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公开(公告)号：US20070131001A1
公开(公告)日：2007-06-14
申请号：US11504627
申请日：2006-08-16
IPC分类号： D06F23/00
摘要： A drum type washing machine reducing damage of a shaft system, and a method for assembling the shaft system are disclosed. The shaft system comprises a flange shaft coupled to a rear side of the drum to transmit the rotational force of the motor to the drum. A buffering material is provided between the drum and the flange shaft to distribute or absorb load or vibration transmitted from the drum to the flange shaft. The buffering material comprises a material having a liquid phase initially and changing to a solid phase having elasticity a predetermined period of time after contacting air. The buffering material is applied to a rear side of the drum or to a rear side of the shaft flange when assembling the shaft system.
摘要翻译： 公开了一种降低轴系的损伤的滚筒式洗衣机，以及组装轴系的方法。 轴系包括联接到滚筒的后侧的凸缘轴，以将马达的旋转力传递到滚筒。 在鼓和法兰轴之间设置有缓冲材料，以分散或吸收从滚筒传递到凸缘轴的载荷或振动。 缓冲材料首先包括具有液相的材料，并且在接触空气之后改变为具有预定时间段的弹性的固相。 当组装轴系时，缓冲材料被施加到滚筒的后侧或轴向凸缘的后侧。
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2.发明申请Composition for hard mask and method for manufacturing semiconductor device 审中-公开用于硬掩模的组合物和用于制造半导体器件的方法公开(公告)号：US20070154837A1
公开(公告)日：2007-07-05
申请号：US11416271
申请日：2006-05-02
IPC分类号： G03C1/00
CPC分类号： G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11
摘要： Disclosed herein is a composition that includes a silicon compound, a novolak resin, a catalyst, and an organic solvent, which can be used as a part of hard mask film over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.
摘要翻译： 本文公开了包含硅化合物，酚醛清漆树脂，催化剂和有机溶剂的组合物，其可以在制造半导体器件期间用作下面的硬掩模膜的一部分。 硬掩模膜在器件上形成均匀图案是有用的。
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公开(公告)号：US20060263717A1
公开(公告)日：2006-11-23
申请号：US11298385
申请日：2005-12-08
申请人： Geun Lee , Seung Moon , Seung Lee
发明人： Geun Lee , Seung Moon , Seung Lee
IPC分类号： G03C1/00
CPC分类号： G03F7/40
摘要： A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.
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4.发明申请Photoresist coating composition and method for forming fine pattern using the same 失效光刻胶涂料组合物和使用其形成精细图案的方法公开(公告)号：US20060263716A1
公开(公告)日：2006-11-23
申请号：US11265734
申请日：2005-11-02
申请人： Geun Lee
发明人： Geun Lee
IPC分类号： G03C1/00
CPC分类号： G03F7/40
摘要： A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all of the semiconductor processes.
摘要翻译： 包括由式1表示的化合物和水性溶剂的光致抗蚀剂涂料组合物，以及通过在光致抗蚀剂图案上涂覆该组合物以有效地减小光致抗蚀剂接触孔的尺寸和空间来形成精细图案的方法，其可以是 适用于所有的半导体工艺。
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5.发明申请Photoresist cleaning solutions and methods for pattern formation using the same 审中-公开光刻胶清洗液及使用其形成图案的方法公开(公告)号：US20050153855A1
公开(公告)日：2005-07-14
申请号：US10999248
申请日：2004-11-30
CPC分类号： C11D11/0047 , C11D1/58
摘要： A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.
摘要翻译： 光致抗蚀剂清洁溶液和使用其形成光致抗蚀剂图案的方法。 更具体地，公开了包含H 2 O 3的光致抗蚀剂清洁溶液和由式1表示的离子性表面活性剂，以及使用其形成光刻胶图案的方法。 通过在曝光步骤之前和/或之后将本发明的清洁溶液喷涂在光致抗蚀剂膜上，可以除去由重影图像引起的不需要的区域中的图案形成。
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6.发明申请Organic anti-reflective coating composition and pattern forming method using the same 失效有机防反射涂料组合物及使用其的图案形成方法公开(公告)号：US20050014094A1
公开(公告)日：2005-01-20
申请号：US10891568
申请日：2004-07-15
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/151 , Y10S430/162
摘要： Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.
摘要翻译： 公开了一种有机抗反射涂层组合物，其被引入到光致抗蚀剂的顶部和使用其的图案形成方法中，在用于通过使用193nm ArF或157nm VUV光形成用于光刻的光刻胶的超精细图案的工艺中 来源，更具体地涉及一种有机抗反射涂料组合物，其可以保护光致抗蚀剂免受大气胺以最小化后曝光延迟效应，并且使扩散反射（即摆动现象）引起的图案失真最小化，同时改善切口 现象和反射率的降低，以及使用其的图案形成方法。
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公开(公告)号：US07354607B2
公开(公告)日：2008-04-08
申请号：US11034254
申请日：2005-01-13
申请人： Yong-Ki Seo , Geun Lee , Kang-Pyo Lee , Hyun-Soon Sung
发明人： Yong-Ki Seo , Geun Lee , Kang-Pyo Lee , Hyun-Soon Sung
IPC分类号： A61K36/254
CPC分类号： A23L2/52 , A23L33/105 , A23V2002/00 , A23V2200/30 , A23V2250/2124
摘要： The present invention relates to a method of preparation of a drink composition containing powder of ginseng or red ginseng, and more particularly, it relates to a health drink containing powder of ginseng or red ginseng ultrafinely pulverized by a suitable pulverizer and its preparation. Therefore, it is possible to utilize all ingredients of ginseng or red ginseng contained in the drink, but a conventional ginseng drink contains extract of ginseng or red ginseng.
摘要翻译： 本发明涉及一种含有人参或红参粉末的饮料组合物的制备方法，更具体地说，涉及含有通过合适的粉碎机超细粉碎的人参或红参粉末的保健饮料及其制剂。 因此，可以利用饮料中所含的人参或红参的所有成分，但是常规人参饮料含有人参或红参的提取物。
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公开(公告)号：US20070269752A1
公开(公告)日：2007-11-22
申请号：US11835082
申请日：2007-08-07
IPC分类号： G03C5/305
摘要： Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.
摘要翻译： 当形成光致抗蚀剂图案时，光刻胶清洁溶液用于在曝光步骤之前或之后清洁半导体衬底。 清洗溶液包括H 2 O 2和由式1表示的非离子表面活性剂化合物。通过在暴露步骤之前或之后将所公开的清洁溶液喷涂在半导体衬底的表面上以形成光致抗蚀剂图案，所需的 避免了图案，并且避免了由不想要的区域产生的重影图像产生的不必要的图案，因为光致酸发生器产生的过量酸被中和和去除，并且避免了光致抗蚀剂聚合物的未曝光部分的损坏。 其中R 1和R 2独立地为H，C 1 -C 20烷基，C 5 烷基芳基或C 1 -C 10烷基酯; C 1 -C 15烷基芳基或C 1 -C 10烷基酯; m为1或2; n为10〜300的整数。 o为0或1。
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9.发明申请Water-soluble composition for coating photoresist pattern and method for forming fine patterns using the same 审中-公开用于涂覆光致抗蚀剂图案的水溶性组合物和使用其形成精细图案的方法公开(公告)号：US20060147834A1
公开(公告)日：2006-07-06
申请号：US11121769
申请日：2005-05-04
申请人： Geun Lee , Seung Moon , Seung Lee
发明人： Geun Lee , Seung Moon , Seung Lee
IPC分类号： G03F7/004
CPC分类号： G03F7/038 , C09D139/06 , G03F7/40 , H01L21/312
摘要： A composition for coating a photoresist pattern which comprises water and a compound of Formula 1 is coated on a previously formed photoresist pattern, thereby reducing a size of a space or contact hole of photoresist pattern effectively. The method using the composition is applied to all semiconductor processes for forming a fine photoresist pattern. wherein R1 and R2 are individually selected from the group consisting of H, linear or branched C1-C20 alkyl, linear or branched C2-C20 alkyl containing an ester linkage, linear or branched C2-C20 alkyl containing a ketone linkage, linear or branched C2-C20 alkyl containing a carboxylic acid group, linear or branched C7-C20 alkyl phenyl and linear or branched C3-C20 alkyl containing a acetal linkage; m is an integer ranging from 0 to 3000; and n is an integer ranging from 10 to 3000.
摘要翻译： 将包含水和式1化合物的光致抗蚀剂图案的组合物涂覆在预先形成的光致抗蚀剂图案上，从而有效地减小光致抗蚀剂图案的空间或接触孔的尺寸。 使用该组合物的方法适用于形成精细光致抗蚀剂图案的所有半导体工艺。 其中R 1和R 2分别选自H，直链或支链C 1 -C 20烷基， 直链或支链C 2 -C 20烷基，含有酯键的直链或支链C 2 -C 20烷基，直链或支链C 2 -C 20 含有酮键的烷基，含有羧酸基的直链或支链C 2 -C 20烷基，直链或支链C 7 C 20 -C 20烷基苯基和含有缩醛键的直链或支链C 3 -C 20烷基; m为0〜3000的整数; n为10〜3000的整数。
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10.发明申请Method for detecting column fail by controlling sense amplifier of memory device 失效通过控制存储器件的读出放大器来检测列失败的方法公开(公告)号：US20050254323A1
公开(公告)日：2005-11-17
申请号：US10882442
申请日：2004-07-01
申请人： Geun Lee
发明人： Geun Lee
CPC分类号： G11C29/026 , G11C7/06 , G11C29/02 , G11C29/028 , G11C29/50012 , G11C2029/5004
摘要： Disclosed is a method for detecting a column fail by controlling a sense amplifier of a memory device. The method includes the steps of enabling a word line of a memory cell of the memory device, adjusting a timing of a high-level driving voltage and a low-level driving voltage applied to the sense amplifier, and detecting an amplification result of the sense amplifier.
摘要翻译： 公开了一种通过控制存储器件的读出放大器来检测列失败的方法。 该方法包括以下步骤：使能存储器件的存储单元的字线，调整施加到读出放大器的高电平驱动电压的定时和低电平驱动电压，以及检测感测放大结果 放大器
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