公开(公告)号：US20160163859A1

公开(公告)日：2016-06-09

申请号：US14560428

申请日：2014-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xusheng WU ,  Hongxiang MO ,  Qi ZHANG ,  Byoung-Gi MIN ,  Jeasung PARK

IPC: H01L29/78 ,  H01L21/306 ,  H01L29/66 ,  H01L21/02 ,  H01L29/161 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/02057 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/30604 ,  H01L21/823462 ,  H01L29/161 ,  H01L29/165 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636

Abstract: Methods of using a nitride to protect source/drain regions during dummy gate removal and the resulting devices are disclosed. Embodiments include forming an oxide layer on a substrate; forming a nitride protection layer on the oxide layer; forming a dummy gate layer on the nitride protection layer; patterning the oxide, nitride, and dummy gate layers forming first and second dummy gate stacks on first and second portions of the substrate, each dummy gate stack comprising a dummy gate, the nitride protection layer, and the oxide layer, wherein a portion of the oxide layer extends along the substrate beyond side edges of the dummy gate; forming first and second source/drain cavities in the substrate at opposite sides of the first and second dummy gate stacks, respectively; growing first and second eSiGe source/drain regions in the first and second source/drain cavities, respectively; and removing the first dummy gate and the second dummy gate stack.

Abstract translation: 公开了在伪栅极去除期间使用氮化物来保护源极/漏极区域的方法以及所得到的器件。 实施例包括在基板上形成氧化物层; 在氧化物层上形成氮化物保护层; 在氮化物保护层上形成虚拟栅极层; 图案化在衬底的第一和第二部分上形成第一和第二虚拟栅极堆叠的氧化物，氮化物和伪栅极层，每个伪栅极堆叠包括伪栅极，氮化物保护层和氧化物层，其中一部分 氧化物层沿着衬底延伸超过虚拟栅极的侧边缘; 在第一和第二伪栅极堆叠的相对侧分别在衬底中形成第一和第二源极/漏极空腔; 分别在第一和第二源极/漏极腔中生长第一和第二eSiGe源极/漏极区域; 以及去除第一伪栅极和第二虚拟栅极堆叠。

公开(公告)号：US20150303115A1

公开(公告)日：2015-10-22

申请号：US14257899

申请日：2014-04-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yiqun LIU ,  Jeasung PARK ,  Chandra REDDY

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/28 ,  H01L27/088

CPC classification number: H01L21/82345 ,  H01L21/28088 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/517

Abstract: Methodologies and resulting devices are provided for modified FET threshold voltages. Embodiments include: providing an active region of a transistor on a semiconductor substrate; depositing a workfunction metal on the active region; and modifying a threshold voltage of the transistor by treating the workfunction metal with oxygen. Other embodiments include: providing first and second active regions in a semiconductor substrate for first and second transistors, respectively; forming a first workfunction metal on the first active region; forming a second workfunction metal on the second active region; and modifying a first threshold voltage level of the first transistor, a second threshold voltage level of the second transistor, or a combination thereof by treating the first workfunction metal, second workfunction metal, or a combination thereof with oxygen, wherein the second threshold voltage level is greater than the first threshold voltage level.

Abstract translation: 为修改的FET阈值电压提供了方法和结果的器件。 实施例包括：在半导体衬底上提供晶体管的有源区; 在活性区域上沉积功函数金属; 以及通过用氧处理所述功函数金属来修改所述晶体管的阈值电压。 其他实施例包括：分别在用于第一和第二晶体管的半导体衬底中提供第一和第二有源区; 在所述第一活性区上形成第一功函数金属; 在所述第二活性区上形成第二功函数金属; 以及通过处理所述第一功函数金属，所述第二功函数金属或其与氧的组合来修改所述第一晶体管的第一阈值电压电平，所述第二晶体管的第二阈值电压电平或其组合，其中所述第二阈值电压电平 大于第一阈值电压电平。