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1.发明授权Methods for forming niobium and/or vanadium containing layers using atomic layer deposition 失效使用原子层沉积法形成含铌和/或钒的层的方法公开(公告)号：US07482037B2
公开(公告)日：2009-01-27
申请号：US10923315
申请日：2004-08-20
IPC分类号： C23C16/40
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02175 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L28/90
摘要： A method of forming a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
摘要翻译： 一种使用一种或多种包括铌和/或钒的前体化合物并使用原子层沉积工艺在基底上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成含金属层的方法 包括多个沉积循环。
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2.发明授权Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition 失效使用原子层沉积形成铌和/或含钒层的系统和方法公开(公告)号：US07837797B2
公开(公告)日：2010-11-23
申请号：US12352223
申请日：2009-01-12
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02175 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L28/90
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
摘要翻译： 使用一种或多种包括铌和/或钒的前体化合物在基板上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法 以及使用包括多个沉积循环的原子层沉积工艺。
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3.发明申请SYSTEMS AND METHODS FOR FORMING NIOBIUM AND/OR VANADIUM CONTAINING LAYERS USING ATOMIC LAYER DEPOSITION 失效使用原子沉积法形成含有铌和/或钒的层的系统和方法公开(公告)号：US20090127105A1
公开(公告)日：2009-05-21
申请号：US12352223
申请日：2009-01-12
IPC分类号： C23C14/34
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02175 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L28/90
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
摘要翻译： 使用一种或多种包括铌和/或钒的前体化合物在基板上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法 以及使用包括多个沉积循环的原子层沉积工艺。
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公开(公告)号：US08216377B2
公开(公告)日：2012-07-10
申请号：US13041227
申请日：2011-03-04
IPC分类号： C23C16/06 , C23C16/08 , H01L21/3205 , H01L21/44 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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公开(公告)号：US07922818B2
公开(公告)日：2011-04-12
申请号：US11218773
申请日：2005-09-01
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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公开(公告)号：US20120276750A1
公开(公告)日：2012-11-01
申请号：US13541435
申请日：2012-07-03
IPC分类号： H01L21/31 , C22C14/00 , C01B35/04 , C01B21/076 , C01B33/06
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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公开(公告)号：US08435886B2
公开(公告)日：2013-05-07
申请号：US13541435
申请日：2012-07-03
IPC分类号： C23C16/06 , C23C16/08 , H01L21/3205 , H01L21/44 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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公开(公告)号：US20110147935A1
公开(公告)日：2011-06-23
申请号：US13041227
申请日：2011-03-04
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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9.发明授权Method for binding halide-based contaminants during formation of a titanium-based film 有权在形成钛基膜期间结合卤化物基污染物的方法公开(公告)号：US07311942B2
公开(公告)日：2007-12-25
申请号：US10230592
申请日：2002-08-29
CPC分类号： H01L29/06 , B01J20/3483 , B01J38/02 , C23C16/08 , C23C16/34 , C23C16/4404 , C23C16/4412 , H01L21/324 , H01L23/58 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。
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10.发明授权公开(公告)号：US06783657B2
公开(公告)日：2004-08-31
申请号：US10231434
申请日：2002-08-29
IPC分类号： B23H1100
摘要： The present invention provides methods and systems for the electrolytic removal of platinum and/or other of the Group 8-11 metals from substrates.
摘要翻译： 本发明提供了用于从基底电解去除铂和/或其它第8-11族金属的方法和系统。
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