UTILIZING NETWORKED 3D VOLTAGE REGULATION MODULES (VRM) TO OPTIMIZE POWER AND PERFORMANCE OF A DEVICE
    1.
    发明申请
    UTILIZING NETWORKED 3D VOLTAGE REGULATION MODULES (VRM) TO OPTIMIZE POWER AND PERFORMANCE OF A DEVICE 有权
    利用网络化的3D电压调节模块(VRM)优化设备的功率和性能

    公开(公告)号:US20120159203A1

    公开(公告)日:2012-06-21

    申请号:US13399799

    申请日:2012-02-17

    IPC分类号: G06F1/26

    CPC分类号: G06F1/26

    摘要: A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.

    摘要翻译: 提出了一种使用网络化的三维电压调节模块阵列(VRM)来实时优化电压岛上部件功率使用的方法,系统和计算机程序。 联网的VRM设备并行工作,为连接的电压岛提供足够的电力,并补充系统中可能需要额外功率的重要事件的其他VRM。

    Optimizing voltage on a power plane using a networked voltage regulation module array
    4.
    发明授权
    Optimizing voltage on a power plane using a networked voltage regulation module array 失效
    使用网络电压调节模块阵列优化电源平面上的电压

    公开(公告)号:US08341434B2

    公开(公告)日:2012-12-25

    申请号:US12037743

    申请日:2008-02-26

    IPC分类号: G06F1/00

    CPC分类号: G06F1/26

    摘要: A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.

    摘要翻译: 提出了一种使用网络化的三维电压调节模块阵列(VRM)来实时优化电压岛上部件功率使用的方法,系统和计算机程序。 联网的VRM设备并行工作,为连接的电压岛提供足够的电力,并补充系统中可能需要额外功率的重要事件的其他VRM。

    METHOD OF DESIGNING AN INTEGRATED CIRCUIT BASED ON A COMBINATION OF MANUFACTURABILITY, TEST COVERAGE AND, OPTIONALLY, DIAGNOSTIC COVERAGE
    5.
    发明申请
    METHOD OF DESIGNING AN INTEGRATED CIRCUIT BASED ON A COMBINATION OF MANUFACTURABILITY, TEST COVERAGE AND, OPTIONALLY, DIAGNOSTIC COVERAGE 有权
    基于可制造性,测试覆盖和可选择的诊断覆盖的组合设计集成电路的方法

    公开(公告)号:US20120066657A1

    公开(公告)日:2012-03-15

    申请号:US12880228

    申请日:2010-09-13

    IPC分类号: G06F17/50 G06F9/455

    摘要: Disclose are embodiments of an integrated circuit design method based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage. Design-for manufacturability (DFM) modifications to the layout of an integrated circuit can be made in light of test coverage. Alternatively, test coverage of an integrated circuit can be established in light of DFM modifications. Alternatively, an iterative process can be performed, where DFM modifications to the layout of an integrated circuit are made in light of test coverage and then test coverage is altered in light of the DFM modifications. Alternatively, DFM modifications to the layout of an integrated circuit can be made in light of test coverage and also diagnostic coverage. In any case, after making DFM modifications and establishing test coverage, any unmodified and untested nodes (and, optionally, any unmodified and undiagnosable tested nodes) in the integrated circuit can be identified and tagged for subsequent in-line inspection.

    摘要翻译: 披露是基于可制造性,测试覆盖和任选的诊断覆盖的组合的集成电路设计方法的实施例。 根据测试覆盖范围,可以对集成电路布局的可制造性(DFM)进行设计修改。 或者,可以根据DFM修改建立集成电路的测试覆盖。 或者,可以执行迭代处理,其中根据测试覆盖进行DFM对集成电路的布局的修改,然后根据DFM修改来改变测试覆盖。 或者,DFM可以根据测试覆盖范围和诊断覆盖范围对集成电路布局进行修改。 在任何情况下,在进行DFM修改和建立测试覆盖之后,可以识别和标记集成电路中的任何未修改和未测试的节点(以及可选地,任何未修改和不可判定的测试节点)以便随后的在线检查。

    Method of designing an integrated circuit based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage
    6.
    发明授权
    Method of designing an integrated circuit based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage 有权
    基于可制造性,测试覆盖和可选地诊断覆盖的组合来设计集成电路的方法

    公开(公告)号:US08347260B2

    公开(公告)日:2013-01-01

    申请号:US12880228

    申请日:2010-09-13

    IPC分类号: G06F11/22

    摘要: Disclose are embodiments of an integrated circuit design method based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage. Design-for manufacturability (DFM) modifications to the layout of an integrated circuit can be made in light of test coverage. Alternatively, test coverage of an integrated circuit can be established in light of DFM modifications. Alternatively, an iterative process can be performed, where DFM modifications to the layout of an integrated circuit are made in light of test coverage and then test coverage is altered in light of the DFM modifications. Alternatively, DFM modifications to the layout of an integrated circuit can be made in light of test coverage and also diagnostic coverage. In any case, after making DFM modifications and establishing test coverage, any unmodified and untested nodes (and, optionally, any unmodified and undiagnosable tested nodes) in the integrated circuit can be identified and tagged for subsequent in-line inspection.

    摘要翻译: 披露是基于可制造性,测试覆盖和任选的诊断覆盖的组合的集成电路设计方法的实施例。 根据测试覆盖范围,可以对集成电路布局的可制造性(DFM)进行设计修改。 或者,可以根据DFM修改建立集成电路的测试覆盖。 或者,可以执行迭代处理,其中根据测试覆盖进行DFM对集成电路的布局的修改,然后根据DFM修改来改变测试覆盖。 或者,DFM可以根据测试覆盖范围和诊断覆盖范围对集成电路布局进行修改。 在任何情况下,在进行DFM修改和建立测试覆盖之后,可以识别和标记集成电路中的任何未修改和未测试的节点(以及可选地,任何未修改和不可判定的测试节点)以便随后的在线检查。

    Soft error correction in sleeping processors
    7.
    发明授权
    Soft error correction in sleeping processors 有权
    睡眠处理器中的软错误校正

    公开(公告)号:US08234554B2

    公开(公告)日:2012-07-31

    申请号:US12170462

    申请日:2008-07-10

    IPC分类号: H03M13/00

    摘要: An error-correction code is generated on a line-by-line basis of the physical logic register and latch contents that store encoded words within a processor just before the processor is put into sleep mode, and later-generated syndrome bits are checked for any soft errors when the processor wakes back up, e.g., as part of the power-up sequence.

    摘要翻译: 在处理器进入睡眠模式之前,将物理逻辑寄存器和锁存内容逐行生成在处理器内的处理器内,生成错误校正码,并检查后来生成的校验码位 处理器唤醒时出现软错误,例如作为上电顺序的一部分。

    System and method for designing a low leakage monotonic CMOS logic circuit
    8.
    发明授权
    System and method for designing a low leakage monotonic CMOS logic circuit 有权
    用于设计低泄漏单调CMOS逻辑电路的系统和方法

    公开(公告)号:US07996810B2

    公开(公告)日:2011-08-09

    申请号:US12103038

    申请日:2008-04-15

    IPC分类号: G06F17/50

    摘要: A computer system for designing a low leakage monotonic CMOS logic circuit. The system performing the computer implements steps of: (a) specifying a reference PFET having its threshold voltage and its gate dielectric thickness and a reference NFET having its threshold voltage and its gate dielectric thickness; (b) synthesizing a schematic circuit design with standard design elements, the standard design elements including one or more reference PFETS and one or more reference NFETs; (c) analyzing one or more circuits for logic stages having predominantly high input logic states or predominantly low input logic states; (d) selecting one or more logic stages determined to have predominantly high input logic states or predominantly low input logic states; and (e) replacing the standard design elements of the selected logic stages with reduced current leakage elements.

    摘要翻译: 一种用于设计低泄漏单调CMOS逻辑电路的计算机系统。 执行计算机的系统实现以下步骤:(a)指定具有其阈值电压及其栅介质厚度的参考PFET和具有其阈值电压及其栅介质厚度的参考NFET; (b)用标准设计元件合成示意电路设计,标准设计元件包括一个或多个参考PFET和一个或多个参考NFET; (c)分析具有主要为高输入逻辑状态或主要为低输入逻辑状态的逻辑级的一个或多个电路; (d)选择确定为具有主要高输入逻辑状态或主要为低输入逻辑状态的一个或多个逻辑级; 和(e)用减少的电流泄漏元件代替所选逻辑级的标准设计元件。

    Method and apparatus for on-the-fly minimum power state transition
    9.
    发明授权
    Method and apparatus for on-the-fly minimum power state transition 失效
    用于实时最小功率状态转换的方法和装置

    公开(公告)号:US07757137B2

    公开(公告)日:2010-07-13

    申请号:US11691856

    申请日:2007-03-27

    IPC分类号: G01R31/28

    摘要: The invention includes a novel scan chain structure for LSSD or GSD IC operation. The scan chain structure includes a first flip-flop (L1) and a second flip-flop (L2) configured to operate the first flip-flop (L1) in normal mode operation, in scan mode operation, in initialization mode and in low leakage power mode operation, wherein each flip-flop within a long scan chain of latches includes a data input, data output, a clock input, a scan-in input and a scan-out output, arranged for normal mode operation. A buffer circuit is electrically connected between the scan-out output of the second flip-flop (L2) and the scan-in input of the first flip-flop (L1) for the next latch in the scan chain, the buffer circuit including a control element that controls the operation the first flip-flop (L1) to scan mode or low power leakage mode. The first flip-flop (L1) is set to a data output value upon exit from low power leakage mode that is the same value that it is set to at initialization during normal mode operation. The switching occurs in only one clock cycle.

    摘要翻译: 本发明包括用于LSSD或GSD IC操作的新型扫描链结构。 扫描链结构包括在扫描模式操作中,在初始化模式和低泄漏状态下,被配置为在正常模式操作中操作第一触发器(L1)的第一触发器(L1)和第二触发器(L2) 功率模式操作,其中锁存器的长扫描链内的每个触发器包括布置用于正常模式操作的数据输入,数据输出,时钟输入,扫描输入和扫描输出输出。 缓冲电路电连接在第二触发器(L2)的扫出输出端和第一触发器(L1)的扫描输入端之间用于扫描链中的下一个锁存器,缓冲电路包括一个 控制元件,其控制第一触发器(L1)的扫描模式或低功率泄漏模式的操作。 在从低功率泄漏模式退出时,第一触发器(L1)被设置为数据输出值,该值是在正常模式操作期间初始化时被设置为相同的值。 开关仅在一个时钟周期内发生。

    Laser fuse structures for high power applications
    10.
    发明授权
    Laser fuse structures for high power applications 失效
    用于大功率应用的激光熔丝结构

    公开(公告)号:US07701035B2

    公开(公告)日:2010-04-20

    申请号:US11164640

    申请日:2005-11-30

    IPC分类号: H01L23/525 H01L21/768

    摘要: The present invention relates to a laser fuse structure for high power applications. Specifically, the laser fuse structure of the present invention comprises first and second conductive supporting elements (12a, 12b), at least one conductive fusible link (14), first and second connection elements (20a, 20b), and first and second metal lines (22a, 22b). The conductive supporting elements (12a, 12b), the conductive fusible link (14), and the metal lines (22a, 22b) are located at a first metal level (3), while the connect elements (20a, 20b) are located at a second, different metal level (4) and are connected to the conductive supporting elements (12a, 12b) and the metal lines (22a, 22b) by conductive via stacks (18a, 18b, 23a, 23b) that extend between the first and second metal levels (3, 4).

    摘要翻译: 本发明涉及一种用于大功率应用的激光熔丝结构。 具体地,本发明的激光熔丝结构包括第一和第二导电支撑元件(12a,12b),至少一个导电熔丝(14),第一和第二连接元件(20a,20b)以及第一和第二金属线 (22a,22b)。 导电支撑元件(12a,12b),导电熔丝(14)和金属线(22a,22b)位于第一金属层(3)处,而连接元件(20a,20b)位于 第二不同的金属层(4),并且通过在第一和第二金属层之间延伸的导电通孔叠层(18a,18b,23a,23b)连接到导电支撑元件(12a,12b)和金属线(22a,22b) 第二金属含量(3,4)。