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公开(公告)号：US20080273825A1
公开(公告)日：2008-11-06
申请号：US11885794
申请日：2006-03-09
IPC分类号： F16C35/06
CPC分类号： F16C33/1075 , F16C17/02
摘要： A sliding bearing, e.g. journal bearing, including at least two bearing elements the bearing surfaces of which are slidably supported with respect to each other. At least one of the surfaces is provided with a first type of cavity which may comprise a lubricating substance, the first type of cavity being defined by a specific range of geometric properties. At least one surface is provided with at least a second type of cavity which may comprise a lubricating surface, the second type of cavity being defined by geometric properties which are different from the geometric properties of the first type of cavity.
摘要翻译： 滑动轴承，例如 轴颈轴承，包括至少两个轴承元件，其轴承表面相对于彼此可滑动地支撑。 至少一个表面设置有可以包括润滑物质的第一类型的空腔，第一类型的空腔由特定范围的几何特性限定。 至少一个表面设置有至少第二类型的空腔，其可以包括润滑表面，第二类型的空腔由与第一类型的空腔的几何特性不同的几何特性限定。
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公开(公告)号：US08231277B2
公开(公告)日：2012-07-31
申请号：US11885794
申请日：2006-03-09
CPC分类号： F16C33/1075 , F16C17/02
摘要： A sliding bearing, such as a journal bearing, includes at least two bearing elements, the bearing surfaces of which are slidably supported with respect to each other. At least one of the surfaces is provided with a first type of cavity which may comprise a lubricating substance, the first type of cavity being defined by a specific range of geometric properties. At least one surface is provided with at least a second type of cavity which may comprise a lubricating surface, the second type of cavity being defined by geometric properties which are different from the geometric properties of the first type of cavity.
摘要翻译： 诸如轴颈轴承的滑动轴承包括至少两个轴承元件，其轴承表面相对于彼此可滑动地支撑。 至少一个表面设置有可以包括润滑物质的第一类型的空腔，第一类型的空腔由特定范围的几何特性限定。 至少一个表面设置有至少第二类型的空腔，其可以包括润滑表面，第二类型的空腔由与第一类型的空腔的几何特性不同的几何特性限定。
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3.发明申请公开(公告)号：US20080311027A1
公开(公告)日：2008-12-18
申请号：US11663795
申请日：2005-09-16
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
CPC分类号： C22B41/00 , C22B5/04 , Y02P10/212
摘要： The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
摘要翻译： 本发明涉及用于制造例如高纯度锗的制造方法。 红外光学，辐射探测器和电子设备。 通过使气体GeCl4与含有Zn，Na和Mg中的一种的液态金属M接触，将GeCl 4转化为Ge金属，由此得到含Ge的合金和金属氯化物，通过蒸发或撇去除去。 然后在高于金属M沸点的温度下纯化含Ge合金。该方法不需要复杂的技术，并且保留了GeCl4在最终的Ge金属中的高纯度，因为唯一的反应物是金属M，它可以 可以获得非常高的纯度等级并持续回收。
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5.发明授权Filler and floatability material - manufacturing process and tubular units that incorporate this material 失效填料和浮选材料 - 制造工艺和包含该材料的管状单元
公开(公告)号：US4963420A
公开(公告)日：1990-10-16
申请号：US49941
申请日：1987-05-15
申请人： Jacques Jarrin , Eric Robert
发明人： Jacques Jarrin , Eric Robert
IPC分类号： C08J9/32 , C08K7/00 , C08K7/16 , C08K7/22 , C08L9/00 , C08L23/00 , C08L23/02 , C08L101/00 , D07B1/20 , F16L9/19 , F16L11/133
CPC分类号： F16L9/19 , C08K7/22 , D07B1/20 , F16L11/133 , Y10T428/139 , Y10T428/2927 , Y10T428/2935
摘要： This invention concerns a new filler and floatability material as well as its manufacturing process.For instance, this new material can be used as a filler and floatability material (A) which separates tubes or cables (1,2) in a tubular unit that includes an external sheath (B) surrounding a harness of tubes or cables (1,2).In view of its make-up this material also participates in the thermal insulation of said tubes.The invention concerns also such tubular units which incorporate the new material.
摘要翻译： 本发明涉及一种新的填料和浮选材料及其制造方法。 例如，这种新材料可以用作填充物和浮选性材料（A），其将管或电缆（1,2）分离在管状单元中，管状单元包括围绕管或线缆束（1， 2）。 鉴于其化妆品，该材料还参与所述管的隔热。 本发明还涉及结合新材料的管状单元。
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6.发明授权Method and apparatus for determining the immersed surface area of one of the electrodes of an electro-chemical bath 失效用于确定电化学浴的一个电极的浸入表面积的方法和装置
公开(公告)号：US4129480A
公开(公告)日：1978-12-12
申请号：US862399
申请日：1977-12-20
申请人： Eric Robert
发明人： Eric Robert
CPC分类号： G01B7/32
摘要： The immersed surface area of one of the electrodes in a conventional electro-chemical bath is accurately determined, so that the bath may be operated at an optimium current density, to obtain high quality electro-plating or electro-polishing. The current density is measured as a certain amount of current over the immersed area of the electrode. For any given area, the current density may be varied by varying the current flow.The potential between the bath and the electrode of interest is measured when no current is being conducted through the bath. A short pulse of current is then passed through the bath from one electrode to the other; and immediately thereafter the potential between the bath and the electrode of interest is again measured. These two potentials are then compared, and the potential difference is used to determine the immersed surface area of the electrode of interest according to a mathematical relationship corresponding to such electro-chemical baths. The immersed surface area of the electrode of interest can also be determined by varying the pulse current amplitude and frequency to obtain a certain predetermined difference between the potential values, measured as described above. The pulse current amplitude and frequency are then used to determine the immersed surface area of the particular electrode according to another mathematical relationship corresponding to such electro-chemical baths.
摘要翻译： 准确地确定常规电化学浴中的一个电极的浸渍表面积，使得可以以最佳电流密度操作浴，以获得高质量的电镀或电抛光。 在电极的浸渍区域上测量电流密度为一定量的电流。 对于任何给定的区域，可以通过改变电流来改变电流密度。
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7.发明授权公开(公告)号：US07943109B2
公开(公告)日：2011-05-17
申请号：US11909353
申请日：2006-03-24
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
IPC分类号： C01B33/02
CPC分类号： H01L31/1804 , C01B33/033 , C01B33/037 , Y02E10/547 , Y02P70/521
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.
摘要翻译： 本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。 晶体硅太阳能电池。 通过使气态SiCU与液态Zn接触将SiCU转化为Si金属，从而得到分离的含Si的合金和Zn-氯化物。 然后在高于Zn沸点的温度下纯化含Si的合金。 该方法不需要复杂的技术，并且保留了SiCU对最终产物的高纯度，因为唯一的反应物是Zn，其可以以非常高的纯度等级获得并且连续再循环。
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公开(公告)号：US20050285048A1
公开(公告)日：2005-12-29
申请号：US10519552
申请日：2003-06-27
申请人： Christophe Cachoncinlle , Remi Dussart , Claude Fleurier , Jean-Michel Pouvesle , Eric Robert , Raymond Viladrosa
发明人： Christophe Cachoncinlle , Remi Dussart , Claude Fleurier , Jean-Michel Pouvesle , Eric Robert , Raymond Viladrosa
CPC分类号： H01J61/56 , H01J61/526
摘要： The invention concerns a radiation source, comprising an anode (2), a cathode (3), an electric discharge gap (4) between the anode (2) and the cathode (3) and a gas input conduit (30) in the discharge gap (4). The gas input conduit (30) is electrically connected to the anode and the cathode. The invention is characterized in that the gas input conduit (30) is supplied with gas by a gas supply conduit (32), designed to form between its portion (42) connected to the gas input conduit (30) and another of its portions connected to a fixed potential, an electric impedance such that it counters the generation of electric discharges inside the gas input conduit (30).
摘要翻译： 本发明涉及一种辐射源，包括阳极（2），阴极（3），阳极（2）和阴极（3）之间的放电间隙（4）和放电中的气体输入导管（30） 差距（4）。 气体输入导管（30）电连接到阳极和阴极。 本发明的特征在于，气体输入管道（30）由气体供应管道（32）供应气体，设计成在其连接到气体输入管道（30）的部分（42）与连接到气体输入管道（30）的其它部分 固定电位，电阻抗，使其对抗气体输入管道（30）内的放电产生。
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公开(公告)号：US06921474B2
公开(公告)日：2005-07-26
申请号：US10814912
申请日：2004-03-31
申请人： Joris Vandenhaute , Eric Robert
发明人： Joris Vandenhaute , Eric Robert
IPC分类号： C22B19/02 , C01G9/04 , C22B1/00 , C22B1/08 , C22B3/44 , C22B19/00 , C22B19/04 , C25C3/34 , C22C3/34
摘要： Process for the production of ZnCl2 from a Zn bearing primary and/or secondary material comprising the steps of reacting the Zn bearing material with a chlorinating agent such as Cl2 to convert metals into chlorides and vaporising the volatile components of the reaction product at a temperature between the melting point of said reaction product and the boiling point of ZnCl2, thereby recovering a Zn rich chlorinated melt, and thereafter distilling ZnCl2 from this Zn rich chlorinated melt, thereby recovering purified ZnCl2 and a Zn-depleted chlorinated melt.
摘要翻译： 从含Zn的初级和/或次级材料生产ZnCl 2的方法，包括使含Zn材料与氯化剂如Cl 2 2反应的步骤，以使 金属成为氯化物，并在反应产物的熔点和ZnCl 2沸点之间的温度下蒸发反应产物的挥发性组分，从而回收富锌的氯化熔体，然后蒸馏出ZnCl 从该富锌的氯化熔体中回收纯化的ZnCl 2和Zn-贫的氯化熔体。
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10.发明授权公开(公告)号：US07682593B2
公开(公告)日：2010-03-23
申请号：US11663795
申请日：2005-09-16
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
CPC分类号： C22B41/00 , C22B5/04 , Y02P10/212
摘要： The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
摘要翻译： 本发明涉及用于制造例如高纯度锗的制造方法。 红外光学，辐射探测器和电子设备。 通过使气体GeCl4与含有Zn，Na和Mg中的一种的液态金属M接触，将GeCl 4转化为Ge金属，由此得到含Ge的合金和金属氯化物，通过蒸发或撇去除去。 然后在高于金属M沸点的温度下纯化含Ge合金。该方法不需要复杂的技术，并且保留了GeCl4在最终的Ge金属中的高纯度，因为唯一的反应物是金属M，它可以 可以获得非常高的纯度等级并持续回收。
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