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    Structure for confining the switching current in phase memory (PCM) cells
    1.
    发明授权
    Structure for confining the switching current in phase memory (PCM) cells 失效
    将开关电流限制在相位存储器（PCM）单元中的结构

    公开(公告)号：US07488967B2

    公开(公告)日：2009-02-10

    申请号：US11100312

    申请日：2005-04-06

    申请人： Geoffrey W. Burr ,  Chung Hon Lam ,  Simone Raoux ,  Stephen M. Rossnagel ,  Alejandro G. Schrott ,  Jonathan Z. Sun ,  Hemantha K. Wickramasinghe

    发明人： Geoffrey W. Burr ,  Chung Hon Lam ,  Simone Raoux ,  Stephen M. Rossnagel ,  Alejandro G. Schrott ,  Jonathan Z. Sun ,  Hemantha K. Wickramasinghe

    IPC分类号： H01L29/02

    CPC分类号： H01L45/1683 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144

    摘要： Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a narrow channel of phase change material to a top contact. The channel is tapered from the top contact towards the main body. A minimum width of the channel has a less than minimum lithographic dimension and is narrower than a width of the main body. Therefore, the channel provides a confined region for the switching current path and restricts phase changing to within the channel. In addition an embodiment of the memory cell isolates the main body of phase change material by providing a space between the phase change material and the cell walls. The space allows the phase change material to expand and contract and also limits heat dissipation.

    摘要翻译： 公开了相变存储单元和形成存储单元的方法。 存储单元包括相变材料的主体，其直接连接到底部触点，并经由相位改变材料的窄通道连接到顶部触点。 通道从顶部触点向主体逐渐变细。 通道的最小宽度具有小于最小光刻尺寸，并且窄于主体的宽度。 因此，该通道为开关电流路径提供一个限制区域，并将相位变化限制在通道内。 此外，存储器单元的实施例通过在相变材料和单元壁之间提供空间来隔离相变材料的主体。 该空间允许相变材料膨胀和收缩，并且还限制了散热。

    Current constricting phase change memory element structure
    8.
    发明授权
    Current constricting phase change memory element structure 有权
    电流限制相变存储元件结构

    公开(公告)号：US07932507B2

    公开(公告)日：2011-04-26

    申请号：US12727672

    申请日：2010-03-19

    申请人： Chieh-Fang Chen ,  Shih Hung Chen ,  Yi-Chou Chen ,  Thomas Happ ,  Chia Hua Ho ,  Ming-Hsiang Hsueh ,  Chung Hon Lam ,  Hsiang-Lan Lung ,  Jan Boris Philipp ,  Simone Raoux

    发明人： Chieh-Fang Chen ,  Shih Hung Chen ,  Yi-Chou Chen ,  Thomas Happ ,  Chia Hua Ho ,  Ming-Hsiang Hsueh ,  Chung Hon Lam ,  Hsiang-Lan Lung ,  Jan Boris Philipp ,  Simone Raoux

    IPC分类号： H01L29/02

    CPC分类号： B82Y10/00 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

    摘要： A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.

    摘要翻译： 使用具有大约10nm的尺寸的纳米颗粒层形成电流收缩层或作为用于从下面的绝​​缘体层形成电流收缩层的硬掩模。 纳米颗粒优选在下面的表面上自对准和/或自平坦化。 电流收缩层可以形成在底部导电板内，在相变材料层内，在顶部导电板内，或在锥形衬垫之间的锥形衬里之间，锥形通孔侧壁和通孔插塞包含相变材料或顶部导电 材料。 电流收缩层周围的局部结构的电流密度高于周围区域，从而允许局部温度比周围材料高。 由于电流收缩层，减少编程相变存储器件所需的总电流以及编程晶体管的尺寸。