Power transistor monolithic integrated structure
    3.
    发明授权
    Power transistor monolithic integrated structure 失效
    功率晶体管单片集成结构

    公开(公告)号:US4942308A

    公开(公告)日:1990-07-17

    申请号:US301821

    申请日:1989-01-25

    IPC分类号: H01L23/525

    CPC分类号: H01L23/5256 H01L2924/0002

    摘要: A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.

    摘要翻译: 通过双极外延技术制造的功率晶体管单片集成结构包括多个并联的晶体管单元结构,每个晶体管结构包含至少一个元件晶体管。 每个元件晶体管的基极通过保护电阻和熔丝链耦合到公共基极控制导体,熔丝链在晶体管单元的缺陷的情况下熔化。 另一个熔丝链路被结合在从相应元件晶体管的集电极引导到安装在晶体管芯片的表面上的公共导体网的分支导体中。 在制造过程中,所有的晶体管单元结构彼此电隔离。

    Precision reference voltage source
    4.
    发明授权
    Precision reference voltage source 失效
    精密参考电压源

    公开(公告)号:US5258702A

    公开(公告)日:1993-11-02

    申请号:US768283

    申请日:1991-10-01

    IPC分类号: G05F3/30 G05F3/22

    CPC分类号: G05F3/30

    摘要: A monolithically integrated precision reference voltage source by the bandgap principle, suitable for a wide temperature range, is proposed, in which the parabolic course of the temperature response curve of the reference voltage is linearized by process means available in the monolithic integration, dispensing with additional active components such as transistors or diodes. The precision voltage reference source includes two resistors (21, 22), which are represented by the N-doped emitter diffusion zone.

    摘要翻译: PCT No.PCT / DE90 / 00212 Sec。 371日期1991年10月1日 102(e)日期1991年10月1日PCT 1990年3月21日PCT公布。 WO90 / 12351 PCT出版物 日期为1990年10月18日。提出了适用于宽温度范围的通过带隙原理的单片集成精密参考电压源,其中参考电压的温度响应曲线的抛物线路线通过可用于 单片集成,分配额外的有源器件,如晶体管或二极管。 精密电压参考源包括由N掺杂发射极扩散区表示的两个电阻器(21,22)。

    Current regulator
    5.
    发明授权
    Current regulator 失效
    现行监管机构

    公开(公告)号:US5173655A

    公开(公告)日:1992-12-22

    申请号:US679056

    申请日:1991-05-01

    IPC分类号: G05F1/56 G05F1/46 H03F3/34

    CPC分类号: G05F1/462

    摘要: A current regulator, preferably constructed in accordance with monolithic integrated technology, for high currents is proposed, whose output current (I) is a function of an input quantity (E). In this case the output current (I) is less in a range of the input quantity (E) different from a value of zero than the value given in this range by the functional relationship between the input quantity (E) and the output current (I).

    摘要翻译: PCT No.PCT / DE89 / 00670 Sec。 371日期1991年5月1日 102(e)日期1991年5月1日PCT提交1989年10月21日PCT公布。 第WO90 / 05330号公报 日期为1990年5月17日。提出了一种电流调节器,优选根据单片集成技术构建用于高电流的电流调节器,其输出电流(I)是输入量(E)的函数。 在这种情况下,在输入量(E)与输入量(E)与输出电流(E)之间的函数关系不同于该范围内的值的输入量(E)的范围内,输出电流(I) 一世)。

    Electronic circuit device
    6.
    发明授权
    Electronic circuit device 失效
    电子电路设备

    公开(公告)号:US5068703A

    公开(公告)日:1991-11-26

    申请号:US477881

    申请日:1990-04-12

    IPC分类号: H01L29/73 H03K17/12

    CPC分类号: H03K17/12 H01L29/7304

    摘要: An electronic circuit device having a monolithic integrated power transistor is disclosed that comprises a parallel connection of a plurality of individual partial transistors (1, 2, 3, . . . , n). In order to stabilize the distribution of the sum current to the individual partial transistors (1, 2, 3, . . . , n) resistors (41, 42, 43, . . . 4n) are provided in their emitter lines. At least one of the resistors (41, 42, 43, . . . 4n) in the emitter lines of the partial transistors (1, 2, 3, . . . , n) serves as measurement resistor for producing a signal voltage proportional to the current to provide an electronic circuit device having current regulation or current limiting, as shown in FIG. 2.

    摘要翻译: PCT No.PCT / DE88 / 00034 Sec。 371日期1990年04月12日 102(e)日期1990年4月12日PCT 1989年1月21日PCT PCT。 公开号WO89 / 07341 公开了具有单片集成功率晶体管的电子电路装置,其包括多个单独部分晶体管(1,2,3,...,n)的并联连接。 为了稳定电流到各个部分晶体管(1,2,3,...,n)的电流分布,在它们的发射极线上设置有电阻(41,42,43 ...,4n)。 部分晶体管(1,2,3,...,n)的发射极线中的至少一个电阻器(41,42,43,... 4n)用作测量电阻器,用于产生与 提供具有电流调节或电流限制的电子电路装置的电流,如图1所示。 2。

    Monolithic integrated semiconductor means to reduce power dissipation of
a parasitic transistor
    8.
    发明授权
    Monolithic integrated semiconductor means to reduce power dissipation of a parasitic transistor 失效
    单片集成半导体意味着减少寄生晶体管的功耗

    公开(公告)号:US4829360A

    公开(公告)日:1989-05-09

    申请号:US50295

    申请日:1987-05-05

    CPC分类号: H01L27/0772

    摘要: A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate. Its anode forms the emitter and its cathode forms the base of a parasitic substrate transistor (4). In order to reduce the power loss caused by means of this parasitic substrate transistor (4), means (8) for increasing the collector path resistance (41) of the parasitic transistor (4) are provided.

    摘要翻译: PCT No.PCT / DE86 / 00331 Sec。 371日期:1987年5月5日 102(e)日期1987年5月5日PCT提交1986年8月22日PCT公布。 公开号WO87 / 01868 日期:1987年3月26日。半导体装置整体地集成在衬底上并且包括至少一个功率二极管(3),其阴极处于比衬底的电位(5)更高的电势(6)。 其阳极形成发射极,其阴极形成寄生衬底晶体管(4)的基极。 为了减少由寄生晶体管(4)引起的功率损耗,提供了用于增加寄生晶体管(4)的集电极路径电阻(41)的装置(8)。

    Process and apparatus for texturizing filament bundles
    9.
    发明授权
    Process and apparatus for texturizing filament bundles 失效
    丝束组织化的工艺和装置

    公开(公告)号:US4295253A

    公开(公告)日:1981-10-20

    申请号:US79327

    申请日:1979-09-27

    IPC分类号: D02G1/04 D02G1/16 D02G1/12

    CPC分类号: D02G1/04 D02G1/161

    摘要: A process for texturizing bundles of filaments of synthetic high molecular weight materials at high speed, wherein the filament bundle is passed through a feed nozzle and is then brought into contact with a hot gaseous medium which is undergoing a vortical motion and has acquired a vortex angle of from 10.degree. to 70.degree. as a result of passage through a vortex chamber, is then heated by the fluid medium in a downstream tubular chamber and is subsequently fed to an expansion stage to produce the crimp, and apparatus for carrying out this process.

    摘要翻译: 一种用于高速合成高分子量材料的细丝束的方法,其中细丝束通过进料喷嘴,然后与经历涡旋运动的热气体介质接触并获得涡流角 由于通过涡流室的结果为10°至70°,然后通过下游管状室中的流体介质加热,随后被送入膨胀级以产生卷曲,以及用于执行该方法的装置。

    Voltage-regulator for generator
    10.
    发明授权
    Voltage-regulator for generator 失效
    发电机用电压调节器

    公开(公告)号:US5144219A

    公开(公告)日:1992-09-01

    申请号:US602291

    申请日:1990-11-16

    IPC分类号: H02J7/24

    CPC分类号: H02J7/245 Y02T10/92

    摘要: A voltage regulator (4) for a generator (1), particularly for use in motor vehicles, is provided which produces an average field current in the exciting winding (2) of the generator (1) by switching on and off the field current by a controlled semiconductor switch in cooperation with a recovery diode in such a way that the generator voltage remains approximately constant independently of the load and the speed. The voltage regulator (4) contains an integrally acting component for compensating for load-dependent and speed-dependent errors, which component is produced by a nonlinearly working integrator for the relative turn-on period of the current through the exciting winding (2) and is fed back into the regulating circuit of the voltage regulator (4). The nonlinearly of the output variable of the integrator is produced in that, for the formation of the correction function, one period portion during the current flow through the exciting winding (2) of the generator (1) and the controlled semiconductor switch is evaluated differently than the other period portion during the current flow through the exciting winding (2) and the recovery diode.

    摘要翻译: PCT No.PCT / DE90 / 00236 Sec。 371日期1990年11月16日 102(e)1990年11月16日PCT PCT 1990年3月23日PCT公布。 WO90 / 12443 PCT出版物 1990年10月18日提供了一种用于发电机(1)的电压调节器(4),特别用于机动车辆,其通过切换在发电机(1)的励磁绕组(2)中产生平均励磁电流 通过与恢复二极管协作的受控半导体开关的场电流的导通和截止,使得发电机电压保持独立于负载和速度几乎恒定。 电压调节器(4)包含用于补偿负载相关和速度相关误差的整体作用部件,该部件由非线性工作积分器产生,用于通过励磁绕组(2)的电流的相对导通周期,以及 被反馈到电压调节器(4)的调节电路。 产生积分器的输出变量的非线性,因为为了形成校正函数,在通过发电机(1)的激励绕组(2)的电流流过和受控半导体开关的一个周期部分被评估为不同 在电流通过励磁绕组(2)和恢复二极管的电流期间的其它周期部分。