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366 条记录 (耗时 0.023 秒)

    Semiconductor substrate
    7.
    发明授权
    Semiconductor substrate 有权
    半导体衬底

    公开(公告)号：US07411254B2

    公开(公告)日：2008-08-12

    申请号：US11241488

    申请日：2005-09-29

    申请人： Garo J. Derderian ,  Cem Basceri

    发明人： Garo J. Derderian ,  Cem Basceri

    IPC分类号： H01L29/76

    CPC分类号： C23C16/0227 ,  C23C16/0254 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

    摘要： The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a crystalline form TiN, WN, elemental form W, or SiC comprising layer is deposited onto the exposed elemental silicon containing surface to a thickness no greater than 50 Angstroms. Such layer is exposed to plasma and a conductive reaction layer including at least one of an elemental metal or metal rich silicide is deposited onto the plasma exposed layer. At least one of metal of the conductive reaction layer or elemental silicon of the substrate is diffused along columnar grain boundaries of the crystalline form layer effective to cause a reaction of metal of the conductive reaction layer with elemental silicon of the substrate to form a conductive metal silicide comprising contact region electrically connecting the conductive reaction layer with the substrate. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括通过金属与硅的反应形成导电金属硅化物的方法。 在一个实施方案中，这种方法包括提供包括暴露的含元素硅的表面的半导体衬底。 将结晶形态TiN，WN，元素形式W或包含SiC的层中的至少一种沉积到暴露的含元素硅表面上至不大于50埃的厚度。 这种层暴露于等离子体，并且包含元素金属或富金属硅化物中的至少一种的导电反应层沉积到等离子体暴露层上。 基板的导电性反应层或元素硅的金属中的至少一种沿结晶层的柱状晶界扩散，有效地引起导电性反应层的金属与基板的元素硅的反应，形成导电性金属 硅化物，其包括将导电反应层与基底电连接的接触区域。 考虑了其他方面和实现。

    Atomic layer deposition methods
    8.
    发明授权
    Atomic layer deposition methods 失效
    原子层沉积法

    公开(公告)号：US07150789B2

    公开(公告)日：2006-12-19

    申请号：US10208314

    申请日：2002-07-29

    申请人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： C30B23/00

    CPC分类号： C30B25/14 ,  C23C14/0641 ,  C23C14/081 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45531

    摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

    摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 在形成第一单层之后，反应性中间气体流到沉积室内的衬底。 反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。 在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

    Methods of forming trenched isolation regions
    9.
    发明授权
    Methods of forming trenched isolation regions 有权
    形成沟槽隔离区的方法

    公开(公告)号：US06835664B1

    公开(公告)日：2004-12-28

    申请号：US10609279

    申请日：2003-06-26

    申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

    发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

    IPC分类号： H01L21311

    CPC分类号： C23C18/1283 ,  C23C18/1208 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/125 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/28556 ,  H01L21/31 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/318

    摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.

    摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包括在超临界流体内的所需材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。

    Methods of forming regions of differing composition over a substrate
    10.
    发明授权
    Methods of forming regions of differing composition over a substrate 失效
    在基底上形成不同组成的区域的方法

    公开(公告)号：US06780766B2

    公开(公告)日：2004-08-24

    申请号：US10443354

    申请日：2003-05-21

    申请人： Cem Basceri ,  Garo J. Derderian

    发明人： Cem Basceri ,  Garo J. Derderian

    IPC分类号： H01L2144

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/28061 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659 ,  Y10S977/859

    摘要： The invention includes methods of forming regions of differing composition over a substrate. A first material having a pattern of at least one substantially amorphous region and at least one substantially crystalline region is provided over the substrate. The at least one substantially amorphous region of the first material replaced with a second material, while the at least one substantially crystaline region is not replaced. The invention also includes a circuit construction comprising an electrically conductive material extending within openings in a substantially crystalline electrically insulative material, and in which the electrically conductive material corresponds to quantum dots.

    摘要翻译： 本发明包括在衬底上形成不同组成的区域的方法。 具有至少一个基本非晶区域和至少一个基本上结晶区域的图案的第一材料设置在该基板上。 所述第一材料的至少一个基本非晶区域被第二材料代替，而所述至少一个基本上晶体区域不被替换。 本发明还包括电路结构，其包括在基本上结晶的电绝缘材料的开口内延伸的导电材料，并且其中导电材料对应于量子点。