公开(公告)号：US20200328306A1

公开(公告)日：2020-10-15

申请号：US16382184

申请日：2019-04-11

Applicant: GlobalFoundries Inc.

Inventor： Jin Wallner ,  Heng Yang ,  Judson Robert Holt

IPC: H01L29/78 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/088

Abstract: A method of forming a semiconductor device is provided, which includes providing gate structures over an active region and forming a hard mask segment on the active region positioned between a first gate structure and a second gate structure. Cavities are formed in the active region using the gate structures and the hard mask segment as masking features, wherein each cavity has a width substantially equal to a minimum gate-to-gate spacing of the semiconductor device. Epitaxial material is grown in the cavities to form substantially uniform epitaxial structures in the active region.

公开(公告)号：US09887135B1

公开(公告)日：2018-02-06

申请号：US15581510

申请日：2017-04-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jin Wallner ,  Haoren Zhuang

IPC: H01L21/033 ,  H01L21/8234 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/3115 ,  G03F7/00 ,  H01L21/308

CPC classification number: H01L21/823437 ,  G03F7/0002 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31155 ,  H01L21/32139 ,  H01L29/6653 ,  H01L29/6656

Abstract: A method includes forming a first mandrel layer above a first process layer. A first implant region is formed in the first mandrel layer. The first mandrel layer is patterned to define a plurality of first mandrel elements. At least a first subset of the first mandrel elements is formed from the first mandrel layer outside the first implant region and a second subset of the first mandrel elements is formed from the first implant region. First spacers are formed on sidewalls of the plurality of first mandrel elements. The first subset of the first mandrel elements are selectively removed without removing the second subset of the first mandrel elements. The first process layer is patterned using the first spacers and the second subset of the first mandrel elements as an etch mask.

公开(公告)号：US10580684B2

公开(公告)日：2020-03-03

申请号：US15950907

申请日：2018-04-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jin Wallner ,  Katherina Babich ,  Sunil Kumar Singh

IPC: H01L21/762 ,  H01L29/06 ,  H01L29/66

Abstract: A method of forming an SDB that is self-aligned to a dummy gate and the resulting device are provided. Embodiments include providing a plurality of gates over a SOI layer above a BOX layer, each gate having a pair of sidewall spacers and a cap layer, and a raised S/D epitaxial regions over the SOI layer between each gate; removing a gate of the plurality of gates and a portion of the SOI layer exposed by the removing of the gate, and a portion of the BOX layer underneath the SOI layer, the removing forms a trench; forming a liner of a first dielectric material over and along sidewalls of the trench; and filling the trench with a second dielectric material.