PELLICLE REPLACEMENT IN EUV MASK FLOW
    1.
    发明申请

    公开(公告)号:US20190137863A1

    公开(公告)日:2019-05-09

    申请号:US15805179

    申请日:2017-11-07

    CPC classification number: G03F1/62 G03F1/22 G03F1/64 G03F1/84 G03F7/2004

    Abstract: An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

    Hard mask etch and dielectric etch aware overlap for via and metal layers

    公开(公告)号:US09817927B2

    公开(公告)日:2017-11-14

    申请号:US14841037

    申请日:2015-08-31

    CPC classification number: G06F17/5009 G03F1/36 G06F17/5081

    Abstract: A method and apparatus for generating a final dielectric etch compensation table and a final hard mask etch compensation table for either OPC or MPC process flows are provided. Embodiments include performing an overlap pattern classification on a wafer; calibrating a dielectric etch bias or a hard mask etch bias based on the pattern classification; comparing either a CD overlap of a via layer with a metal layer and a CD overlap of the via layer with a lower connecting metal layer or a CD overlap of the metal layer with an upper connecting via layer and a CD overlap of the metal layer with the via layer against a criteria; outputting final dielectric etch compensation and hard mask etch compensation tables to either OPC or MPC process flows; and repeating the steps of calibrating, comparing, and outputting for either the via layer or metal layer remaining.

    DOUBLE PASS DILUTED ULTRAVIOLET RETICLE INSPECTION

    公开(公告)号:US20200209166A1

    公开(公告)日:2020-07-02

    申请号:US16233336

    申请日:2018-12-27

    Abstract: A reticle inspection system and related method are disclosed. The system includes a concave spherical mirror positioned adjacent a side of the reticle that is configured to reflect inspection light transmitted through the reticle back towards and through the reticle. A sensor is configured to create at least one of: a first inspection image representative of a circuit pattern of the reticle based on transmission of the inspection light through the first side of the reticle and a reflection thereof by the concave spherical mirror through the second side of the reticle, and a second inspection image representative of the circuit pattern of the reticle based on the reflection of the inspection light from the first side of the reticle. A controller is configured to identify a defect in the reticle based on at least one of the first inspection image and the second inspection image.

    Double pass diluted ultraviolet reticle inspection

    公开(公告)号:US10816483B2

    公开(公告)日:2020-10-27

    申请号:US16233336

    申请日:2018-12-27

    Abstract: A reticle inspection system and related method are disclosed. The system includes a concave spherical mirror positioned adjacent a side of the reticle that is configured to reflect inspection light transmitted through the reticle back towards and through the reticle. A sensor is configured to create at least one of: a first inspection image representative of a circuit pattern of the reticle based on transmission of the inspection light through the first side of the reticle and a reflection thereof by the concave spherical mirror through the second side of the reticle, and a second inspection image representative of the circuit pattern of the reticle based on the reflection of the inspection light from the first side of the reticle. A controller is configured to identify a defect in the reticle based on at least one of the first inspection image and the second inspection image.

    Pellicle replacement in EUV mask flow

    公开(公告)号:US10401724B2

    公开(公告)日:2019-09-03

    申请号:US15805179

    申请日:2017-11-07

    Abstract: An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

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