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    Forming adherent coatings using plasma processing
    2.
    发明授权
    Forming adherent coatings using plasma processing 失效
    使用等离子体处理形成粘附涂层

    公开(公告)号：US06572933B1

    公开(公告)日：2003-06-03

    申请号：US09160227

    申请日：1998-09-24

    申请人： Michael A. Nastasi ,  Kevin C. Walter ,  Donald J. Rej

    发明人： Michael A. Nastasi ,  Kevin C. Walter ,  Donald J. Rej

    IPC分类号： H05H124

    CPC分类号： C23C16/56 ,  C23C8/36 ,  C23C16/0245 ,  C23C16/029 ,  C23C16/32 ,  H01J37/32412

    摘要： Process for forming adherent coatings using plasma processing. Plasma Immersion Ion Processing (PIIP) is a process where energetic (hundreds of eV to many tens of keV) metallic and metalloid ions derived from high-vapor-pressure organometallic compounds in a plasma environment are employed to deposit coatings on suitable substrates, which coatings are subsequently relieved of stress using inert ion bombardment, also in a plasma environment, producing thereby strongly adherent coatings having chosen composition, thickness and density. Four processes are utilized: sputter-cleaning, ion implantation, material deposition, and coating stress relief. Targets are placed directly in a plasma and pulse biased to generate a non-line-of-sight deposition without the need for complex fixturing. If the bias is a relatively high negative potential (20 kV-100 kV) ion implantation will result. At lower voltages (50 V-10 kV), deposition occurs, and the extent of the surface modification can routinely be extended between 1 &mgr;m and 10 &mgr;m. By combining plasma based implantation and film deposition, coatings with greatly reduced stress are possible, allowing the ultimate coating thickness to be expanded to tens of microns.

    摘要翻译： 使用等离子体处理形成粘附涂层的方法。 等离子体浸入离子处理（PIIP）是一种在等离子体环境中由高蒸气压的有机金属化合物衍生的能量（几百eV至几十keV）的金属和准金属离子用于将涂层沉积在合适的基材上的工艺， 随后在等离子体环境中使用惰性离子轰击释放应力，由此产生具有所选组成，厚度和密度的强粘附性涂层。 利用四个工艺：溅射清洗，离子注入，材料沉积和涂层应力消除。 目标直接放置在等离子体中，脉冲偏置以产生非视距沉积，而不需要复杂的夹持。 如果偏置是相对较高的负电位（20 kV-100 kV），则会产生离子注入。 在较低的电压（50V-10kV）下，发生沉积，并且表面改性的程度可以常规地在1m和10um之间延伸。 通过组合基于等离子体的植入和膜沉积，可以大大降低应力的涂层，使最终的涂层厚度扩展到几十微米。

    Optically transparent, scratch-resistant, diamond-like carbon coatings
    3.
    发明授权
    Optically transparent, scratch-resistant, diamond-like carbon coatings 失效
    光学透明，耐刮擦，类金刚石碳涂层

    公开(公告)号：US06572935B1

    公开(公告)日：2003-06-03

    申请号：US09428269

    申请日：1999-10-27

    申请人： Xiao-Ming He ,  Deok-Hyung Lee ,  Michael A. Nastasi ,  Kevin C. Walter ,  Michel G. Tuszewski

    发明人： Xiao-Ming He ,  Deok-Hyung Lee ,  Michael A. Nastasi ,  Kevin C. Walter ,  Michel G. Tuszewski

    IPC分类号： C23C1627

    CPC分类号： C23C16/26 ,  H01J37/32412 ,  Y10S427/103 ,  Y10S427/104

    摘要： A plasma-based method for the deposition of diamond-like carbon (DLC) coatings is described. The process uses a radio-frequency inductively coupled discharge to generate a plasma at relatively low gas pressures. The deposition process is environmentally friendly and scaleable to large areas, and components that have geometrically complicated surfaces can be processed. The method has been used to deposit adherent 100-400 nm thick DLC coatings on metals, glass, and polymers. These coatings are between three and four times harder than steel and are therefore scratch resistant, and transparent to visible light. Boron and silicon doping of the DLC coatings have produced coatings having improved optical properties and lower coating stress levels, but with slightly lower hardness.

    摘要翻译： 描述了用于沉积类金刚石（DLC）涂层的基于等离子体的方法。 该过程使用射频感应耦合放电在相对低的气体压力下产生等离子体。 沉积工艺对于大面积的环境友好和可扩展，并且可以处理具有几何复杂表面的部件。 该方法已用于在金属，玻璃和聚合物上沉积100-400nm厚的DLC涂层。 这些涂层比钢硬三至四倍，因此具有耐划伤性，对可见光透明。 DLC涂层的硼和硅掺杂已经产生具有改善的光学性能和较低涂层应力水平但具有稍低的硬度的涂层。

    Method of transferring strained semiconductor structure
    5.
    发明授权
    Method of transferring strained semiconductor structure 失效
    传输应变半导体结构的方法

    公开(公告)号：US07638410B2

    公开(公告)日：2009-12-29

    申请号：US11641471

    申请日：2006-12-18

    申请人： Michael A. Nastasi ,  Lin Shao

    发明人： Michael A. Nastasi ,  Lin Shao

    IPC分类号： H01L21/46

    CPC分类号： H01L21/76251 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2924/30105

    摘要： The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

    摘要翻译： 应变半导体层从一个衬底到另一个衬底的转移涉及在具有表面污染物的衬底上沉积多层结构。 在沉积层和基板之间形成包含污染物的界面。 氢原子被引入到结构中并允许扩散到界面。 之后，将沉积的多层结构结合到第二衬底并在界面处分离，这导致将多层结构从一个衬底转移到另一个衬底。 多层结构包括至少一个应变半导体层和至少一个应变诱导种子层。 在层转移之后，应变诱导的种子层可以任选地蚀刻掉。

    Method of transferring a thin crystalline semiconductor layer
    7.
    发明授权
    Method of transferring a thin crystalline semiconductor layer 有权
    转移薄晶体半导体层的方法

    公开(公告)号：US07153761B1

    公开(公告)日：2006-12-26

    申请号：US11243010

    申请日：2005-10-03

    申请人： Michael A. Nastasi ,  Lin Shao ,  N. David Theodore

    发明人： Michael A. Nastasi ,  Lin Shao ,  N. David Theodore

    IPC分类号： H01L21/322

    CPC分类号： H01L21/76254

    摘要： A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

    摘要翻译： 将薄半导体层从一个衬底转移到另一个衬底的方法包括在具有表面污染物的衬底上沉积薄的外延单晶半导体层。 在沉积层和基板之间形成包含污染物的界面。 氢原子被引入到结构中并允许扩散到界面。 之后，薄的半导体层被结合到第二衬底上，并且薄层在界面处被分开，这导致将薄的外延半导体层从一个衬底转移到另一个衬底。

    Processing of hydroxylapatite coatings on titanium alloy bone prostheses
    9.
    发明授权
    Processing of hydroxylapatite coatings on titanium alloy bone prostheses 失效
    钛合金骨假体羟基磷灰石涂层的加工

    公开(公告)号：US5817326A

    公开(公告)日：1998-10-06

    申请号：US566339

    申请日：1995-12-01

    申请人： Michael A. Nastasi ,  Timothy E. Levine ,  James W. Mayer ,  Vincent B. Pizziconi

    发明人： Michael A. Nastasi ,  Timothy E. Levine ,  James W. Mayer ,  Vincent B. Pizziconi

    IPC分类号： A61F2/00 ,  A61F2/30 ,  A61L27/32 ,  C23C14/48 ,  A61F2/28

    CPC分类号： A61L27/32 ,  A61F2/30767 ,  C23C14/48 ,  A61F2/3094 ,  A61F2310/00023 ,  A61F2310/00796

    摘要： Processing of hydroxylapatite sol-gel films on titanium alloy bone prostheses. A method utilizing non-line-of-sight ion beam implantation and/or rapid thermal processing to provide improved bonding of layers of hydroxylapatite to titanium alloy substrates while encouraging bone ingrowth into the hydroxylapatite layers located away from the substrate, is described for the fabrication of prostheses. The first layer of hydroxylapatite is mixed into the substrate by the ions or rapidly thermally annealed, while subsequent layers are heat treated or densified using ion implantation to form layers of decreasing density and larger crystallization, with the outermost layers being suitable for bone ingrowth.

    摘要翻译： 在钛合金骨假体上加工羟基磷灰石溶胶 - 凝胶膜。 描述了一种使用非视距离离子束注入和/或快速热处理来提供羟基磷灰石层与钛合金基底的改进结合，同时鼓励骨向内生长到位于远离基底的羟基磷灰石层中的方法，用于制造 的假肢。 羟基磷灰石的第一层通过离子混合到衬底中或快速热退火，而随后的层通过离子注入进行热处理或致密化，以形成密度降低和结晶较大的层，最外层适用于骨向内生长。