Laser diode arrays with close beam offsets
    1.
    发明授权
    Laser diode arrays with close beam offsets 失效
    具有近光束偏移的激光二极管阵列

    公开(公告)号:US5631918A

    公开(公告)日:1997-05-20

    申请号:US156222

    申请日:1993-11-22

    CPC分类号: H01S5/4025 H01S5/4043

    摘要: The present invention concerns laser diode arrays having an accurately spaced offset in the laser beams emanating from their respective laser stripes, and methods of their manufacture. The first method involves the mounting of at least two laser diodes on a submount such that the axes of the laser stripes between the two respective diodes are accurately spaced. The second method concerns the placement of a position mark on each diode at a accurate distance from the axis of the laser stripe such that the mark is easily detectable from a side view. The two diodes are then mounted with the axes of their laser stripes accurately spaced from the relative positioning of the position marks. The third method concerns the manufacture of laser diodes whose laser stripe axes are accurately spaced from at least one side edge of the diodes. The array of diodes is constructed such that the laser stripe axes are accurately spaced from each other relative to the side edges of accurate distance from their respective axes.

    摘要翻译: 本发明涉及在从它们各自的激光条发出的激光束中具有精确间隔的偏移的激光二极管阵列及其制造方法。 第一种方法涉及在底座上安装至少两个激光二极管,使得两个相应二极管之间的激光条纹的轴线被精确地间隔开。 第二种方法涉及在距离激光条的轴线的准确距离处在每个二极管上放置位置标记,使得从侧视图可以容易地检测标记。 然后安装两个二极管,其激光条的轴线与位置标记的相对定位精确地间隔开。 第三种方法涉及激光二极管的制造,其激光条纹轴与二极管的至少一个侧边缘精确地间隔开。 二极管阵列被构造成使得激光条纹轴线相对于侧边缘彼此精确地相距离其相应轴线的准确距离。

    Wavelength tuning of quantum well heterostructure lasers using an
external grating
    4.
    发明授权
    Wavelength tuning of quantum well heterostructure lasers using an external grating 失效
    使用外部光栅的量子阱异质结构激光器的波长调谐

    公开(公告)号:US4589115A

    公开(公告)日:1986-05-13

    申请号:US530555

    申请日:1983-09-09

    摘要: The method of and apparatus for tuning the wavelength using an external diffraction grating is accomplished with a quantum well injection laser wherein the range of operating wavelength selection is extended beyond the expectations of wavelength selection in fundamental emission spectrum of conventional bulk-crystal heterostructure lasers to include wavelength selection at the multiple carrier recombination transition energies possible in the conduction band sub-bands and valence band sub-bands present in quantum well heterostructures of single or multiple quantum well lasers. Quantum well heterostructure lasers have a unique advantage over previous tuned semiconductor lasers, as exemplified in the previously cited prior art, in that the active region of the quantum well laser can be bandfilled to well above the bulk crystal band edge at moderate current densities indicative of excellent candidates for broad band tuning through a wide range of the quantum well sub-bands of the quantum well structure.

    摘要翻译: 使用外部衍射光栅调谐波长的方法和装置通过量子阱注入激光器实现,其中工作波长选择的范围被扩展到常规体晶体异质结构激光器的基本发射光谱中的波长选择的期望以包括 在单载波或多个量子阱激光器的量子阱异质结构中存在的导带子带和价带子带中的多载波复合跃迁能量处的波长选择。 量子阱异质结构激光器具有优于之前调谐的半导体激光器的独特优点,如先前引用的现有技术中所例示的那样,量子阱激光器的有源区域可以以适当的电流密度填充到阱晶体带边缘以上, 通过量子阱结构的量子阱子带的宽范围宽带调谐的优秀候选者。