公开(公告)号：US20240023345A1

公开(公告)日：2024-01-18

申请号：US17866756

申请日：2022-07-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Venkatesh Gopinath ,  Bipul C. Paul ,  Xiaoli Hu

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2472 ,  H01L27/2454 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0069 ,  H01L45/1206

Abstract: Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a first plurality of resistive memory elements including a first plurality of bottom electrodes, a first top electrode, and a first switching layer between the first top electrode and the first plurality of bottom electrodes. The structure further comprises a second plurality of resistive memory elements including a second plurality of bottom electrodes, a second top electrode, and a second switching layer between the second top electrode and the second plurality of bottom electrodes. The first top electrode is shared by the first plurality of resistive memory elements, and the second top electrode is shared by the second plurality of resistive memory elements.

公开(公告)号：US20240170560A1

公开(公告)日：2024-05-23

申请号：US17990898

申请日：2022-11-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander Derrickson ,  Venkatesh Gopinath ,  John J. Pekarik ,  Hong Yu ,  Vibhor Jain ,  David Pritchard

IPC: H01L29/735 ,  H01L27/06 ,  H01L29/66 ,  H01L29/732

CPC classification number: H01L29/735 ,  H01L27/0623 ,  H01L29/66871 ,  H01L29/732

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer. The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer. The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.

公开(公告)号：US20240172455A1

公开(公告)日：2024-05-23

申请号：US17990800

申请日：2022-11-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： John J. Pekarik ,  Hong Yu ,  Vibhor Jain ,  Alexander Derrickson ,  Venkatesh Gopinath

IPC: H01L47/00 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L27/2445 ,  H01L29/66242 ,  H01L29/7371 ,  H01L45/1233 ,  H01L45/16

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a substrate having a top surface, a trench isolation region in the substrate, and a base layer on the top surface of the substrate. The base layer extending across the trench isolation region. A first bipolar junction transistor includes a first collector in the substrate and a first emitter on a first portion of the first base layer. The first portion of the first base layer is positioned between the first collector and the first emitter. A second bipolar junction transistor includes a second collector in the substrate and a second emitter on a second portion of the first base layer. The second portion of the first base layer is positioned between the second collector and the second emitter.