第一电子束被转换成至少第二电子束和第三电子束。 第二和第三个第二和第三个电子束到波动器。 使用波动器来使用至少第二和第三电子束产生多个输出光束。 输出光束分别包括多个光束分量和多个电子束分量。 多个光束分量的第一光束分量被提供给第一处理工具。

公开(公告)号：US20160270200A1

公开(公告)日：2016-09-15

申请号：US14645871

申请日：2015-03-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erik Robert Hosler ,  Pawitter J.S. Mangat

IPC: H05G2/00

CPC classification number: H05G2/00 ,  H01S3/0903

Abstract: At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.

Abstract translation: 公开了至少一种用于为计量工具提供捕获同步加速器辐射的方法，装置和系统。 提供了使用第一发光装置的光束。 第一发光器件包括第一电子路径弯曲部。 第一同步加速器辐射从第一电子路径弯曲部提供到被配置为使用第一同步加速器辐射进行计量检查的第一测量工具。

公开(公告)号：US09392679B2

公开(公告)日：2016-07-12

申请号：US14562570

申请日：2014-12-05

Applicant: GlobalFoundries Inc.

Inventor： Erik Robert Hosler

IPC: H01S3/23 ,  H05G2/00 ,  H01S3/09 ,  H01S3/00 ,  H01S3/04

CPC classification number: H05G2/008 ,  G21K1/067 ,  H01S3/0903

Abstract: At least one method, apparatus and system for providing an extreme ultraviolet beam for processing semiconductor wafers are disclosed. A level of the EUV beam is monitored. A determination is made as to whether the level of the EUV beam is below a predetermined level. In response to determining that the level of the EUV beam is below the predetermined level, a determination is made as to whether the output of at least one of the first or second laser devices has decreased from an initial level. The output of the at least one of the first or second laser devices is increased in response to determining that the output of at least one of the first or second laser devices has decreased from an initial level.

Abstract translation: 公开了至少一种用于提供用于处理半导体晶片的极紫外光束的方法，装置和系统。 监视EUV波束的电平。 确定EUV波束的电平是否低于预定电平。 响应于确定EUV波束的电平低于预定电平，确定第一或第二激光装置中的至少一个的输出是否从初始电平降低。 响应于确定第一或第二激光装置中的至少一个的输出已经从初始水平减小，第一或第二激光装置中的至少一个激光装置的输出增加。