公开(公告)号：US11574758B2

公开(公告)日：2023-02-07

申请号：US17314754

申请日：2021-05-07

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Kazutaka Yamane ,  Eng-Huat Toh ,  Vinayak Bharat Naik ,  Hemant M. Dixit

IPC: G01R33/00 ,  H01F10/32 ,  G01R33/09

Abstract: The present disclosure relates to integrated circuits, and more particularly, to a highly sensitive tunnel magnetoresistance sensor (TMR) with a Wheatstone bridge for field/position detection in integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a first magnetic tunneling junction (MTJ) structure on a first device level; and a second magnetic tunneling junction (MTJ) structure on a different device level than the first MTJ structure. The second MTJ structure includes properties different than the first MTJ structure.

公开(公告)号：US20250063853A1

公开(公告)日：2025-02-20

申请号：US18234469

申请日：2023-08-16

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Francesco Gramuglia ,  Eng-Huat Toh ,  Kiok Boone Elgin Quek

IPC: H01L31/02 ,  H01L21/763 ,  H01L31/107

Abstract: Structures including a single-photon avalanche diode and methods of forming such structures. The structure comprises a semiconductor substrate including a trench. The trench surrounds a portion of the semiconductor substrate. The structure further comprises a deep trench isolation region that includes a dielectric layer and a semiconductor layer inside the trench. The dielectric layer is disposed between a sidewall of the trench and the semiconductor layer. The structure further comprises an active device that includes a doped region in the semiconductor layer.

公开(公告)号：US20240268241A1

公开(公告)日：2024-08-08

申请号：US18105922

申请日：2023-02-06

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Curtis Chun-I Hsieh ,  Kai Kang ,  Wanbing Yi ,  Yongshun Sun ,  Eng-Huat Toh ,  Juan Boon Tan

IPC: H10N70/00 ,  H01L23/528 ,  H10B63/00

CPC classification number: H10N70/841 ,  H01L23/5283 ,  H10B63/34 ,  H10N70/063 ,  H10N70/883

Abstract: Structures that include a layer stack for a resistive memory element and methods of forming a structure that includes a layer stack for a resistive memory element. The structure comprises a resistive memory element including a first electrode, a second electrode, and a switching layer disposed between the second electrode and the first electrode. The first electrode includes a first layer and a second layer between the first layer and the switching layer. The switching layer has a first thickness, and the second layer of the first electrode has a second thickness that is less than the first thickness of the switching layer.

公开(公告)号：US20240389467A1

公开(公告)日：2024-11-21

申请号：US18197147

申请日：2023-05-15

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Eng-Huat Toh ,  Soh Yun Siah ,  Young Seon You ,  Kazutaka Yamane ,  Vinayak Bharat Naik ,  Chan Tze Ho Simon

IPC: H10N50/80 ,  H10N50/01

Abstract: Structures including a magnetic-tunnel-junction device and methods of forming such structures. The structure comprises a magnetic-tunnel-junction device that includes a first electrode having a first sidewall, a second electrode having a second sidewall facing the first sidewall of the first electrode, a pinned layer adjacent to the first sidewall of the first electrode, a free layer adjacent to the second sidewall of the second electrode, and a tunnel barrier layer between the free layer and the pinned layer.

公开(公告)号：US11791083B2

公开(公告)日：2023-10-17

申请号：US17330934

申请日：2021-05-26

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Eng-Huat Toh ,  Hemant M. Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane

IPC: H01F10/32 ,  G01R33/09 ,  H01F41/32

CPC classification number: H01F10/3272 ,  G01R33/098 ,  H01F10/3254 ,  H01F41/32

Abstract: The present disclosure relates to integrated circuits, and more particularly, a tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures and methods of manufacture and operation. The structure includes: a first magnetic tunneling junction (MTJ) structure on a first level; a second MTJ structure on a same wiring level as the first MTJ structure; and at least one metal line between the first MTJ structure and the second MTJ structure.

公开(公告)号：US11585703B2

公开(公告)日：2023-02-21

申请号：US16700358

申请日：2019-12-02

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Bin Liu ,  Eng-Huat Toh ,  Shyue Seng Tan ,  Kiok Boone Elgin Quek

IPC: G01K7/01 ,  G11C11/406 ,  G11C11/4072 ,  G11C7/04

Abstract: Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.