公开(公告)号：US20230163238A1

公开(公告)日：2023-05-25

申请号：US18155681

申请日：2023-01-17

Applicant: Google LLC

Inventor： Benjamin Leung ,  Miao-Chan Tsai ,  Sheila Hurtt ,  Gang He ,  Michael Joseph Cich ,  Aurelien Jean Francois David

IPC: H01L33/06 ,  H01L27/15

CPC classification number: H01L33/06 ,  H01L27/156

Abstract: In a general aspect, an LED structure may include regrown p-type layers and have a mesa structure formed on a substrate. The mesa structure may include preparation layers, an active multiple quantum well (MQW) structure, a first electron blocking layer (EBL), and one or more first p-type layers stacked in a c-plane direction. The sidewalls of the mesa may be substantially vertical or may exhibit a sloped profile. A second EBL may be conformally deposited over the mesa structure, followed by one or more second p-type layers deposited over the conformal second EBL layer. The second EBL and/or second p-type layer(s) deposited over the mesa structure may be referred to herein as regrown layers.

公开(公告)号：US20240413266A1

公开(公告)日：2024-12-12

申请号：US18742543

申请日：2024-06-13

Applicant: GOOGLE LLC

Inventor： Ying-Lan Chang ,  Benjamin Leung ,  Miao-Chan Tsai ,  Richard Peter Schneider, JR. ,  Sheila Hurtt ,  Gang He

IPC: H01L33/06 ,  H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46

Abstract: A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.

公开(公告)号：US20240120446A1

公开(公告)日：2024-04-11

申请号：US18482554

申请日：2023-10-06

Applicant: Google LLC

Inventor： Benjamin Leung ,  Miao-Chan Tsai ,  Sheila Hurtt ,  Gang He ,  Richard Peter Schneider, JR.

IPC: H01L33/32 ,  G02B3/04 ,  G02B27/30 ,  H01L33/00 ,  H01L33/18 ,  H01L33/60

CPC classification number: H01L33/325 ,  G02B3/04 ,  G02B27/30 ,  H01L33/0008 ,  H01L33/18 ,  H01L33/60

Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

公开(公告)号：US11784288B2

公开(公告)日：2023-10-10

申请号：US16661361

申请日：2019-10-23

Applicant: Google LLC

Inventor： Benjamin Leung ,  Miao-Chan Tsai ,  Sheila Hurtt ,  Gang He ,  Richard Peter Schneider, Jr.

IPC: H01L33/32 ,  G02B3/04 ,  G02B27/30 ,  H01L33/00 ,  H01L33/18 ,  H01L33/60

CPC classification number: H01L33/325 ,  G02B3/04 ,  G02B27/30 ,  H01L33/0008 ,  H01L33/18 ,  H01L33/60

Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

公开(公告)号：US11637219B2

公开(公告)日：2023-04-25

申请号：US16841119

申请日：2020-04-06

Applicant: GOOGLE LLC

Inventor： Gang He ,  Sheila Hurtt

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32

Abstract: The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.