公开(公告)号：US20180053757A1

公开(公告)日：2018-02-22

申请号：US15238107

申请日：2016-08-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei YUAN ,  Xuelian ZHU ,  Harry J. LEVINSON

IPC: H01L27/02 ,  H01L27/118 ,  H01L21/308 ,  H01L21/84 ,  H01L27/12 ,  G06F17/50

CPC classification number: H01L27/0207 ,  G06F17/5077 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/11803 ,  H01L27/1211

Abstract: A semiconductor structure includes a substrate having a plurality of semiconductor devices disposed therein. A dielectric layer is disposed over the substrate. A plurality of substantially parallel metal lines are disposed in the dielectric layer. The metal lines include active lines for routing signals to and from the devices, and dummy lines which do not route signals to and from the devices. Signal cuts are disposed in the active lines. The signal cuts define tips of the active lines. Assist cuts are disposed exclusively in the dummy lines and do not define tips of the active lines. The assist cuts are located proximate the signal cuts such that a first density of assist cuts and signal cuts in an area surrounding the signal cuts is substantially greater than a second density of signal cuts alone in the same area.

公开(公告)号：US20180190588A1

公开(公告)日：2018-07-05

申请号：US15399200

申请日：2017-01-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xuelian ZHU ,  Jia ZENG ,  Wenhui WANG ,  Youngtag WOO ,  Jongwook KYE

IPC: H01L23/535 ,  H01L29/417 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L23/535 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/0642 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.