摘要:
The present invention concerns laser diode arrays having an accurately spaced offset in the laser beams emanating from their respective laser stripes, and methods of their manufacture. The first method involves the mounting of at least two laser diodes on a submount such that the axes of the laser stripes between the two respective diodes are accurately spaced. The second method concerns the placement of a position mark on each diode at a accurate distance from the axis of the laser stripe such that the mark is easily detectable from a side view. The two diodes are then mounted with the axes of their laser stripes accurately spaced from the relative positioning of the position marks. The third method concerns the manufacture of laser diodes whose laser stripe axes are accurately spaced from at least one side edge of the diodes. The array of diodes is constructed such that the laser stripe axes are accurately spaced from each other relative to the side edges of accurate distance from their respective axes.
摘要:
Nonmonolithic laser arrays having a plurality of lasing elements mounted on one or more spacers which protrude from a thermally conductive support. The spacers ensure the accurate location and separation of the lasing elements, facilitate the orientation of the output laser beams, and enable low thermal, optical, and electrical cross-talk between the lasing elements.
摘要:
Nonmonolithic laser arrays having lasing elements mounted on a composite support that enables accurate positioning and separation of the lasing elements, and that enables low thermal, optical, and electrical cross-talk. The support includes a low thermal diffusivity region surrounded by high thermal diffusivity regions which have defined mounting surfaces onto which the lasing elements mount. Heat generated in the lasing elements is conducted away by the high thermal diffusivity regions, while the low thermal diffusivity region reduces thermal cross-talk between the lasing elements. Beneficially, the support assists current flow to (or from) the lasing elements.
摘要:
In situ geometrical and stoichiometric properties of deposited films are brought about by employing a scanned irradiation source directed to a spot which is scanned across the growth surface in a chemical vaGOVERNMENT RIGHTSThe Government has certain rights in this invention pursuant to Contract No. 86F173100 awarded by the Defense Advanced Research Projects Agency (DARPA).
摘要:
An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of AlInP, GaInP and AlGaInP heterostructures. Several techniques for reducing parasitic leakage current via the n-type IILD regions, are described. These include removing the upper portions of the material outside the laser stripe, which can be accomplished by wet or dry etching of the material in a self-aligned manner. As an alternative, after formation of the waveguide, appropriately doped layers are grown over the disordered and as-grown regions of the structure to contact the active waveguide and simultaneously block parasitic shunt current from the disordered regions. Another method provides shallow inset insulating regions to replace the n-type disordered regions at the vicinity of a cap layer used to reduce a current barrier.
摘要:
An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
摘要:
A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.
摘要:
A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
摘要:
The optical path length of a raster output scanning (ROS) system is minimized by the use of a laser beam source for emitting a light beam with an enlarged divergence ratio. A super-elliptic light source beam with at least an 8:1 elliptic ratio of the major cross-scan axis to the minor scan axis will minimize the optical path length of a raster output scanning (ROS) system. The large divergence ratio of the super-elliptic light beam reduces the required focal lengths in the ROS optics while maintaining the desired numerical apertures and high energy throughput.
摘要:
In a method and apparatus for raster scanning optical output device, such as a laser printer or the like, an array of independently addressable light emitting devices, such as an array of solid state lasers, is used to control spot position on an image plane in the slow scan direction. The array is disposed such that the spots emitted from each element of the array impinge the image plane displaced in the slow scan direction from one another. The total distance between all the spots is less than the distance between fast scan direction scan lines. Only a single element of the array is operated per scan line, thus only a single spot is formed on the image plane per scan line. Control of which of the elements of the array emits a light beam per scan line allows control of the spot position in the slow scan direction for that scan line.