公开(公告)号：US20180006155A1

公开(公告)日：2018-01-04

申请号：US15197892

申请日：2016-06-30

申请人： GLOBALFOUNDRIES Inc.

发明人： Robert Judson HOLT ,  Jinping LIU ,  Jody FRONHEISER ,  Bharat KRISHNAN ,  Churamani GAIRE ,  Timothy James MCARDLE ,  Murat Kerem AKARVARDAR

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/324 ,  H01L21/02 ,  H01L27/088 ,  H01L21/762

CPC分类号： H01L21/02694 ,  H01L21/02236 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/324 ,  H01L21/76224 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7849 ,  H01L29/785

摘要： A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si substrate; forming Si fins on a second portion of the Si substrate; forming STI regions between adjacent SiGe fins and Si fins; forming a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; recessing the STI regions on the first portion of the Si substrate, revealing a bottom portion of the SiGe fins; implanting dopant into the Si substrate below the SiGe fins; and annealing.