公开(公告)号：US09899257B1

公开(公告)日：2018-02-20

申请号：US15448873

申请日：2017-03-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jin Z. Wallner ,  Haoren Zhuang

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/285 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L23/535

CPC classification number: H01L21/76829 ,  H01L21/28518 ,  H01L21/76283 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823418 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/535 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847

Abstract: A method of forming a shallow trench isolation (STI) in a semiconductor-on-insulator (SOI) substrate, including an etch stop liner, to mitigate punch through in SOI substrates is disclosed. The method may include providing an SOI substrate, forming an STI recess within the SOI substrate, forming a first STI dielectric fill within the STI recess wherein a top surface of the first STI dielectric fill is at a location above a top surface of the base substrate, forming a first etch stop liner on the first STI dielectric fill, and forming a second STI dielectric fill over the first etch stop liner. The first etch stop liner is configured so that portion of a contact opening later formed is positioned over the first etch stop liner such that the etch stop liner prevents punch through into the STI. The method may also include forming a second etch stop liner after forming the STI recess and before forming the first STI dielectric fill.

公开(公告)号：US09887135B1

公开(公告)日：2018-02-06

申请号：US15581510

申请日：2017-04-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jin Wallner ,  Haoren Zhuang

IPC: H01L21/033 ,  H01L21/8234 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/3115 ,  G03F7/00 ,  H01L21/308

CPC classification number: H01L21/823437 ,  G03F7/0002 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31155 ,  H01L21/32139 ,  H01L29/6653 ,  H01L29/6656

Abstract: A method includes forming a first mandrel layer above a first process layer. A first implant region is formed in the first mandrel layer. The first mandrel layer is patterned to define a plurality of first mandrel elements. At least a first subset of the first mandrel elements is formed from the first mandrel layer outside the first implant region and a second subset of the first mandrel elements is formed from the first implant region. First spacers are formed on sidewalls of the plurality of first mandrel elements. The first subset of the first mandrel elements are selectively removed without removing the second subset of the first mandrel elements. The first process layer is patterned using the first spacers and the second subset of the first mandrel elements as an etch mask.