公开(公告)号：US07347612B2

公开(公告)日：2008-03-25

申请号：US11287128

申请日：2005-11-23

申请人： Guo-Han Yue ,  Wen-Wu Zhu ,  Jing Chen

发明人： Guo-Han Yue ,  Wen-Wu Zhu ,  Jing Chen

IPC分类号： F21V7/04

CPC分类号： G02B6/0055 ,  G02B6/0033 ,  G02B6/0086

摘要： A backlight module 200 is provided, which includes a light guide plate 22 and a nonspecular reflective device 28, 34. The light guide plate 22 has a light-incident surface 221, a light-emitting surface 223, and a bottom surface 222 opposite to the light-emitting surface 223. The nonspecular reflective device 28, 34 arranged on and within an elongate section of the bottom surface 222. The elongate section of the bottom surface 222 is proximate to or adjacent the light-incident surface 221 of the light guide plate 22. The backlight module 200 can also include a light source 21 and a reflective plate 23. The light source 21 is disposed facing the light-incident surface 221, and the reflective plate 23 is disposed below the bottom surface 222.

摘要翻译： 提供了背光模块200，其包括导光板22和非透镜反射装置28,34。 导光板22具有入射表面221，发光表面223和与发光表面223相对的底表面222。 布置在底表面222的细长部分之上和之内的非特异性反射装置28,34。 底表面222的细长部分靠近或邻近导光板22的光入射表面221。 背光模块200还可以包括光源21和反射板23。 光源21被配置为面对光入射表面221，并且反射板23设置在底表面222的下方。

公开(公告)号：US20060158903A1

公开(公告)日：2006-07-20

申请号：US11287128

申请日：2005-11-23

申请人： Guo-Han Yue ,  Wen-Wu Zhu ,  Jing Chen

发明人： Guo-Han Yue ,  Wen-Wu Zhu ,  Jing Chen

IPC分类号： F21V7/04

CPC分类号： G02B6/0055 ,  G02B6/0033 ,  G02B6/0086

摘要： A backlight module 200 is provided, which includes a light guide plate 22 and a nonspecular reflective device 28, 34. The light guide plate 22 has a light-incident surface 221, a light-emitting surface 223, and a bottom surface 222 opposite to the light-emitting surface 223. The nonspecular reflective device 28, 34 arranged on and within an elongate section of the bottom surface 222. The elongate section of the bottom surface 222 is proximate to or adjacent the light-incident surface 221 of the light guide plate 22. The backlight module 200 can also include a light source 21 and a reflective plate 23. The light source 21 is disposed facing the light-incident surface 221, and the reflective plate 23 is disposed below the bottom surface 222.

摘要翻译： 提供了背光模块200，其包括导光板22和非透镜反射装置28,34。 导光板22具有入射表面221，发光表面223和与发光表面223相对的底表面222。 布置在底表面222的细长部分之上和之内的非特异性反射装置28,34。 底表面222的细长部分靠近或邻近导光板22的光入射表面221。 背光模块200还可以包括光源21和反射板23。 光源21被配置为面对光入射表面221，并且反射板23设置在底表面222的下方。

公开(公告)号：USD1041427S1

公开(公告)日：2024-09-10

申请号：US29935427

申请日：2024-04-01

申请人： Jing Chen

设计人： Jing Chen

摘要： FIG. 1 is a front perspective view of a loose outlet fix plug, showing my new design;
FIG. 2 is a rear perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a rear view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.

公开(公告)号：USD986742S1

公开(公告)日：2023-05-23

申请号：US29869526

申请日：2023-01-03

申请人： Jing Chen

设计人： Jing Chen

摘要： FIG. 1 is a front and top perspective view of a cosmetic bottle, showing my new design;
FIG. 2 is a rear and bottom perspective view thereof;
FIG. 3 is a front elevation view thereof;
FIG. 4 is a rear elevation view thereof;
FIG. 5 is a left side elevation view thereof;
FIG. 6 is a right side elevation view thereof;
FIG. 7 is a top plan view thereof;
FIG. 8 is a bottom plan view thereof; and,
FIG. 9 is another perspective view thereof, shown in an alternative position.
The dashed lines in the figures illustrate portions of the cosmetic bottle that form no part of the claimed design.

公开(公告)号：US20140294818A1

公开(公告)日：2014-10-02

申请号：US14349550

申请日：2012-10-11

申请人： Jing Chen ,  Taro Hitosugi ,  Sumin Kang

发明人： Jing Chen ,  Taro Hitosugi ,  Sumin Kang

IPC分类号： C07C311/29 ,  A61K45/06 ,  C07K16/40 ,  A61K31/18

CPC分类号： C07C311/29 ,  A61K31/18 ,  A61K45/06 ,  C07C2603/24 ,  C07K16/40 ,  C07K2317/34 ,  C09B1/06 ,  C09B1/12

摘要： In certain embodiments, the disclosure relates to methods of treating or preventing a PGAM1 mediated condition such as cancer or tumor growth comprising administering an effective amount of PGAM1 inhibitor, for example, an anthracene-9,10-dione derivative to a subject in need thereof. In certain embodiments, the disclosure relates to methods of treating or preventing cancer, such as lung cancer, head and neck cancer, and leukemia, comprising administering a therapeutically effective amount of a pharmaceutical composition comprising a compound disclosed herein or pharmaceutically acceptable salt to a subject in need thereof.

摘要翻译： 在某些实施方案中，本公开涉及治疗或预防PGAM1介导的病症如癌症或肿瘤生长的方法，包括向有需要的受试者施用有效量的PGAM1抑制剂，例如蒽-9,10-二酮衍生物 。 在某些实施方案中，本公开涉及治疗或预防癌症的方法，例如肺癌，头颈癌和白血病，包括向受试者施用治疗有效量的包含本文公开的化合物或药学上可接受的盐的药物组合物 需要它。

公开(公告)号：US08502323B2

公开(公告)日：2013-08-06

申请号：US12185241

申请日：2008-08-04

申请人： Jing Chen

发明人： Jing Chen

IPC分类号： H01L21/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

摘要： A field-effect transistor includes a first gate, a second gate held at a substantially fixed potential in a cascode configuration, and a semiconductor channel. The semiconductor channel has an enhancement mode portion and a depletion mode portion. The enhancement mode portion is gated to be turned on and off by the first gate, and has been modified to operate in enhancement mode. The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.

摘要翻译： 场效应晶体管包括第一栅极，保持在共源共栅配置中基本上固定的电位的第二栅极和半导体沟道。 半导体通道具有增强模式部分和耗尽模式部分。 增强模式部分通过第一门选通和导通，并被修改为在增强模式下工作。 耗尽模式部分由第二栅极选通，并且已被修改为在耗尽模式下工作，并且可操作地屏蔽第一栅极免受电压应力。

公开(公告)号：US20130092958A1

公开(公告)日：2013-04-18

申请号：US13699296

申请日：2010-09-08

申请人： Jing Chen ,  Li Yuan ,  Hongwei Chen ,  Chunhua Zhou

发明人： Jing Chen ,  Li Yuan ,  Hongwei Chen ,  Chunhua Zhou

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/16

CPC分类号： H01L29/1608 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/872 ,  H01L29/88 ,  H01L2224/06181 ,  H01L2924/12032 ,  H01L2924/13062 ,  H01L2924/00

摘要： Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect, metal-2DEG Schottky tunnel junctions can be employed in group III-Nitride field-effect devices that enable normally-off operation, large breakdown voltage, low leakage current, and high on/off current ratio. As a further advantage, AlGaN/GaN metal-2DEG TJ-FETs are disclosed that can be fabricated in a lateral configuration and/or a vertical configuration. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.

摘要翻译： 提供了用于产生异质结AlGaN / GaN金属二维电子气（2DEG）隧道结场效应晶体管（TJ-FET）的结构，器件和方法。 在一方面，金属2DEG肖特基隧道结可以用于能够进行常关断操作，大的击穿电压，低漏电流和高导通/截止电流比的III-N型氮化物场效应器件中。 作为另外的优点，公开了可以以横向配置和/或垂直配置制造的AlGaN / GaN金属2DEG TJ-FET。 提供了另外的非限制性实施例，其示出了所公开的结构的优点和灵活性。

公开(公告)号：US20130054210A1

公开(公告)日：2013-02-28

申请号：US13696455

申请日：2011-09-25

申请人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Zhan Chai ,  Xi Wang

发明人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Zhan Chai ,  Xi Wang

IPC分类号： G06F17/10

CPC分类号： G01R31/2628 ,  G01R31/2603 ,  G06F17/5036

摘要： The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model.

摘要翻译： 本发明提供了一种用于确定BSIMSOI4直流（DC）模型参数的方法，其中，体内引出结构和不同尺寸的多个金属氧化物半导体场效应晶体管（MOSFET）器件和多个MOSFET器件 提供浮动结构和不同尺寸; 所有MOSFET器件的Id-Vg-Vp，Id / Ip-Vd-Vg，Ig-Vg-Vd，Ig-Vp，Ip-Vg-vd，Is / Id-Vp和Id / Ip-Vp-Vd特性 测量浮体结构的所有MOSFET器件的体导体结构和Id-Vg-Vp，Id-Vd-Vg和Ig-Vg-Vd特性; 获得不具有体引出结构的每个MOSFET器件和浮置结构的每个MOSFET器件的自发热效应的电性能曲线; 然后根据具体步骤依次提取BSIMSOI4模型的DC参数。 在本发明中，根据模型方程依次选择适当的试验曲线，并连续确定各种参数，从而准确有效地提取BSIMSOI4型号的直流参数。

公开(公告)号：US08373533B2

公开(公告)日：2013-02-12

申请号：US12851237

申请日：2010-08-05

申请人： Han Li ,  Gang Liu ,  Jing Chen ,  Jinfa Zhang

发明人： Han Li ,  Gang Liu ,  Jing Chen ,  Jinfa Zhang

IPC分类号： H01F27/29

CPC分类号： H05K7/1432 ,  H01F27/292 ,  H01F2027/408 ,  H02M3/33592 ,  Y02B70/1475

摘要： A power module includes a first bobbin, a primary winding coil, a circuit board assembly and a first magnetic core assembly. The primary winding coil is wound around the first bobbin. The circuit board assembly includes a printed circuit board, a second winding structure, at least one current-sensing element, a rectifier circuit and an electrical connector. The second winding structure has an output terminal. The current-sensing element includes a first conductor. The first conductor is a conductive sheet. A first end of the first conductor is in contact with the output terminal of the second winding structure. A second end of the first conductor is connected to the rectifier circuit. The primary winding coil is aligned with the second winding structure of the circuit board assembly and arranged within the first magnetic core assembly. The primary winding coil and the electrical connector are electrically connected with a system board.

摘要翻译： 功率模块包括第一线圈架，初级绕组线圈，电路板组件和第一磁芯组件。 初级绕组线圈缠绕在第一线轴上。 电路板组件包括印刷电路板，第二绕组结构，至少一个电流感测元件，整流器电路和电连接器。 第二绕组结构具有输出端子。 电流检测元件包括第一导体。 第一导体是导电片。 第一导体的第一端与第二绕组结构的输出端接触。 第一导体的第二端连接到整流电路。 初级绕组线圈与电路板组件的第二绕组结构对准并且布置在第一磁芯组件内。 初级绕组线圈和电连接器与系统板电连接。

公开(公告)号：US08264042B2

公开(公告)日：2012-09-11

申请号：US12810574

申请日：2010-02-11

申请人： Deyuan Xiao ,  Xi Wang ,  Miao Zhang ,  Jing Chen ,  Zhong Ying Xue

发明人： Deyuan Xiao ,  Xi Wang ,  Miao Zhang ,  Jing Chen ,  Zhong Ying Xue

IPC分类号： H01L27/12

CPC分类号： H01L29/78696 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L29/42392

摘要： A hybrid orientation accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Si(110) and n-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device results in high carrier mobility. Meanwhile polysilicon gate depletion and short channel effects are prevented, and threshold voltage is increased.

摘要翻译： 混合取向累积模式GAA（Gate-All-Around）CMOSFET包括具有第一通道的PMOS区域，具有第二通道的NMOS区域和栅极区域。 第一通道和第二通道具有跑道形横截面并分别由p型Si（110）和n型Si（100）形成; 第一通道和第二通道的表面基本上被栅极区域包围; 在PMOS区域和NMOS区域之间以及在PMOS或NMOS区域和Si衬底之间设置掩埋氧化物层以将它们彼此隔离。 根据本发明的装置结构相当简单，紧凑且高度集成。 在积累模式中，电流流过整个跑道状通道。 所公开的装置导致高载流子迁移率。 同时防止多晶硅栅极耗尽和短沟道效应，并且阈值电压增加。