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公开(公告)号:US11581291B2
公开(公告)日:2023-02-14
申请号:US16643307
申请日:2017-07-24
Applicant: GOERTEK INC.
Inventor: Peixuan Chen , Quanbo Zou , Xiangxu Feng , Tao Gan , Xiaoyang Zhang
IPC: H01L25/075 , H01L33/00 , G09F9/33 , H01L21/683 , H01L21/78 , H01L33/48
Abstract: A micro-LED display device and a manufacturing method thereof are disclosed. The method comprises: forming micro-LEDs (202) on a carrier substrate (201), wherein the carrier substrate (201) is transparent for a laser which is used in laser lifting-off; filling trenches between the micro-LEDs (202) on the carrier substrate (201) with a holding material (209); performing a laser lifting-off on selected ones of the micro-LEDs (202) to lift off them from the carrier substrate (201), wherein the selected micro-LEDs (202) are held on the carrier substrate (201) through the holding material (209); bonding the selected micro-LEDs (202) onto a receiving substrate (207) of the micro-LED display device; separating the selected micro-LEDs (202) from the carrier substrate (201) to transfer them to the receiving substrate (207).
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公开(公告)号:US11205677B2
公开(公告)日:2021-12-21
申请号:US16473538
申请日:2017-01-24
Applicant: Goertek, Inc.
Inventor: Quanbo Zou , Peixuan Chen , Xiangxu Feng
Abstract: A micro-LED device, a display apparatus and a method for manufacturing a micro-LED device are provided. The micro-LED device comprises: a growth substrate; a plurality of vertical micro-LEDs formed on the growth substrate; a first type electrode formed on top of each of the vertical micro-LEDs; and a second type electrode formed on side surface of each of the vertical micro-LEDs.
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公开(公告)号:US11107946B2
公开(公告)日:2021-08-31
申请号:US16088564
申请日:2017-12-19
Applicant: Goertek Inc.
Inventor: Xiangxu Feng , Peixuan Chen , Quanbo Zou
Abstract: The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.
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公开(公告)号:US11024611B1
公开(公告)日:2021-06-01
申请号:US16620224
申请日:2017-06-09
Applicant: Goertek, Inc.
Inventor: Quanbo Zou , Peixuan Chen , Xiangxu Feng , Tao Gan , Xiaoyang Zhang , Zhe Wang
IPC: H01L27/12 , H01L25/075 , H01L21/67 , H01L21/677 , H01L33/00 , H01L51/00 , H01L21/683 , H01L21/60
Abstract: A micro-LED transfer method, manufacturing method and display device are provided. The micro-LED transfer method comprises: bonding the micro-LED array on a first substrate onto a receiving substrate through micro-bumps, wherein the first substrate is laser transparent; applying underfill into a gap between the first substrate and the receiving substrate; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate; and removing the underfill.
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公开(公告)号:US10862001B2
公开(公告)日:2020-12-08
申请号:US16339494
申请日:2016-10-08
Applicant: GOERTEK. INC
Inventor: Quanbo Zou , Denio Weng , Peixuan Chen , Xiangxu Feng
IPC: H01L33/06 , H01L27/32 , H01L51/50 , H05B33/14 , H01L25/075 , H01L27/12 , H01L27/15 , H01L33/50 , H01L25/16
Abstract: A display device and an electronics apparatus are provided. The display device comprises: a display substrate; and arrays of light-emitting elements on the display substrate, wherein the light-emitting elements include at least two types of electroluminescent quantum-dot LED, photoluminescent quantum-dot LED and micro-LED, wherein at least one type of the light-emitting elements is an electroluminescent quantum-dot LED, or at least two types of the light-emitting elements are micro-LED.
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公开(公告)号:US11099466B2
公开(公告)日:2021-08-24
申请号:US16475758
申请日:2017-01-09
Applicant: GOERTEK. INC
Inventor: Peixuan Chen , Quanbo Zou , Xiangxu Feng
Abstract: A projection module and an electronics apparatus are provided. The projection module comprises: a projection chip, having micro semiconductor light emitting devices thereon; and a projection lens unit, wherein the micro semiconductor light emitting devices produce projection light to create a projection image, and the projection lens unit receives the projection image and projects it to a projection surface.
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公开(公告)号:US11024773B2
公开(公告)日:2021-06-01
申请号:US16347603
申请日:2016-11-06
Applicant: GOERTEK. INC
Inventor: Quanbo Zou , Peixuan Chen , Xiangxu Feng
Abstract: The present invention discloses a micro-LED with vertical structure, display device, electronics apparatus and manufacturing method. The micro-LED with vertical structure comprises: a bottom electrode bonded on a display substrate; a first type doped region provided above the bottom electrode; a second type doped region provided above the first type doped region; and a side-contact electrode covering at least one part of a peripheral of the second type doped region.
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公开(公告)号:US10937924B2
公开(公告)日:2021-03-02
申请号:US16339482
申请日:2016-10-08
Applicant: GOERTEK. INC
Inventor: Quanbo Zou , Zhe Wang , Peixuan Chen , Xiangxu Feng
Abstract: A display device and an electronics apparatus, the display device comprises: a display substrate; and at least two stacked layers on the display substrate, wherein each stacked layer includes one micro-LED array.
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公开(公告)号:US10896927B2
公开(公告)日:2021-01-19
申请号:US16320019
申请日:2016-08-22
Applicant: GOERTEK INC.
Inventor: Quanbo Zou , Peixuan Chen , Xiangxu Feng
IPC: H01L27/15 , H01L33/62 , H01L33/60 , H01L33/00 , H01L25/075
Abstract: A micro-LED transfer method, manufacturing method and device are provided. The micro-LED transfer method comprises: obtaining a laser-transparent carrier substrate having a first surface and a second surface with micro-LEDs; forming a protection layer on at least one of the first surface and the second surface and a third surface of a receiving substrate, wherein the third surface is to receive the micro-LEDs to be transferred via pads; bringing the micro-LEDs to be transferred into contact with the pads on the third surface; and irradiating the micro-LEDs to be transferred with laser from the first surface to lift-off the micro-LEDs to be transferred from the carrier substrate wherein the protection layer configured to protect the third surface from the irradiation of the laser.
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