公开(公告)号：US20060263717A1

公开(公告)日：2006-11-23

申请号：US11298385

申请日：2005-12-08

申请人： Geun Lee ,  Seung Moon ,  Seung Lee

发明人： Geun Lee ,  Seung Moon ,  Seung Lee

IPC分类号： G03C1/00

CPC分类号： G03F7/40

摘要： A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

公开(公告)号：US20060147834A1

公开(公告)日：2006-07-06

申请号：US11121769

申请日：2005-05-04

申请人： Geun Lee ,  Seung Moon ,  Seung Lee

发明人： Geun Lee ,  Seung Moon ,  Seung Lee

IPC分类号： G03F7/004

CPC分类号： G03F7/038 ,  C09D139/06 ,  G03F7/40 ,  H01L21/312

摘要： A composition for coating a photoresist pattern which comprises water and a compound of Formula 1 is coated on a previously formed photoresist pattern, thereby reducing a size of a space or contact hole of photoresist pattern effectively. The method using the composition is applied to all semiconductor processes for forming a fine photoresist pattern. wherein R1 and R2 are individually selected from the group consisting of H, linear or branched C1-C20 alkyl, linear or branched C2-C20 alkyl containing an ester linkage, linear or branched C2-C20 alkyl containing a ketone linkage, linear or branched C2-C20 alkyl containing a carboxylic acid group, linear or branched C7-C20 alkyl phenyl and linear or branched C3-C20 alkyl containing a acetal linkage; m is an integer ranging from 0 to 3000; and n is an integer ranging from 10 to 3000.

摘要翻译： 将包含水和式1化合物的光致抗蚀剂图案的组合物涂覆在预先形成的光致抗蚀剂图案上，从而有效地减小光致抗蚀剂图案的空间或接触孔的尺寸。 使用该组合物的方法适用于形成精细光致抗蚀剂图案的所有半导体工艺。 其中R 1和R 2分别选自H，直链或支链C 1 -C 20烷基， 直链或支链C 2 -C 20烷基，含有酯键的直链或支链C 2 -C 20烷基，直链或支链C 2 -C 20 含有酮键的烷基，含有羧酸基的直链或支链C 2 -C 20烷基，直链或支链C 7 C 20 -C 20烷基苯基和含有缩醛键的直链或支链C 3 -C 20烷基; m为0〜3000的整数; n为10〜3000的整数。

公开(公告)号：US20050233921A1

公开(公告)日：2005-10-20

申请号：US10999280

申请日：2004-11-30

申请人： Geun Lee ,  Seung Moon

发明人： Geun Lee ,  Seung Moon

IPC分类号： G03F7/32 ,  C11D1/00 ,  C11D1/72 ,  C11D11/00 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/40 ,  C11D1/72 ,  C11D1/721 ,  C11D11/0047 ,  H01L21/0273

摘要： A cleaning solution for photoresist used to clean a semiconductor substrate in the final process after a developing step for formation of photoresist patterns, and a method for forming a photoresist pattern using the same. The cleaning solution for photoresist comprising a compound of Formula 1, an optional alcohol compound and water has a lower surface tension than that of distilled water used as a conventional cleaning solution. Therefore, when the disclosed cleaning solution is used to wash a semiconductor substrate in the final process after the developing step for formation of photoresist patterns, pattern collapse can remarkably be decreased. R{(OCH2CH2)l[O(CH2)mCH2]n}R′  Formula 1 wherein R and R′ are independently H, C1-C40 alkyl or C1-C40 alkyl aryl; l and n are independently integers ranging from 1 to 500; m is an integer ranging from 0 to 10; and the weight average molecular weight ranges from 100 to 50,000.

摘要翻译： 在用于形成光致抗蚀剂图案的显影步骤之后的最终工艺中用于清洁半导体衬底的光致抗蚀剂的清洁溶液，以及使用其形成光致抗蚀剂图案的方法。 包含式1化合物，任选的醇化合物和水的光致抗蚀剂清洗溶液具有比用作常规清洁溶液的蒸馏水低的表面张力。 因此，在形成光致抗蚀剂图案的显影步骤之后，当所公开的清洗溶液在最终工艺中用于洗涤半导体衬底时，可以显着降低图案塌陷。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R {（OCH 2 CH 2 CH 2） 其中R 1为式（1）其中n为0或1， line-formula description =“In-line Formulas”end =“tail”？>其中R和R'独立地为H，C 1 -C 40烷基或C < C 1 -C 40烷基芳基; 1和n独立地为1至500的整数; m为0〜10的整数; 重均分子量为100〜50,000。

公开(公告)号：US20050026070A1

公开(公告)日：2005-02-03

申请号：US10719905

申请日：2003-11-21

申请人： Geun Lee ,  Cheol Bok ,  Seung Moon ,  Ki Shin ,  Jae Kim ,  Jung Kim ,  Sang Lee ,  Jae Kang

发明人： Geun Lee ,  Cheol Bok ,  Seung Moon ,  Ki Shin ,  Jae Kim ,  Jung Kim ,  Sang Lee ,  Jae Kang

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03C1/76

CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/108

摘要： Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.

摘要翻译： 公开了光致抗蚀剂聚合物和光致抗蚀剂组合物。 由式1表示的光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且对显影液具有高亲和性，从而提高LER（线边缘粗糙度）。 其中X1，X2，X3，R1，R2，R3，R4，R5，m，n，o，a，b，c，d和e如说明书中所定义。

公开(公告)号：US20060246382A1

公开(公告)日：2006-11-02

申请号：US11312107

申请日：2005-12-20

申请人： Geun Lee ,  Cheol Bok ,  Seung Moon ,  Sung Lee

发明人： Geun Lee ,  Cheol Bok ,  Seung Moon ,  Sung Lee

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  G03F7/168 ,  G03F7/38

摘要： A method for reducing a photoresist pattern wherein, a photoresist film is formed, an aqueous composition comprising water and a surfactant is sprayed, and the pattern is treated by thermal energy to reduce the photoresist pattern uniformly and vertically, thereby improving an etching bias and enhancing process margins.

摘要翻译： 喷射光致抗蚀剂图案的方法，其中形成光致抗蚀剂膜，包含水和表面活性剂的水性组合物，并且通过热能处理图案以均匀和垂直地降低光致抗蚀剂图案，从而改善蚀刻偏差和增强 流程利润率。

公开(公告)号：US20060141390A1

公开(公告)日：2006-06-29

申请号：US11126042

申请日：2005-05-10

申请人： Geun Lee ,  Seung Moon

发明人： Geun Lee ,  Seung Moon

IPC分类号： G03C1/76

CPC分类号： G03F7/40

摘要： A composition for coating a photoresist pattern includes water and a compound including a repeating unit represented by Formula 1. The composition is coated on a previously formed pattern, thereby effectively reducing a size of a space or contact hole of photoresist pattern. A method for forming a photoresist pattern using the composition is usefully applied to all semiconductor processes for forming a fine pattern. wherein R1 to R6, R′, R″ and n are defined in the specification.

摘要翻译： 用于涂布光致抗蚀剂图案的组合物包括水和包含由式1表示的重复单元的化合物。组合物涂覆在预先形成的图案上，从而有效地减小光致抗蚀剂图案的空间或接触孔的尺寸。 使用该组合物形成光致抗蚀剂图案的方法可用于形成精细图案的所有半导体工艺。 其中R 1至R 6，R'，R“和n在说明书中定义。

公开(公告)号：US20060187173A1

公开(公告)日：2006-08-24

申请号：US11406728

申请日：2006-04-19

申请人： Seung Moon

发明人： Seung Moon

IPC分类号： G09G3/36

CPC分类号： G09G3/3655 ,  G09G3/3614 ,  G09G2320/0219 ,  G09G2320/0223 ,  G09G2320/0247

摘要： A liquid crystal display and method for driving the liquid crystal display are provided. The liquid crystal display includes a liquid crystal panel assembly including a plurality of gate lines, a plurality of data lines intersecting the gate lines, a plurality of switching elements connected to the gate lines and the data lines, a plurality of pixel electrodes connected to the switching elements, and a reference electrode opposing the pixel electrodes, a gate driver for applying gate signals to the gate lines to activate the switching elements, a data driver for applying data voltages that are be applied to the pixel electrodes to the data lines, and a reference voltage generator for generating first to third reference voltages to be respectively applied to first to third positions of the reference electrode, the first reference voltage being smaller than the third reference voltage and the third reference voltage being smaller than the second reference voltage, and the first position being closer to the gate driver than the third position and the third position being closer to the gate driver than the second position.

公开(公告)号：US20070042298A1

公开(公告)日：2007-02-22

申请号：US11481299

申请日：2006-07-05

申请人： Jae Jung ,  Sung Lee ,  Keun Ban ,  Cheol Bok ,  Seung Moon

发明人： Jae Jung ,  Sung Lee ,  Keun Ban ,  Cheol Bok ,  Seung Moon

IPC分类号： G03F7/26

CPC分类号： G03F7/70341

摘要： Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising rapidly accelerating the rotation of a wafer after exposing and before developing steps to remove an immersion lithography solution, thereby effectively reducing water mark defects.

摘要翻译： 公开了一种使用浸没式光刻工艺制造半导体器件的方法，包括在曝光之后和在显影步骤之前快速加速晶片的旋转以去除浸没光刻溶液，从而有效地减少水痕缺陷。

公开(公告)号：US20060164350A1

公开(公告)日：2006-07-27

申请号：US11312680

申请日：2005-12-19

申请人： Sung-Man Kim ,  Seong-Young Lee ,  Beom-Jun Kim ,  Seung Moon ,  Hyang-Shik Kong

发明人： Sung-Man Kim ,  Seong-Young Lee ,  Beom-Jun Kim ,  Seung Moon ,  Hyang-Shik Kong

IPC分类号： G09G3/36

CPC分类号： G09G3/3614 ,  G02F1/1345 ,  G02F2201/40 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2300/0443

摘要： Disclosed is a thin film transistor array panel. The panel includes a plurality of pixels arranged in the form of a matrix each with a pixel electrode and a switching element connected to the pixel electrode, and a plurality of gate lines connected to the switching elements and extending in the row direction. A pair of the gate lines are connected to pixels in each pixel row. A plurality of data lines are connected to the switching elements, and elongated in the column direction. Each data line is provided between two columns of the pixels. The respective data lines are horizontally bent between the two adjacent gate lines, and vertically extend between the two pixel rows.

摘要翻译： 公开了一种薄膜晶体管阵列面板。 面板包括以矩阵形式布置的多个像素，每个像素连接有像素电极和连接到像素电极的开关元件，以及连接到开关元件并沿行方向延伸的多条栅极线。 一对栅极线连接到每个像素行中的像素。 多个数据线连接到开关元件，并且在列方向上延伸。 每个数据线都在两列像素之间提供。 相应的数据线在两个相邻的栅极线之间水平弯曲，并且在两个像素行之间垂直延伸。

公开(公告)号：US20050156558A1

公开(公告)日：2005-07-21

申请号：US11081672

申请日：2005-03-17

申请人： Sung Kang ,  Seung Moon

发明人： Sung Kang ,  Seung Moon

IPC分类号： G02F1/133 ,  G02F1/1335 ,  G02F1/1362 ,  H02J7/00

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F2001/133342

摘要： A liquid crystal display having two display surfaces includes a first substrate supporting a first thin film transistor array and a first color filter array, and a second substrate supporting a second color filter array facing the first thin film transistor array and a second thin film transistor facing the first color filter array, and a layer of liquid crystal material provided between the first and second substrates.

摘要翻译： 具有两个显示表面的液晶显示器包括支撑第一薄膜晶体管阵列和第一滤色器阵列的第一基板和支撑面向第一薄膜晶体管阵列的第二滤色器阵列的第二基板和面对第一薄膜晶体管阵列的第二薄膜晶体管 第一滤色器阵列和设置在第一和第二基板之间的液晶材料层。