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    Ruthenium and ruthenium dioxide removal method and material
    4.
    发明授权
    Ruthenium and ruthenium dioxide removal method and material 失效
    钌和二氧化钌去除方法和材料

    公开(公告)号：US06827871B2

    公开(公告)日：2004-12-07

    申请号：US10322960

    申请日：2002-12-18

    Applicant: Donald L. Westmoreland

    Inventor： Donald L. Westmoreland

    IPC: C23F110

    CPC classification number: C23C16/4407 ,  C22B11/046 ,  C23F1/30 ,  H01L21/32134 ,  Y02P10/214

    Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

    Abstract translation: 一种用于去除包括钌金属和/或二氧化钌在内的诸如层，膜或沉积物的结构的至少一部分的方法包括使结构与包括硝酸铈铵的材料接触。 用于除去钌金属和无定形二氧化钌的材料包括硝酸铈铵，并且可以是包括硝酸铈铵和任选的提供所需性质的其它固体或液体溶质的水溶液的形式。 在一个应用中，可以利用该方法和材料在制造半导体系统及其元件，组件和器件（例如导线，电触头）中蚀刻，形成或图案钌金属和/或二氧化钌的层或膜 ，字线，位线，互连，通孔，电极，电容器，晶体管，二极管和存储器件。

    Film on a surface of a mold used during semiconductor device fabrication
    6.
    发明授权
    Film on a surface of a mold used during semiconductor device fabrication 有权

    公开(公告)号：US06607173B2

    公开(公告)日：2003-08-19

    申请号：US10210633

    申请日：2002-07-31

    Applicant: Donald L. Westmoreland

    Inventor： Donald L. Westmoreland

    IPC: B29C3356

    CPC classification number: G03F7/0002 ,  B29C33/56 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/565 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A film is provided on a mold used during semiconductor device fabrication through surface modifications to the mold to provide non-stick characteristics and a mold surface that is resistant to abrasion or wear. Such surface modifications are particularly useful in a mold having a quartz planar surface adapted to contact a photocurable polymer material applied to a semiconductor wafer surface during a fabrication process. The planar surface of the mold is capable of allowing transmission of ultraviolet light therethrough to cure the polymer material. A non-stick film is formed on the planar surface of the mold by a coating or deposition process in order to modify the mold surface. The non-stick film can be formed of a fluoroalkylsilane compound, or a hard material such as diamond or diamond-like carbon. The non-stick film of diamond or diamond-like carbon provides protection against abrasion or wear on the planar surface of the mold. In addition, the non-stick film of diamond or diamond-like carbon can be fluorine-terminated, or can have a coating layer of a fluoroalkylsilane compound formed thereover.

    Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor
    7.
    发明授权
    Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor 失效
    抑制材料沉积在化学气相沉积反应器的内壁上的方法

    公开(公告)号：US5824365A

    公开(公告)日：1998-10-20

    申请号：US668855

    申请日：1996-06-24

    Applicant: Gurtej S. Sandhu ,  Ravi Iyer ,  Donald L. Westmoreland

    Inventor： Gurtej S. Sandhu ,  Ravi Iyer ,  Donald L. Westmoreland

    IPC: C23C16/44 ,  B05D7/22 ,  C23C16/00

    CPC classification number: C23C16/4404

    Abstract: A method of inhibiting deposition of material on a wall of a chemical vapor deposition reactor includes providing a chemical vapor deposition reactor having a wall which has an inside facing surface, the inside facing surface at least partially defining a chemical vapor deposition reactor chamber; forming a first material atop the inside facing surface; positioning a substrate in the chemical vapor deposition reactor chamber, the substrate having an outer surface; and chemical vapor depositing a second material layer on the substrate in a manner which is selective to the substrate outer surface, and not the first material, thereby restricting deposition of the second layer on the reactor inside facing surface.

    Abstract translation: 一种抑制材料沉积在化学气相沉积反应器的壁上的方法包括提供具有壁的化学气相沉积反应器，所述壁具有面向内的表面，所述内表面至少部分地限定化学气相沉积反应室; 在面向内表面的顶部形成第一材料; 将衬底定位在化学气相沉积反应器室中，所述衬底具有外表面; 以及以对衬底外表面有选择性的方式在衬底上沉积第二材料层，而不是第一材料，由此限制第二层在反应器面对表面上的沉积。

    Method and appartus for subliming precursors
    8.
    发明授权
    Method and appartus for subliming precursors 失效
    升华前体的方法和附件

    公开(公告)号：US5377429A

    公开(公告)日：1995-01-03

    申请号：US49565

    申请日：1993-04-19

    Applicant: Gurtej S. Sandhu ,  Scott G. Meikle ,  Donald L. Westmoreland

    Inventor： Gurtej S. Sandhu ,  Scott G. Meikle ,  Donald L. Westmoreland

    IPC: B01D7/00 ,  C23C16/448 ,  F26B13/30

    CPC classification number: C23C16/4481 ,  B01D7/00

    Abstract: An improved method and apparatus are provided for subliming solid precursors, and especially organometallic precursors, for use in a chemical vapor deposition (CVD) process. The sublimation apparatus includes a sealed vessel having a vacuum chamber. A quantity of the solid precursor is mixed with a loosely packed particulate material, such as ceramic beads, placed within the vacuum chamber. The vacuum chamber and particulate material are heated. A supply of a carrier gas is directed through the particulate material (particularly through pockets formed in the particulate material) to sublime the precursor which coats the individual particles of particulate material. By agitating the particulate material, a relatively constant sublimation area is maintained. Agitation of the particulate material may be with a mechanical stirrer or by directing an a.c. field through a piezoelectric particulate material.

    Abstract translation: 提供改进的方法和装置，用于升华用于化学气相沉积（CVD）工艺中的固体前体，特别是有机金属前体。 升华装置包括具有真空室的密封容器。 将一定量的固体前体与放置在真空室内的松散填充的颗粒材料（例如陶瓷珠）混合。 真空室和颗粒材料被加热。 载体气体的供应通过颗粒材料（特别是通过形成在颗粒材料中的凹穴）引导，以使涂覆颗粒材料的各个颗粒的前体升华。 通过搅拌颗粒材料，维持相对恒定的升华区域。 颗粒材料的搅拌可以用机械搅拌器或通过引导a.c. 通过压电颗粒材料。

    Plasmaless dry contact cleaning method using interhalogen compounds
    9.
    发明授权
    Plasmaless dry contact cleaning method using interhalogen compounds 失效
    使用间卤化合物的无等离子体干接触清洗方法

    公开(公告)号：US07371263B2

    公开(公告)日：2008-05-13

    申请号：US11387660

    申请日：2006-03-23

    Applicant: Gurtej S. Sandhu ,  Donald L. Westmoreland

    Inventor： Gurtej S. Sandhu ,  Donald L. Westmoreland

    IPC: H01L21/302

    CPC classification number: H01L21/02063 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/76814 ,  Y10S438/906

    Abstract: A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide layer. The interhalogen compound may form volatile by-product gases upon reaction with the oxide layer. Unreacted interhalogen compound and volatile by-product gases may then be removed from the reaction chamber.

    Abstract translation: 从制品中去除氧化物层的方法。 该制品可以位于反应室中，与该氧化物层反应的卤间化合物被引入该反应室中。 可以改变反应室的温度以除去氧化物层。 当与氧化物层反应时，卤间化合物可以形成挥发性副产物气体。 然后可以从反应室中除去未反应的卤间化合物和挥发性副产物气体。

    Method of planarizing a surface
    10.
    发明授权
    Method of planarizing a surface 失效
    平面化表面的方法

    公开(公告)号：US07264742B2

    公开(公告)日：2007-09-04

    申请号：US10919912

    申请日：2004-08-17

    Applicant: Donald L. Westmoreland

    Inventor： Donald L. Westmoreland

    IPC: C23F1/10

    CPC classification number: C23C16/4407 ,  C22B11/046 ,  C23F1/30 ,  H01L21/32134 ,  Y02P10/214

    Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

    Abstract translation: 一种用于去除包括钌金属和/或二氧化钌在内的诸如层，膜或沉积物的结构的至少一部分的方法包括使结构与包括硝酸铈铵的材料接触。 用于除去钌金属和无定形二氧化钌的材料包括硝酸铈铵，并且可以是包括硝酸铈铵和任选地提供所需性质的其它固体或液体溶质的水溶液形式。 在一个应用中，可以利用该方法和材料在制造半导体系统及其元件，组件和器件（例如导线，电触头）中蚀刻，形成或图案钌金属和/或二氧化钌的层或膜 ，字线，位线，互连，通孔，电极，电容器，晶体管，二极管和存储器件。

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