公开(公告)号：US20240006491A1

公开(公告)日：2024-01-04

申请号：US17852966

申请日：2022-06-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Qizhi LIU ,  Yves T. NGU ,  Ajay RAMAN ,  Rajendran KRISHNASAMY ,  Alvin J. JOSEPH

IPC: H01L29/10 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.

公开(公告)号：US20220406833A1

公开(公告)日：2022-12-22

申请号：US17896401

申请日：2022-08-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Siva P. ADUSUMILLI ,  Vibhor JAIN ,  Alvin J. JOSEPH ,  Steven M. SHANK

IPC: H01L27/146

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.

公开(公告)号：US20210313373A1

公开(公告)日：2021-10-07

申请号：US16842080

申请日：2020-04-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  Vibhor JAIN ,  Alvin J. JOSEPH ,  Steven M. SHANK

IPC: H01L27/146

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.

公开(公告)号：US20250040221A1

公开(公告)日：2025-01-30

申请号：US18226982

申请日：2023-07-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Johnatan A. KANTAROVSKY ,  Mark D. LEVY ,  Alvin J. JOSEPH ,  Santosh SHARMA ,  Michael J. ZIERAK

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a gate structure; a first field plate on a first side of the gate structure; and a second field plate on a second side of the gate structure, independent from the first field plate.

公开(公告)号：US20230187449A1

公开(公告)日：2023-06-15

申请号：US18104504

申请日：2023-02-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/66 ,  H01L21/8234

CPC classification number: H01L27/1207 ,  H01L21/76283 ,  H01L23/66 ,  H01L21/823481 ,  H01L2223/6605

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.

公开(公告)号：US20220352210A1

公开(公告)日：2022-11-03

申请号：US17306078

申请日：2021-05-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Alvin J. JOSEPH ,  Ramsey HAZBUN

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/8234 ,  H01L23/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.