中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.012 seconds)

    Creating knowledge base for optical proximity correction to reduce sub-resolution assist feature printing
    1.
    发明授权
    Creating knowledge base for optical proximity correction to reduce sub-resolution assist feature printing 有权

    公开(公告)号：US10386714B2

    公开(公告)日：2019-08-20

    申请号：US15401299

    申请日：2017-01-09

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Kriteshwar K. Kohli ,  Mark N. Jobes ,  Ioana C. Graur

    IPC: G06F17/50 ,  G03F1/36

    Abstract: Embodiments of the present disclosure include methods, program products, and systems for creating a knowledge base for optical proximity correction (OPC). Methods according to the disclosure can include: fabricating a circuit using a proposed IC layout; identifying a plurality of features in an image of the fabricated circuit; predicting, based on the identifying and a predictive algorithm, whether the fabricated circuit includes a printed sub-resolution assist feature (SRAF) from the proposed IC layout; determining the predicting as being correct when the fabricated circuit includes the printed SRAF, or as being incorrect when the fabricated circuit does not include the printed SRAF; in response to the predicting being incorrect: adjusting the predictive algorithm, and flagging the fabricated circuit as incorrectly predicted; in response to the predicting being correct, flagging the fabricated circuit as correctly predicted; and storing the image of the fabricated circuit in a repository of training data.

    CREATING KNOWLEDGE BASE FOR OPTICAL PROXIMITY CORRECTION TO REDUCE SUB-RESOLUTION ASSIST FEATURE PRINTING
    3.
    发明申请
    CREATING KNOWLEDGE BASE FOR OPTICAL PROXIMITY CORRECTION TO REDUCE SUB-RESOLUTION ASSIST FEATURE PRINTING 审中-公开

    公开(公告)号：US20180196340A1

    公开(公告)日：2018-07-12

    申请号：US15401299

    申请日：2017-01-09

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Kriteshwar K. Kohli ,  Mark N. Jobes ,  Ioana C. Graur

    IPC: G03F1/36 ,  G06F17/50

    CPC classification number: G03F1/36

    Abstract: Embodiments of the present disclosure include methods, program products, and systems for creating a knowledge base for optical proximity correction (OPC). Methods according to the disclosure can include: fabricating a circuit using a proposed IC layout; identifying a plurality of features in an image of the fabricated circuit; predicting, based on the identifying and a predictive algorithm, whether the fabricated circuit includes a printed sub-resolution assist feature (SRAF) from the proposed IC layout; determining the predicting as being correct when the fabricated circuit includes the printed SRAF, or as being incorrect when the fabricated circuit does not include the printed SRAF; in response to the predicting being incorrect: adjusting the predictive algorithm, and flagging the fabricated circuit as incorrectly predicted; in response to the predicting being correct, flagging the fabricated circuit as correctly predicted; and storing the image of the fabricated circuit in a repository of training data.

    NON-DESTRUCTIVE DIELECTRIC LAYER THICKNESS AND DOPANT MEASURING METHOD
    6.
    发明申请
    NON-DESTRUCTIVE DIELECTRIC LAYER THICKNESS AND DOPANT MEASURING METHOD 有权
    非破坏性电介质层厚度和掺量测量方法

    公开(公告)号：US20160372385A1

    公开(公告)日：2016-12-22

    申请号：US14744198

    申请日：2015-06-19

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Kriteshwar K. Kohli ,  Sean M. Polvino

    IPC: H01L21/66 ,  H01J49/00 ,  H01L29/66 ,  H01J49/44

    CPC classification number: H01L22/12 ,  H01L21/845 ,  H01L22/30 ,  H01L29/66795

    Abstract: A semiconductor device or article includes a substrate including a feature and divided into a feature region in which the feature is formed and a pad region in which the substrate is substantially unmodified, and a layer of interest applied over the substrate and feature. The pad and feature regions are irradiated and resulting photoelectron intensities are recorded and used to determine a thickness of the layer of interest over the feature. In addition, if the layer of interest includes an atomic species distinct from any in the substrate, an actual dose of the atomic species can be determined.

    Abstract translation: 一种半导体器件或制品包括包括特征并分成其中形成特征的特征区域的衬底和其中衬底基本上未改性的焊盘区域，以及施加在衬底和特征上的感兴趣层。 照射垫和特征区域并记录所得到的光电子强度并用于确定该特征上的感兴趣层的厚度。 此外，如果感兴趣的层包括与底物中的任何一个不同的原子种类，则可以确定原子种类的实际剂量。

Patent Agency Ranking