公开(公告)号：US20060003491A1

公开(公告)日：2006-01-05

申请号：US11153750

申请日：2005-06-14

申请人： Goon-Woo Kim ,  Heui-Seog Kim ,  Jong-Keun Jeon ,  Wha-Su Sin ,  Jong-Ung Lee

发明人： Goon-Woo Kim ,  Heui-Seog Kim ,  Jong-Keun Jeon ,  Wha-Su Sin ,  Jong-Ung Lee

IPC分类号： H01L21/44

CPC分类号： H01L21/67132

摘要： An apparatus and method for ejecting a thin IC chip from a UV-sensitive tape attached to a bottom face of a semiconductor wafer, includes a vacuum holder that partly supports the UV-sensitive tape by applying vacuum force. The apparatus further includes an ejecting block inserted in the vacuum holder and configured to move vertically relative to the vacuum holder, and a plurality of ejecting pins inserted in the ejecting block and configured to move vertically and elastically. The ejecting pins move upward from the ejecting block driven by a pin-driving plate, detaching the IC chip from the UV-sensitive tape. Then the ejecting block moves upward from the vacuum holder driven by a block-driving shaft, applying a pressure to the bottom face of the IC chip.

摘要翻译： 从安装在半导体晶片底面的紫外线敏感胶带排出薄IC芯片的装置和方法包括通过施加真空力部分地支撑UV敏感胶带的真空支架。 所述装置还包括插入所述真空保持器中并被配置为相对于所述真空保持件垂直移动的排出块，以及插入所述排出块中并被构造成垂直和弹性移动的多个排出销。 排出销从由销驱动板驱动的排出块向上移动，将IC芯片从紫外线敏感胶带分离。 然后，排出块从由块驱动轴驱动的真空保持器向上移动，向IC芯片的底面施加压力。

公开(公告)号：US20070052094A1

公开(公告)日：2007-03-08

申请号：US11431084

申请日：2006-05-10

申请人： Goon-Woo Kim ,  Man-Hee Han ,  Jae-Hong Kim ,  Heui-Seog Kim ,  Sang-Jun Kim ,  Wha-Su Sin

发明人： Goon-Woo Kim ,  Man-Hee Han ,  Jae-Hong Kim ,  Heui-Seog Kim ,  Sang-Jun Kim ,  Wha-Su Sin

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/0508 ,  H01L2224/051 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/13024 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/3011 ,  H01L2924/00014

摘要： A semiconductor chip package may include one or more conductive patterns provided on a front surface of a wafer. An encapsulation layer may cover at least the front surface of the wafer. Chip plugs may be electrically connected to the conductive patterns, and may be embedded in a rear surface of the wafer. External connection terminals may be electrically connected to the chip plugs, and may be provided on the rear surface of the wafer.

摘要翻译： 半导体芯片封装可以包括设置在晶片的前表面上的一个或多个导电图案。 封装层可以至少覆盖晶片的前表面。 芯片插头可以电连接到导电图案，并且可以嵌入在晶片的后表面中。 外部连接端子可以电连接到芯片插头，并且可以设置在晶片的后表面上。

公开(公告)号：US20120108035A1

公开(公告)日：2012-05-03

申请号：US13228966

申请日：2011-09-09

申请人： Goon-Woo Kim ,  Heui-Seog Kim ,  Dong-Chun Lee ,  Jeong-sam Lee ,  Sung-Soo Lee

发明人： Goon-Woo Kim ,  Heui-Seog Kim ,  Dong-Chun Lee ,  Jeong-sam Lee ,  Sung-Soo Lee

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  H01L21/67092 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/11

摘要： A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface of the loaded semiconductor wafer by irradiating a second laser onto the top surface, and a reforming region is formed in the loaded semiconductor wafer under the groove by irradiating a first laser through wafer chuck and bottom surface of the semiconductor wafer into a region in which the first laser is focused. The semiconductor wafer is unloaded from the wafer chuck. The bottom surface of the semiconductor wafer is ground to decrease a thickness of the semiconductor wafer. The semiconductor wafer is separated along the groove and the reforming region, thereby forming a plurality of unit chips.

摘要翻译： 制造半导体器件的方法包括制备具有顶表面和底表面的半导体晶片。 将半导体晶片装载到晶片卡盘上，并且加载的半导体晶片的底表面面向晶片卡盘。 通过将第二激光照射在顶面上，在负载的半导体晶片的顶面形成有槽，通过将晶片卡盘的第一激光照射到晶片卡盘的下表面， 半导体晶片进入第一激光器聚焦的区域。 半导体晶片从晶片卡盘卸载。 研磨半导体晶片的底面以减小半导体晶片的厚度。 半导体晶片沿着沟槽和重整区域分离，从而形成多个单元芯片。