摘要:
Disclose are embodiments of an integrated circuit design method based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage. Design-for manufacturability (DFM) modifications to the layout of an integrated circuit can be made in light of test coverage. Alternatively, test coverage of an integrated circuit can be established in light of DFM modifications. Alternatively, an iterative process can be performed, where DFM modifications to the layout of an integrated circuit are made in light of test coverage and then test coverage is altered in light of the DFM modifications. Alternatively, DFM modifications to the layout of an integrated circuit can be made in light of test coverage and also diagnostic coverage. In any case, after making DFM modifications and establishing test coverage, any unmodified and untested nodes (and, optionally, any unmodified and undiagnosable tested nodes) in the integrated circuit can be identified and tagged for subsequent in-line inspection.
摘要:
Disclose are embodiments of an integrated circuit design method based on a combination of manufacturability, test coverage and, optionally, diagnostic coverage. Design-for manufacturability (DFM) modifications to the layout of an integrated circuit can be made in light of test coverage. Alternatively, test coverage of an integrated circuit can be established in light of DFM modifications. Alternatively, an iterative process can be performed, where DFM modifications to the layout of an integrated circuit are made in light of test coverage and then test coverage is altered in light of the DFM modifications. Alternatively, DFM modifications to the layout of an integrated circuit can be made in light of test coverage and also diagnostic coverage. In any case, after making DFM modifications and establishing test coverage, any unmodified and untested nodes (and, optionally, any unmodified and undiagnosable tested nodes) in the integrated circuit can be identified and tagged for subsequent in-line inspection.
摘要:
A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.
摘要:
A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.
摘要:
A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.
摘要:
A method, system, and computer program for using an array of networked 3D voltage regulation modules (VRMs) to optimize power usage by components on a voltage island in real time is presented. The networked VRM devices work in parallel to supply adequate power to connected voltage islands, and to supplement other VRMs in the system that may require additional power in the case of a critical event.
摘要:
A method of forming dielectric spacers including providing a substrate comprising a first region having a first plurality of gate structures and a second region having a second plurality of gate structures and at least one oxide containing material or a carbon containing material. Forming a nitride containing layer over the first region having a thickness that is less than the thickness of the nitride containing layer that is present in the second region. Forming dielectric spacers from the nitride containing layer on the first plurality the second plurality of gate structures. The at least one oxide containing material or carbon containing material accelerates etching in the second region so that the thickness of the dielectric spacers in the first region is substantially equal to the thickness of the dielectric spacers in the second region of the substrate.
摘要:
Disclosed are a system and a method of correcting systematic, design-based, parametric variations on integrated circuit chips to minimize circuit limited yield loss. Processing information and a map of a chip are stored. The processing information can indicate an impact, on a given device parameter, of changes in a value for a specification associated with a given process step. The map can indicate regional variations in the device parameter (e.g., threshold voltage). Based on the processing information and using the map as a guide, different values for the specification are determined, each to be applied in a different region of the integrated circuit chip during the process step in order to offset the mapped regional parametric variations. A process tool can then be selectively controlled to ensure that during chip manufacturing the process step is performed accordingly and, thereby to ensure that the regional parametric variations are minimized.
摘要:
Methods and structures for enhancing the homogeneity in a ratio of perimeter to surface area among heterogeneous features in different substrate regions. At least one shape on the substrate includes an added edge effective to reduce a difference in the perimeter-to-surface area ratio between the features in a first substrate region and features in a second substrate region. The improved homogeneity in the perimeter-to-surface area ratio reduces variations in a thickness of a conformal layer deposited across the features in the first and second substrate regions.
摘要:
Disclosed are a system and a method of correcting systematic, design-based, parametric variations on integrated circuit chips to minimize circuit limited yield loss. Processing information and a map of a chip are stored. The processing information can indicate an impact, on a given device parameter, of changes in a value for a specification associated with a given process step. The map can indicate regional variations in the device parameter (e.g., threshold voltage). Based on the processing information and using the map as a guide, different values for the specification are determined, each to be applied in a different region of the integrated circuit chip during the process step in order to offset the mapped regional parametric variations. A process tool can then be selectively controlled to ensure that during chip manufacturing the process step is performed accordingly and, thereby to ensure that the regional parametric variations are minimized.