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公开(公告)号：US5746930A
公开(公告)日：1998-05-05
申请号：US368068
申请日：1995-01-03
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
摘要翻译： 热敏元件阵列（16）可以由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。 第一层导电触头（60）被形成以限定衬底（46）的一部分屏蔽（61）和未屏蔽（68）区域。 可以在第一层触点（60）上形成第二层导电触点（62）。 形成掩模层（66）以封装第二层触点（62）的暴露部分。 未掩蔽区域（68）暴露于蚀刻剂（70）并被照射以显着增加未掩模区域（68）和蚀刻剂（70）之间的反应性，使得在照射期间，蚀刻剂（70）去除未掩蔽区域（68） ）比第一层触点（60）和掩模层（66）快得多。
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公开(公告)号：US5737818A
公开(公告)日：1998-04-14
申请号：US711224
申请日：1996-08-30
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/928 , Y10T29/435 , Y10T29/49155
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the vias 23 forming biasing contact areas around a periphery of the substrate 20; depositing a first trench filler 24 in the trenches 22 and vias 23; replanarizing; depositing a common electrode layer 25 over the thermal isolation trenches and the biasing contact areas; mechanically thinning the substrate 20 to expose the biasing contact area 32 and the trench filler 24; depositing a contact metal 34 on the backside of the substrate 20, the exposed trench filler 24 and the exposed bias contact area; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. The thermal isolation trenches 22 and the bias contact vias 23 may be formed by ion milling or laser vaporization. Alternately, the bias contact areas 23 may be formed by performing laser vaporization on the substrate 20 to produce conductive 23 areas within the substrate.
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3.发明授权Retractable probe system with in situ fabrication environment process parameter sensing 失效具有原位制造环境过程参数检测的伸缩式探头系统
公开(公告)号：US5716878A
公开(公告)日：1998-02-10
申请号：US787559
申请日：1997-01-22
CPC分类号： G01N27/60
摘要： A retractable probe system (12) senses in situ a plurality of predetermined process parameters of a wafer (24) fabrication environment (16) and includes a sensing device (47) for sensing the predetermined process parameters, a probe arm (46) for holding sensing device (47) and having sufficient length to extend sensing device (47) into a predetermined location of the fabrication environment (16). A housing (36) receives the sensing device (47) and probe arm (46). A locator mechanism (52, 42, and 44) controllably locates sensing device 47) and probe arm (46) within fabrication environment (16) and within housing (36). An isolator mechanism (34) isolates sensing device (47) and probe arm (46) within housing (36) and essentially out of gases communication with fabrication environment (16). Cleaning mechanism (54) cleanses sensing device (47) within housing (36) and permits sensing device (47) to be immediately thereafter located in fabrication environment (16).
摘要翻译： 可伸缩探针系统（12）原位感测晶片（24）制造环境（16）的多个预定工艺参数，并且包括用于感测预定工艺参数的感测装置（47），用于保持 感测装置（47）并且具有足够的长度以将感测装置（47）延伸到制造环境（16）的预定位置。 壳体（36）接收感测装置（47）和探测臂（46）。 定位器机构（52,42和44）可控地定位传感装置47）和探针臂（46）在制造环境（16）内和壳体（36）内。 隔离器机构（34）将感测装置（47）和探针臂（46）隔离在壳体（36）内，并且基本上不与制造环境（16）连通。 清洁机构（54）清洁壳体（36）内的感测装置（47），并且允许感测装置（47）立即定位在制造环境（16）中。
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公开(公告)号：US5696002A
公开(公告)日：1997-12-09
申请号：US635047
申请日：1996-04-19
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022408 , H01L31/02161 , Y10S148/08 , Y10S148/135 , Y10S438/977
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
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公开(公告)号：US5631467A
公开(公告)日：1997-05-20
申请号：US664047
申请日：1996-06-13
申请人： James F. Belcher , Robert A. Owen
发明人： James F. Belcher , Robert A. Owen
摘要： A novel reticulated array comprises islands of ceramic (e.g. BST 40) which are fabricated from novel materials using unique methods of patterning. A front side optical coating (e.g. transparent metal layer 44, transparent organic layer 46 and conductive metallic layer 48) is elevated above the substrate between the ceramic islands. This allows additional material (e.g. polyimide 38) between the optical coating and the substrate above the regions where cavities are to be etched. Etching of the cavities (72) is performed from the back side of the substrate without damaging the front side optical coating. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 80) containing a massive array of sensing circuits.
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公开(公告)号：US5603848A
公开(公告)日：1997-02-18
申请号：US367641
申请日：1995-01-03
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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公开(公告)号：US5466332A
公开(公告)日：1995-11-14
申请号：US223087
申请日：1994-04-04
申请人： Robert A. Owen , James F. Belcher
发明人： Robert A. Owen , James F. Belcher
CPC分类号： C04B41/009 , C04B41/5338 , C04B41/91 , H01L37/02 , C04B2111/00844
摘要： A novel method etching through a substrate (e.g. BST 22) comprises removi A n5 Vthick substrate material from the backside of the substrate to form vias (e.g. cavity 24) all the way to the back surface of a frontside thin film (e.g. optical coating 20). To prevent damage to the frontside thin film while etching from the backside of the supporting substrate, the periphery of each frontside pixel is surrounded by a trench (e.g. etch stop trench 30) much deeper than the thickness of the thin film but also significantly shallower than the thickness of the substrate. This trench is then filled with an etch stop material (e.g. photoresist 32). This etch stop may be partially removed by the backside etching method but provides a tolerant means of recognizing when to stop etching before frontside film damage occurs. After etching the substrate down to and partially through the etch stop, the assembly is removed from the substrate etching medium. The remaining etch stop material may be removed with a specific agent which does not damage the frontside film. For example, if the etch stop is an organic material, such as photoresist, it may be removed from the back with a suitable solvent or dry etch without damaging either the substrate or the frontside thin film.
摘要翻译： 通过衬底（例如BST 22）蚀刻的新颖方法包括从衬底的背面去除衬底材料，以形成一直到前侧薄膜（例如光学涂层20）的通孔（例如空腔24） ）。 为了防止在从支撑衬底的背面进行蚀刻时对前侧薄膜的损伤，每个前沿像素的周边被比薄膜厚度更深的沟槽（例如蚀刻停止沟槽30）包围，但也明显比 基板的厚度。 然后用蚀刻停止材料（例如光致抗蚀剂32）填充该沟槽。 该蚀刻停止部可以通过背面蚀刻方法部分去除，但是提供了一种容忍装置，用于识别何时停止在前侧膜损伤发生之前的蚀刻。 在将衬底刻蚀并部分地通过蚀刻停止件之后，将组件从衬底蚀刻介质上移除。 剩余的蚀刻停止材料可以用不破坏前侧膜的特定试剂去除。 例如，如果蚀刻停止层是诸如光致抗蚀剂的有机材料，则其可以用合适的溶剂或干蚀刻从背面去除，而不会损坏衬底或前侧薄膜。
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公开(公告)号：US5351876A
公开(公告)日：1994-10-04
申请号：US177037
申请日：1994-01-04
申请人： James F. Belcher , Gary W. Andrews
发明人： James F. Belcher , Gary W. Andrews
IPC分类号： H01L21/603 , H01L21/00 , H01L21/60 , H01L21/68
CPC分类号： H01L21/67121 , H01L21/68 , H01L24/75 , H01L24/81 , H01L2224/75734 , H01L2224/8121 , H01L2224/8123 , H01L2224/81801 , H01L2924/01013 , H01L2924/01033 , H01L2924/01042 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A bonding apparatus (40) having one or more electromagnets (60) is provided for use in coupling a first substrate (20) with flip chip type interconnections (24) to a second substrate (22) having matching flip chip type interconnections (26). The bonding apparatus (40) includes a pedestal assembly (50) which may be used to align and couple the first substrate (20) with the second substrate (22). The bonding apparatus (40) includes an electrical control system (108) with a control unit (130) for varying the amount of electrical power supplied to the electromagnet (60). One or more heater assemblies (110) are provided for temperature cycling of the substrates (20 and 22) during the bonding process. Magnetic force is used to maintain the alignment of the first substrate (20) with the second substrate (22) during temperature cycling.
摘要翻译： 提供具有一个或多个电磁体（60）的接合装置（40），用于将第一衬底（20）与倒装芯片型互连（24）耦合到具有匹配倒装芯片型互连（26）的第二衬底（22） 。 接合装置（40）包括可用于将第一基板（20）与第二基板（22）对准和联接的基座组件（50）。 接合装置（40）包括具有用于改变供应给电磁体（60）的电力量的控制单元（130）的电气控制系统（108）。 提供一个或多个加热器组件（110），用于在接合过程期间衬底（20和22）的温度循环。 磁力用于在温度循环期间保持第一衬底（20）与第二衬底（22）的对准。
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公开(公告)号：US5959298A
公开(公告)日：1999-09-28
申请号：US665135
申请日：1996-06-14
申请人： James F. Belcher , Robert A. Owen
发明人： James F. Belcher , Robert A. Owen
IPC分类号： H01L27/146 , H01L37/02 , G01J5/54
CPC分类号： H01L37/02 , H01L27/1465
摘要： A novel reticulated array comprises islands of ceramic (e.g. BST 40) which are fabricated from novel materials using unique methods of patterning. A shallow etch stop trench (46) is first ion milled around each ceramic island on front side and then filled with an etch stop material (e.g. parylene 48). An optical coat (e.g transparent metal layer 54, transparent organic layer 56 and conductive metallic layer 58) is elevated above the etch stop material by an elevation layer (e.g. polyimide 49). For some applications, it has been experimentally verified that there is no loss, and sometimes a measured increase, in optical efficiency when the optical coating is not planar in topology. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 86) containing a massive array of sensing circuits.
摘要翻译： 新颖的网状阵列包括使用独特的图案化方法由新型材料制成的陶瓷岛（例如BST 40）。 首先在前侧的每个陶瓷岛周围离子研磨浅蚀刻停止沟槽（46），然后用蚀刻停止材料（例如聚对二甲苯48）填充。 光学涂层（例如透明金属层54，透明有机层56和导电金属层58）通过仰角层（例如聚酰亚胺49）在蚀刻停止材料上方升高。 对于一些应用，已经通过实验证实，当光学涂层在拓扑结构中不是平面的时，光学效率没有损失，有时是测量的增加。 新颖的制造方法还提供了将大量陶瓷岛中的每一个的便利的电和机械结合到包含大量感测电路阵列的信号处理器基板（例如Si 86）。
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公开(公告)号：US5654580A
公开(公告)日：1997-08-05
申请号：US464981
申请日：1995-06-05
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , H01L31/058
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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