Inter-pixel thermal isolation for hybrid thermal detectors
    1.
    发明授权
    Inter-pixel thermal isolation for hybrid thermal detectors 失效
    用于混合热探测器的像素间隔热隔离

    公开(公告)号:US5424544A

    公开(公告)日:1995-06-13

    申请号:US235835

    申请日:1994-04-29

    IPC分类号: G01J5/34 H01L37/02 H04N5/33

    CPC分类号: G01J5/34 H01L37/02

    摘要: A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.

    摘要翻译: 热检测系统(100,200)包括焦平面阵列(102,202),热隔离结构(104,204)和集成电路基板(106,206)。 焦平面阵列(102,202)包括由热电元件(116,216)形成的热传感器(114,214),例如钛酸锶钡(BST)。 热电元件(116,216)的一侧通过热隔离结构(104,210)的台面导体(112,212)耦合到设置在集成电路基板(106,206)上的接触焊盘(110,210) ,204)。 热电元件(116,216)的另一侧耦合到公共电极(120,220)。 在一个实施例中,槽(128)形成在热传感器(114)中间的公共电极(120)中,以改进像素间热隔离。 在另一个实施例中,槽(236)形成在光学涂层(224)中以改进像素间热隔离。 公共电极(120,220)可以由诸如一氧化硅和铬基体(金属陶瓷)或其它金属氧化物的绝热材料形成。

    Thermal isolation of hybrid thermal detectors through an anisotropic etch
    4.
    发明授权
    Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
    通过各向异性蚀刻对混合热探测器进行热隔离

    公开(公告)号:US5572059A

    公开(公告)日:1996-11-05

    申请号:US477718

    申请日:1995-06-07

    CPC分类号: H01L37/02 H01L27/1465

    摘要: A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104). An anistropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.

    摘要翻译: 热隔离结构(10)设置在焦平面阵列和集成电路基板(12)之间。 热隔离结构(10)包括从台面型结构(16)的顶部延伸到集成的台面型结构(16)的相关接触垫(14)的台面型结构(16)和台面状导体(18,26) 电路基板(12)。 在形成台面型结构(16)和台面状导体(18,26)之后,使用台面导体(18,26)作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成 (24),用于改善热隔离。 凸起接合材料(20)可以沉积在台面状导体(18,26)上,并且也可以在各向异性蚀刻期间用作蚀刻掩模。 热隔离结构(100)可以包括台面型结构(102),每个都具有垂直延伸到集成电路衬底(106)的相关接触焊盘(104)的中心定位的通孔(110)。 导体(108)沿着通孔(110)的壁和覆盖接触焊盘(104)沉积在台面型结构(102)的顶部上。 使用导体(108)作为蚀刻掩模的无捻蚀刻去除多余的台面材料(118)以改善热隔离。

    Thermal isolation of hybrid thermal detectors through an anisotropic etch
    5.
    发明授权
    Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
    通过各向异性蚀刻对混合热探测器进行热隔离

    公开(公告)号:US5478242A

    公开(公告)日:1995-12-26

    申请号:US236778

    申请日:1994-04-29

    CPC分类号: H01L37/02 H01L27/1465

    摘要: A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.

    摘要翻译: 热隔离结构(10)设置在焦平面阵列和集成电路基板(12)之间。 热隔离结构(10)包括从台面型结构(16)的顶部延伸到集成的台面型结构(16)的相关接触垫(14)的台面型结构(16)和台面状导体(18,26) 电路基板(12)。 在形成台面型结构(16)和台面状导体(18,26)之后,使用台面导体(18,26)作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成 (24),用于改善热隔离。 凸起接合材料(20)可以沉积在台面状导体(18,26)上,并且也可以在各向异性蚀刻期间用作蚀刻掩模。 热隔离结构(100)可以包括台面型结构(102),每个都具有垂直延伸到集成电路衬底(106)的相关接触焊盘(104)的中心定位的通孔(110)。 导体(108)沿着通孔(110)的壁和覆盖接触垫(104)沉积在台面型结构(102)的顶部上。 使用导体(108)作为蚀刻掩模的各向异性蚀刻去除多余的台面材料(118)以改善热隔离。

    Infrared detector thermal isolation structure and method
    7.
    发明授权
    Infrared detector thermal isolation structure and method 失效
    红外探测器热隔离结构及方法

    公开(公告)号:US5426304A

    公开(公告)日:1995-06-20

    申请号:US182865

    申请日:1994-01-13

    CPC分类号: H01L37/02

    摘要: In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a corresponding focal plane array (30, 130, and 230) of thermal sensors (40, 140, and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flowpath (V.sub.s) for the respective thermal sensor (40 and 240). The mesa conductors (56, 58, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242 and 243) having a void space (277 and 279) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30, 130 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).

    摘要翻译: 在示例性热成像系统(20,120,220和320)中,热隔离结构(50和150)设置在集成电路衬底(70和170)上,用于电连接和机械地结合相应的焦平面阵列(30 ,130和230)热传感器(40,140和240)。 每个台面型结构(52,54和152)包括从台面型结构(52,54和152)的顶部延伸到相邻接触垫的至少一个台面导体(56,58,156和158) (72和74)。 台面导体(56,58,156和158)为相应的热传感器(40和240)提供偏压(VB)和相应的热传感器(40和240)的信号流路(Vs)。 台面导体(56,58,156和158)可用于向具有空隙空间(277和279)或一对铁电元件(42)的单个铁电元件(242和243)提供偏置电压(VB) 和44)。 当焦平面阵列(30,130和230)被结合到相应的台面型结构(52,54和152)阵列时,热隔离但是导电的路径被提供在电极(43和45)之间 热传感器(40和240)以及集成电路基板(70和74)的相应接触焊盘(72和172)。

    Infrared detector local biasing structure and method
    8.
    发明授权
    Infrared detector local biasing structure and method 失效
    红外探测器局部偏置结构及方法

    公开(公告)号:US5436450A

    公开(公告)日:1995-07-25

    申请号:US182268

    申请日:1994-01-13

    CPC分类号: H01L37/02

    摘要: In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a focal plane array (30 and 230) of thermal sensors (40 and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flow path (V.sub.S) for the respective thermal sensor (40 and 240). The mesa conductors (56, 56, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).

    摘要翻译: 在示例性热成像系统(20,120,220和320)中,热隔离结构(50和150)设置在集成电路基板(70和170)上,用于电连接和机械地结合焦平面阵列(30和 230)的热传感器(40和240)。 每个台面型结构(52,54和152)包括从台面型结构(52,54和152)的顶部延伸到相邻接触垫的至少一个台面导体(56,58,156和158) (72和74)。 台面导体(56,58,156和158)为相应的热传感器(40和240)提供偏压(VB)和相应的热传感器(40和240)的信号流路(VS)。 台面导体(56,56,156和158)可用于向单个铁电元件(242)或一对铁电元件(42和44)提供偏置电压(VB)。 当焦平面阵列(30和230)被结合到对应的台面型结构(52,54和152)阵列时,在热传感器的电极(43和45)之间提供热隔离但是导电的路径 (40和240)以及集成电路基板(70和74)的对应的接触垫(72和172)。

    Thermal isolation of monolithic thermal detector
    9.
    发明授权
    Thermal isolation of monolithic thermal detector 失效
    单片热探测器的隔热

    公开(公告)号:US6087661A

    公开(公告)日:2000-07-11

    申请号:US959943

    申请日:1997-10-29

    IPC分类号: G01J5/10 G01J5/20 G01J5/22

    CPC分类号: G01J5/10 G01J5/20

    摘要: A thermal sensor (36, 84, 114) comprising a thermal assembly (44, 88, 118) and a signal flowpath (46, 90, 120). The thermal assembly (44, 88, 118) may comprise a thermally sensitive element (50) and a pair of electrodes (52, 54). The thermally sensitive element (50) may generate a signal representative of an amount of thermal radiation incident to the thermally sensitive element (50). The electrodes (52, 54) may collect the signal generated by the thermally sensitive element (50). The signal flowpath (46, 90, 120) may transmit the signal collected by the electrodes (52, 54) to the substrate (34, 82, 112). The signal flowpath (46, 90, 120) may comprise a pair of arms (56, 58, 92, 122) each extending from an electrode (52, 54) and be connected to the substrate (34, 82, 112). The arms (56, 58, 92, 122) may support the thermal assembly (44, 88, 118) in spaced relation with the substrate (34, 82, 112). The arms (56, 58, 92, 122) may be formed of a thermally insulating material.

    摘要翻译: 包括热组件(44,88,118)和信号流路(46,90,120)的热传感器(36,84,114)。 热组件(44,88,118)可以包括热敏元件(50)和一对电极(52,54)。 热敏元件(50)可以产生表示入射到热敏元件(50)的热辐射量的信号。 电极(52,54)可以收集由热敏元件(50)产生的信号。 信号流路(46,90,120)可以将由电极(52,54)收集的信号传送到基板(34,82,112)。 信号流路(46,90,120)可以包括一对臂(56,58,92,122),每对臂从电极(52,54)延伸并连接到衬底(34,82,112)。 臂(56,58,92,122)可以以与衬底(34,82,112)间隔开的关系支撑热组件(44,48,118)。 臂(56,58,92,122)可以由隔热材料形成。

    Thermal detector and method
    10.
    发明授权
    Thermal detector and method 失效
    热探测器和方法

    公开(公告)号:US5708269A

    公开(公告)日:1998-01-13

    申请号:US693770

    申请日:1996-08-07

    摘要: A thermal imaging system (10) for providing an image representative of an amount of thermal radiation incident to the system is provided. The system (10) includes a thermal detector (28 or 30) made from a layer of temperature sensitive material forming a first element of a signal-producing circuit (54). The first element (28 or 30) has either a resistance or capacitance value depending on its temperature. The system (10) also includes an integrated circuit substrate (32) having a second element (56 or 58) of the signal-producing circuit (54) complementary and electrically coupled to the first element (28 or 30). The signal-producing circuit (54) may produce an output signal having a amplitude. The amplitude of the output signal is monitored as representing an absolute temperature of the detector (28 or 30) so as to determine the amount of thermal energy incident to the system (10).

    摘要翻译: 提供一种用于提供表示入射到系统的热辐射量的图像的热成像系统(10)。 系统(10)包括由形成信号产生电路(54)的第一元件的感温材料层制成的热检测器(28或30)。 第一个元件(28或30)的电阻或电容值取决于其温度。 系统(10)还包括集成电路基板(32),其具有互补且电耦合到第一元件(28或30)的信号产生电路(54)的第二元件(56或58)。 信号产生电路(54)可以产生具有振幅的输出信号。 监测输出信号的振幅,表示检测器(28或30)的绝对温度,以便确定入射到系统(10)的热能的量。