公开(公告)号：US06436809B1

公开(公告)日：2002-08-20

申请号：US09645615

申请日：2000-08-25

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KlO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group comprising HF, NH4OH, H3PO4, H2SO4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

公开(公告)号：US06200414B1

公开(公告)日：2001-03-13

申请号：US09294362

申请日：1999-04-20

申请人： Kyung-seuk Hwang ,  Gyu-hwan Kwag ,  Young-hwan Yun

发明人： Kyung-seuk Hwang ,  Gyu-hwan Kwag ,  Young-hwan Yun

IPC分类号： C23F102

CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/6708

摘要： A circulation system for supplying one or more chemicals, or mixtures thereof, includes a chemical tank containing the chemical. A chemical supply line is connected at one end to the chemical tank, through which the chemical from the chemical tank is supplied to one of a processing section, for performing a specific semiconductor device fabrication process, and a bypass section, for collecting the chemical while the processing section is idle. A supply nozzle, connected to another end of the chemical supply line, is movable between the processing section and the bypass section, such that the supply nozzle is selectively oriented above one of the processing section and the bypass section. A primary chemical re-circulation line connects the processing section and the chemical tank, and a chemical bypass line connects the bypass section and a portion of the primary chemical re-circulation line.

摘要翻译： 用于供应一种或多种化学品或其混合物的循环系统包括含有该化学品的化学罐。 化学品供应管线一端连接到化学罐，化学罐的化学物质通过该药液供应给处理部分之一，用于执行特定的半导体器件制造工艺，旁路部分用于收集化学品，同时 处理部分空闲。 连接到化学供应管线的另一端的供应喷嘴可在处理部分和旁路部分之间移动，使得供应喷嘴选择性地定向在处理部分和旁路部分之一上。 主要化学品循环管线连接处理部分和化学罐，化学旁路管线连接旁路部分和主要化学品再循环管线的一部分。

公开(公告)号：US06232228B1

公开(公告)日：2001-05-15

申请号：US09325389

申请日：1999-06-04

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L2144

CPC分类号： C09K13/04 ,  H01L21/3212 ,  H01L21/7684

摘要： A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KIO3, H5IO6, KOH and HNO3, at least enhancer selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl, and a buffer solution, mixed together in certain amounts.

摘要翻译： 提供一种制造半导体器件的方法，包括形成导电插塞并使层间绝缘层的阶梯高度最小化。 还提供了用于这种制造方法的蚀刻组合物。 制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在绝缘层上形成导电层以埋入接触孔，旋转半导体衬底，并蚀刻导电 通过在旋转半导体衬底上提供蚀刻组合物，并且使用蚀刻组合物旋转蚀刻钨层，使得导电层仅保留在接触孔内部，并且不保留在绝缘层上。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少选自HF，NH 4 OH，H 3 PO 4，H 2 SO 4，NH 4 F和HCl的增强剂， 缓冲溶液，以一定量混合在一起。

公开(公告)号：US06197150B1

公开(公告)日：2001-03-06

申请号：US09320139

申请日：1999-05-26

申请人： Gyu-hwan Kwag ,  Kyung-seuk Hwang

发明人： Gyu-hwan Kwag ,  Kyung-seuk Hwang

IPC分类号： H01L2100

CPC分类号： H01L21/67017 ,  H01L21/67023

摘要： An apparatus is provided for wafer treatment during the manufacture of semiconductor devices. The apparatus for wafer treatment includes a shaft, a chuck supported by the shaft for holding a wafer to be treated, a solution nozzle for supplying a treatment solution for wafer treatment onto the wafer, a gas supplier for supplying a gas to the back side of the wafer, and a heater for heating the gas supplied to the back side of the wafer. The use of this apparatus improves the uniformity of a treatment process such as an etching process or a cleaning process by minimizing the temperature changes of the treatment solution supplied onto the wafer mounted on the spin chuck of the apparatus during the wafer treatment process.

摘要翻译： 在半导体器件的制造期间提供用于晶片处理的装置。 用于晶片处理的装置包括轴，用于保持待处理的晶片的轴支撑的卡盘，用于将晶片处理的处理溶液供应到晶片上的溶液喷嘴，用于向晶片的背面供应气体的气体供应器 晶片和用于加热供应到晶片背面的气体的加热器。 该设备的使用通过最小化在晶片处理过程中将安装在装置的旋转卡盘上的晶片上的处理溶液的温度变化降至最低，从而提高了诸如蚀刻工艺或清洗工艺的处理过程的均匀性。

公开(公告)号：US6140233A

公开(公告)日：2000-10-31

申请号：US109922

申请日：1998-07-02

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： C09K13/04 ,  H01L21/321 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

公开(公告)号：US06232239B1

公开(公告)日：2001-05-15

申请号：US09141207

申请日：1998-08-26

申请人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

发明人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

IPC分类号： H01L21338

CPC分类号： H01L21/76804 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

摘要： A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.

摘要翻译： 一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。 该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤 的去离子水。 这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。