Pixel structure for microbolometer detector
    1.
    发明申请
    Pixel structure for microbolometer detector 有权
    微光度计检测器的像素结构

    公开(公告)号:US20110266444A1

    公开(公告)日:2011-11-03

    申请号:US12799627

    申请日:2010-04-28

    申请人: Charles M. Hanson

    发明人: Charles M. Hanson

    摘要: Microbolometer pixel structures including membrane material in a current path between at least two spaced electrodes, the membrane material having multiple openings defined in the current path that are configured such that substantially the entire volume of electrically conductive membrane material in at least a portion of the current path contributes to conduction of current between the electrical contacts.

    摘要翻译: 微电子照度计像素结构,包括在至少两个间隔开的电极之间的电流通路中的膜材料,所述膜材料具有限定在电流路径中的多个开口,其被配置为使得在电流的至少一部分中基本上整个体积的导电膜材料 路径有助于电触点之间的电流传导。

    Infrared detector with amorphous silicon detector elements, and a method of making it
    2.
    发明授权
    Infrared detector with amorphous silicon detector elements, and a method of making it 有权
    具有非晶硅检测元件的红外探测器及其制作方法

    公开(公告)号:US06777681B1

    公开(公告)日:2004-08-17

    申请号:US09844171

    申请日:2001-04-25

    IPC分类号: G01J502

    CPC分类号: G01J5/20 H01L27/14669

    摘要: An infrared detector (10) includes a substrate (16) having thereon an array of detector elements (21, 139). Each detector element has a membrane (41, 81, 91, 111, 141), which includes an amorphous silicon layer (51, 142) in contact with at least two electrodes (53, 56-57, 92, 112-113, 143-145) that are made of a titanium/aluminum alloy which absorbs infrared radiation. In order to obtain a desired temperature coefficient of resistance (TCR), the amorphous silicon layer may optionally be doped. The effective resistance between the electrodes is set to a desired value by appropriate configuration of the electrodes and the amorphous silicon layer. The membrane includes two outer layers (61-62, 146-147) made of an insulating material. Openings (149) may optionally be provided through the membrane.

    摘要翻译: 红外检测器(10)包括其上具有检测器元件(21,139)阵列的基板(16)。 每个检测器元件具有膜(41,81,91,111,141),其包括与至少两个电极(53,56-57,92,112-113,143)接触的非晶硅层(51,142) -145),其由吸收红外辐射的钛/铝合金制成。 为了获得期望的电阻温度系数(TCR),非晶硅层可以任选地被掺杂。 通过电极和非晶硅层的适当配置将电极之间的有效电阻设定为期望值。 膜包括由绝缘材料制成的两个外层(61-62,146-147)。 可以可选地通过膜提供开口(149)。

    Method of preferentially-ordering a thermally sensitive element
    3.
    发明授权
    Method of preferentially-ordering a thermally sensitive element 失效
    优先排序热敏元件的方法

    公开(公告)号:US5972108A

    公开(公告)日:1999-10-26

    申请号:US910687

    申请日:1997-08-13

    IPC分类号: H01L37/02 C30B9/00

    CPC分类号: H01L37/02

    摘要: Method of preferentially-ordering a thermally sensitive element (50) may comprise the step of forming a first thin film layer of electrically conductive material (75). A thin film layer of thermally sensitive material (80) may be formed on a surface of the first layer of electrically conductive material (75). A second thin film layer of electrically conductive material (85) of lanthanum strontium cobalt oxide (LSCO) may be formed on a surface of the layer of thermally sensitive material (80) opposite the first thin film layer (75). A nucleation layer (87) may be formed in communication with the surface of the layer of thermally sensitive material (80) opposite the first thin film layer (75). The layer of thermally sensitive material (80) may be crystallized beginning at the surface of the thermally sensitive layer (80) in communication with nucleation layer (87). The nucleation layer (87) may be removed.

    摘要翻译: 优先排序热敏元件(50)的方法可以包括形成导电材料(75)的第一薄膜层的步骤。 可以在第一层导电材料(75)的表面上形成热敏材料(80)的薄膜层。 氧化镧钴氧化物(LSCO)的导电材料(85)的第二薄膜层可以形成在与第一薄膜层(75)相对的热敏材料层(80)的表面上。 可以形成与第一薄膜层(75)相对的热敏材料层(80)的表面连通的成核层(87)。 热敏材料层(80)可以在与成核层(87)连通的热敏层(80)的表面开始结晶。 成核层(87)可以被去除。

    Thermal detector with nucleation element and method
    4.
    发明授权
    Thermal detector with nucleation element and method 失效
    具有成核元素和方法的热探测器

    公开(公告)号:US5945673A

    公开(公告)日:1999-08-31

    申请号:US919654

    申请日:1997-08-28

    IPC分类号: G01J5/34 G01K7/00

    CPC分类号: G01J5/34

    摘要: Thermal sensor (36) mounted to a substrate (34). The thermal sensor may include a first thin film electrode (52), a nucleation element (55), a thermally sensitive element (50) and a second thin film electrode (54). The first thin film electrode (52) may be disposed adjacent to the nucleation element(52). The thermally sensitive element (50) may be in electrical communication with the first thin film electrode (52). The thermally sensitive element (50) may comprise a plurality of preferentially-ordered crystals. The second thin film electrode (54) may be in electrical communication with the thermally sensitive element (50) opposite the nucleation element (55).

    摘要翻译: 安装到基板(34)上的热传感器(36)。 热传感器可以包括第一薄膜电极(52),成核元件(55),热敏元件(50)和第二薄膜电极(54)。 第一薄膜电极(52)可以邻近成核元件(52)设置。 热敏元件(50)可以与第一薄膜电极(52)电连通。 热敏元件(50)可以包括多个优先有序的晶体。 第二薄膜电极(54)可以与与成核元件(55)相对的热敏元件(50)电连通。

    Monolithic thermal detector with pyroelectric film and method
    5.
    发明授权
    Monolithic thermal detector with pyroelectric film and method 失效
    具有热电膜的单片热探测器及方法

    公开(公告)号:US5602043A

    公开(公告)日:1997-02-11

    申请号:US368067

    申请日:1995-01-03

    摘要: One or more thin film layers of material may be formed on an integrated circuit substrate and anisotropically etched to produce a monolithic thermal detector. A first layer of material may be placed on the integrated circuit substrate and anisotropically etched to form a plurality of supporting structures for the thermal sensors of the associated focal plane array. The thermal sensors of the focal plane array may be provided by anisotropically etching one or more thin film layers of material formed on the supporting structures. In an exemplary thermal detector, one of the thin film layers preferably includes pyroelectric material such as barium strontium titanate. A layer of thermal insulating material may be disposed between the integrated circuit substrate and the pyroelectric film layer to allow annealing of the pyroelectric film layer without causing damage to the associated integrated circuit substrate. In addition to the layer of insulating material, a heat sink may be disposed on the integrated circuit substrate opposite from the pyroelectric film layer to protect the integrated circuit substrate while annealing the pyroelectric film layer. Alternatively, a thermal isolation structure may be formed between the pyroelectric film layer and its associated supporting structures to allow annealing of the pyroelectric film layer without substantial heating of the underlying circuit substrate.

    摘要翻译: 可以在集成电路基板上形成一个或多个材料薄膜层,并进行各向异性蚀刻以产生单片式热检测器。 可以将第一层材料放置在集成电路基板上并进行各向异性蚀刻,以形成用于相关焦平面阵列的热传感器的多个支撑结构。 焦平面阵列的热传感器可以通过各向异性蚀刻形成在支撑结构上的一个或多个材料薄膜层来提供。 在示例性的热检测器中,薄膜层之一优选地包括热电材料,例如钛酸锶钡。 可以在集成电路基板和热电膜层之间设置一层绝热材料,以允许热电膜层的退火而不会损坏相关联的集成电路基板。 除了绝缘材料层之外,还可以在与热电膜层相对的集成电路基板上设置散热器,以在热电膜层退火的同时保护集成电路基板。 或者,可以在热电膜层及其相关联的支撑结构之间形成热隔离结构,以允许热电膜层的退火,而不会对下面的电路基板进行实质加热。

    Infrared detector local biasing structure and method
    6.
    发明授权
    Infrared detector local biasing structure and method 失效
    红外探测器局部偏置结构及方法

    公开(公告)号:US5436450A

    公开(公告)日:1995-07-25

    申请号:US182268

    申请日:1994-01-13

    CPC分类号: H01L37/02

    摘要: In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a focal plane array (30 and 230) of thermal sensors (40 and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flow path (V.sub.S) for the respective thermal sensor (40 and 240). The mesa conductors (56, 56, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).

    摘要翻译: 在示例性热成像系统(20,120,220和320)中,热隔离结构(50和150)设置在集成电路基板(70和170)上,用于电连接和机械地结合焦平面阵列(30和 230)的热传感器(40和240)。 每个台面型结构(52,54和152)包括从台面型结构(52,54和152)的顶部延伸到相邻接触垫的至少一个台面导体(56,58,156和158) (72和74)。 台面导体(56,58,156和158)为相应的热传感器(40和240)提供偏压(VB)和相应的热传感器(40和240)的信号流路(VS)。 台面导体(56,56,156和158)可用于向单个铁电元件(242)或一对铁电元件(42和44)提供偏置电压(VB)。 当焦平面阵列(30和230)被结合到对应的台面型结构(52,54和152)阵列时,在热传感器的电极(43和45)之间提供热隔离但是导电的路径 (40和240)以及集成电路基板(70和74)的对应的接触垫(72和172)。

    Inter-pixel thermal isolation for hybrid thermal detectors
    7.
    发明授权
    Inter-pixel thermal isolation for hybrid thermal detectors 失效
    用于混合热探测器的像素间隔热隔离

    公开(公告)号:US5424544A

    公开(公告)日:1995-06-13

    申请号:US235835

    申请日:1994-04-29

    IPC分类号: G01J5/34 H01L37/02 H04N5/33

    CPC分类号: G01J5/34 H01L37/02

    摘要: A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.

    摘要翻译: 热检测系统(100,200)包括焦平面阵列(102,202),热隔离结构(104,204)和集成电路基板(106,206)。 焦平面阵列(102,202)包括由热电元件(116,216)形成的热传感器(114,214),例如钛酸锶钡(BST)。 热电元件(116,216)的一侧通过热隔离结构(104,210)的台面导体(112,212)耦合到设置在集成电路基板(106,206)上的接触焊盘(110,210) ,204)。 热电元件(116,216)的另一侧耦合到公共电极(120,220)。 在一个实施例中,槽(128)形成在热传感器(114)中间的公共电极(120)中,以改进像素间热隔离。 在另一个实施例中,槽(236)形成在光学涂层(224)中以改进像素间热隔离。 公共电极(120,220)可以由诸如一氧化硅和铬基体(金属陶瓷)或其它金属氧化物的绝热材料形成。

    Two-stage split-cycle cooler with pneumatic piston
    9.
    发明授权
    Two-stage split-cycle cooler with pneumatic piston 失效
    带气动活塞的两级分段式循环冷却器

    公开(公告)号:US4090858A

    公开(公告)日:1978-05-23

    申请号:US773032

    申请日:1977-02-28

    申请人: Charles M. Hanson

    发明人: Charles M. Hanson

    IPC分类号: F25B9/14 F25B9/00

    CPC分类号: F25B9/14

    摘要: A Stirling-cycle refrigerator including a compressor portion having two cnders with respective pistons therein, and an expansion portion with a cylinder having first and second distinct spaces, and with opposite ends of an expansion piston in the distinct spaces. The two cylinders of the compressor portion are connected by respective refrigerant conduits to the two spaces of the expansion portion. The end of the expansion piston in the first space has a regenerator therein. The two pistons of the compressor are driven 180.degree. out of phase, whereby the respective conduits simultaneously induce compression in the first expansion portion space and expansion in the second. The conduit between the second space and the respective compressor cylinder additionally includes a regenerator.

    摘要翻译: 一种斯特林循环式冷冻机,其特征在于,具有压缩机部,所述压缩机部分具有两个具有各自的活塞的气缸,以及具有第一和第二不同空间的气缸的膨胀部分,以及在不同空间中的膨胀活塞的相对端。 压缩机部分的两个气缸通过相应的制冷剂导管连接到膨胀部分的两个空间。 第一空间中的膨胀活塞的端部在其中具有再生器。 压缩机的两个活塞相位驱动180度,从而相应的导管同时在第一膨胀部空间中引起压缩并在第二膨胀部空间中膨胀。 第二空间和相应的压缩机气缸之间的导管还包括再生器。

    In-cell current subtraction for infrared detectors
    10.
    发明授权
    In-cell current subtraction for infrared detectors 有权
    红外探测器的单元电流减法

    公开(公告)号:US08183513B2

    公开(公告)日:2012-05-22

    申请号:US12459122

    申请日:2009-06-26

    IPC分类号: H01J40/14 G01J5/00

    CPC分类号: G01W1/08

    摘要: Read-out cell systems are disclosed for image detectors, including infrared image detectors, that provide improved sensitivity by providing in-cell subtraction through the use of a voltage ramp signal generated using a reference pixel and a feedback amplifier. The ramp voltage is generated using a reference pixel and an amplifier having feedback. The ramp voltage is then provided to a plurality of read-out cells. The ramp voltage can be coupled to an input transistor to provide current subtraction prior to the integration node. The ramp voltage can also be provided to integration capacitors within the read-out cells to provide current subtraction directly to the integration node. Further, a temperature-independent fixed current source can also be utilized to further control current subtraction.

    摘要翻译: 公开了用于包括红外图像检测器的图像检测器的读出单元系统,其通过使用使用参考像素和反馈放大器产生的电压斜坡信号来提供单元内减法来提供改善的灵敏度。 使用参考像素和具有反馈的放大器产生斜坡电压。 然后将斜坡电压提供给多个读出单元。 斜坡电压可以耦合到输入晶体管,以在集成节点之前提供电流减法。 斜坡电压也可以提供给读出单元内的积分电容器,以便直接向集成节点提供减法。 此外,还可以利用温度独立的固定电流源来进一步控制电流减法。