Wordline system architecture supporting erase operation and I-V characterization

    公开(公告)号:US12176053B2

    公开(公告)日:2024-12-24

    申请号:US17380688

    申请日:2021-07-20

    Abstract: The present disclosure relates to integrated circuits, and more particularly, to a wordline system architecture supporting an erase operation and current-voltage (I-V) characterization and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a twin cell circuit which is connected to a wordline of a memory array; a sourceline driver which is connected to a sourceline of the memory array for providing a cell level current-voltage (I-V) access of the twin cell circuit; and an integrated analog multiplexor which is connected to the twin cell circuit.

    Twin cell memory-based physically unclonable function

    公开(公告)号:US11329836B1

    公开(公告)日:2022-05-10

    申请号:US17199515

    申请日:2021-03-12

    Abstract: A Physically Unclonable Function (PUF) structure includes an array of twin cells divided into two portions: one with first columns and one with second columns. Cells in each first column are connected to a corresponding pair of first bitlines. Cells in each second column are connected to a corresponding pair of second bitlines. A first column decoder is connected to the first bitlines and to a first input of sense amplifier (SA) and a second column decoder is connected to the second bitlines and to a second input of SA. Each read operation to generate a bit is directed to a first cell in a first column and a second cell in a second column and, during the read operation, signals on only one first bitline of the first column containing the first cell and only one second bitline of the second column containing the second cell are compared.

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