公开(公告)号：US06200414B1

公开(公告)日：2001-03-13

申请号：US09294362

申请日：1999-04-20

申请人： Kyung-seuk Hwang ,  Gyu-hwan Kwag ,  Young-hwan Yun

发明人： Kyung-seuk Hwang ,  Gyu-hwan Kwag ,  Young-hwan Yun

IPC分类号： C23F102

CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/6708

摘要： A circulation system for supplying one or more chemicals, or mixtures thereof, includes a chemical tank containing the chemical. A chemical supply line is connected at one end to the chemical tank, through which the chemical from the chemical tank is supplied to one of a processing section, for performing a specific semiconductor device fabrication process, and a bypass section, for collecting the chemical while the processing section is idle. A supply nozzle, connected to another end of the chemical supply line, is movable between the processing section and the bypass section, such that the supply nozzle is selectively oriented above one of the processing section and the bypass section. A primary chemical re-circulation line connects the processing section and the chemical tank, and a chemical bypass line connects the bypass section and a portion of the primary chemical re-circulation line.

摘要翻译： 用于供应一种或多种化学品或其混合物的循环系统包括含有该化学品的化学罐。 化学品供应管线一端连接到化学罐，化学罐的化学物质通过该药液供应给处理部分之一，用于执行特定的半导体器件制造工艺，旁路部分用于收集化学品，同时 处理部分空闲。 连接到化学供应管线的另一端的供应喷嘴可在处理部分和旁路部分之间移动，使得供应喷嘴选择性地定向在处理部分和旁路部分之一上。 主要化学品循环管线连接处理部分和化学罐，化学旁路管线连接旁路部分和主要化学品再循环管线的一部分。

公开(公告)号：US06732750B2

公开(公告)日：2004-05-11

申请号：US09832330

申请日：2001-04-11

申请人： Yong-joon Cho ,  Seung-kun Lee ,  Young-hwan Yun ,  Gyu-hwan Kwag

发明人： Yong-joon Cho ,  Seung-kun Lee ,  Young-hwan Yun ,  Gyu-hwan Kwag

IPC分类号： B08B300

CPC分类号： H01L21/67034 ,  B08B3/02 ,  Y10S134/902

摘要： A semiconductor wafer cleaning apparatus and method uses only one inner bath for chemical solution and de-ionized water cleaning, and includes a marangoni dryer for cleaning and drying semiconductor wafers. The apparatus includes a loading unit loaded with a cassette holding wafers; a moving mechanism for extracting the wafers from the cassette and moving the wafers into a loader; an inner bath for cleaning the wafers with a chemical solution or de-ionized water; a marangoni dryer including a hood, for moving the wafers from the loader into the bath, to be sealed to the bath; and a knife for supporting the wafers loaded into the bath at a lower portion thereof and moving the wafers up and down. Since the marangoni dryer is adhered to the bath during drying, the wafers are not affected by laminar flow or exhaustion and water marks do not occur thereon.

摘要翻译： 半导体晶片清洁装置和方法仅使用一个用于化学溶液和去离子水清洗的内浴，并且包括用于清洁和干燥半导体晶片的马龙戈尼干燥器。 该装置包括装载有保持晶片的盒的装载单元; 用于从所述盒中提取所述晶片并将所述晶片移动到装载器中的移动机构; 用于用化学溶液或去离子水清洗晶片的内浴; 包括用于将晶片从装载器移动到浴缸中的马拉热尼亚干燥器，以将其密封到浴中; 以及用于支撑在其下部装入浴中的晶片并且上下移动晶片的刀。 由于在干燥过程中将马龙戈尼干燥机附着在浴槽上，所以晶片不受层流或排气的影响，并且不会在其上发生水痕。

公开(公告)号：US06235147B1

公开(公告)日：2001-05-22

申请号：US09406887

申请日：1999-09-28

申请人： Seung-kun Lee ,  Jae-hyung Jung ,  Young-hwan Yun ,  Gyu-hwan Kwag

发明人： Seung-kun Lee ,  Jae-hyung Jung ,  Young-hwan Yun ,  Gyu-hwan Kwag

IPC分类号： B08B302

CPC分类号： H01L21/67086 ,  H01L21/6708

摘要： There is provided a wet-etching facility for manufacturing semiconductor devices, wherein the etching process is performed for a wafer with its used surface facing downward so that the by-products from the etching process are completely removed from the etching groove of the wafer by gravity, and the impurities on the back side of the wafer are sank down, and are not touched to the used surface of the other wafer thereby producing good quality of wafers. The wet-etching facility for manufacturing semiconductor devices comprises a bath containing an amount of chemical; a chemical supply part for supplying an amount of chemical to the bath; a chemical discharge part for discharging the chemical inside the bath to the outside; a wafer guide holding and fixing a wafer with its used surface facing downward, and placing the wafer into a chemical; a transfer robot for loading and unloading the wafer into the wafer guide; and a chemical spray part for spraying the chemical at a high pressure such that the chemical flows along a surface of the wafer.

摘要翻译： 提供了用于制造半导体器件的湿式蚀刻设备，其中对于其使用的表面朝下的晶片执行蚀刻处理，使得来自蚀刻工艺的副产物通过重力从晶片的蚀刻蚀刻槽完全去除 ，并且晶片背面的杂质沉没，并且不会接触另一晶片的使用表面，从而产生良好的晶片质量。用于制造半导体器件的湿式蚀刻设备包括含有一定量的 化学品 用于向浴提供一定量的化学品的化学品供应部件; 用于将浴内的化学物质排放到外部的化学物排放部分; 将晶片的使用面向下保持并固定的晶片导板，将晶片放入化学品中; 用于将晶片装载和卸载到晶片引导件中的传送机器人; 以及用于在高压下喷射化学品使化学品沿着晶片表面流动的化学喷涂部件。

公开(公告)号：US5827396A

公开(公告)日：1998-10-27

申请号：US773059

申请日：1996-12-24

申请人： Se-jong Ko ,  Pyeong-sik Jeon ,  Young-hwan Yun ,  Sang-young Moon

发明人： Se-jong Ko ,  Pyeong-sik Jeon ,  Young-hwan Yun ,  Sang-young Moon

IPC分类号： H01L21/683 ,  H01L21/00 ,  H01L21/306 ,  C23F1/00 ,  C03C25/06

CPC分类号： H01L21/67086 ,  H01L21/67075

摘要： A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.

摘要翻译： 用于制造半导体器件的湿式蚀刻装置包括电源，用于从电源传输电力的传输装置，以及用于使用来自发送的电源的电力来放置在处理槽中的晶片的顶部和底部位置的辊 由传动装置。 这里，加载期间晶片的初始顶部和底部位置在卸载之前被反转。 因此，晶片的整个表面在含有化学溶液的处理槽中花费等量的时间，因此可以被均匀地蚀刻。

公开(公告)号：US07476622B2

公开(公告)日：2009-01-13

申请号：US10712052

申请日：2003-11-14

申请人： Yong-joon Cho ,  Young-hee Kim ,  Young-hwan Yun ,  Doo-heun Baek

发明人： Yong-joon Cho ,  Young-hee Kim ,  Young-hwan Yun ,  Doo-heun Baek

IPC分类号： H01L21/302

CPC分类号： H01L27/10888 ,  H01L21/31133 ,  H01L21/76897

摘要： A gate is formed on a device formation region of a semiconductor substrate, and source and drain regions are formed in the device formation region of the semiconductor substrate adjacent respective sides of the gate. The gate is formed to include a gate dielectric layer, a gate conductive layer and sidewall spacers located at respective sidewalls of the gate conductive layer. An etch stop layer is formed over the source region, the drain region and the sidewall spacers of the gate to obtain an intermediate structure, and a planarized first interlayer insulating film is formed over a surface of the intermediate structure. The first insulating layer is dry etched until the etch stop layer over the source region, the drain region and the sidewall spacers is exposed to form self-aligned contact holes in the first interlayer insulating over the source region and the drain region, respectively. The etch stop layer is then wet etched to remove the etch stop layer over the source region, the drain region and the sidewall spacers, and respective contact pads are formed by filling the self-aligned contact holes with conductive polysilicon.

摘要翻译： 栅极形成在半导体衬底的器件形成区域上，并且源极和漏极区域形成在与栅极的相应侧面相邻的半导体衬底的器件形成区域中。 栅极形成为包括栅极介电层，栅极导电层和位于栅极导电层的相应侧壁处的侧壁间隔物。 在栅极的源极区域，漏极区域和侧壁间隔物上形成蚀刻停止层以获得中间结构，并且在中间结构的表面上形成平坦化的第一层间绝缘膜。 干法蚀刻第一绝缘层，直到在源极区域，漏极区域和侧壁间隔物上的蚀刻停止层被暴露以分别在源极区域和漏极区域上的第一层间绝缘中形成自对准接触孔。 然后对蚀刻停止层进行湿式蚀刻以去除源极区域，漏极区域和侧壁间隔物上的蚀刻停止层，并且通过用导电多晶硅填充自对准接触孔来形成相应的接触焊盘。

公开(公告)号：US6059986A

公开(公告)日：2000-05-09

申请号：US144254

申请日：1998-08-31

申请人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

发明人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

IPC分类号： H01L21/306 ,  H01L21/00 ,  H01L21/304 ,  C23F1/02 ,  G05D23/00 ,  H05B1/00

CPC分类号： H01L21/67086 ,  H01L21/67057

摘要： A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

摘要翻译： 用于清洗和湿蚀半导体晶片的湿站装置包括用于保存化学溶液的化学容器，用于测量化学溶液的温度的温度测量装置，用于比较由温度测量装置测量的温度的温度控制单元 具有预定的参考温度值，并输出作为控制信号的结果，用于加热化学溶液的石英加热器，用于接收控制信号并调节供应到石英加热器的功率的电源控制器，以及连接到 电源控制器，用于接收加热启动信号和切换到石英加热器的电力，其中进一步提供加热器监控系统，用于监视石英加热器和电源控制器的运行状态，并通知操作者任何问题。

公开(公告)号：US6100203A

公开(公告)日：2000-08-08

申请号：US116790

申请日：1998-07-16

申请人： Joon-ing Kil ,  Pil-kwon Jun ,  Min-sang Yun ,  Young-hwan Yun ,  Gyu-hwan Kwack ,  Sang-moon Chon

发明人： Joon-ing Kil ,  Pil-kwon Jun ,  Min-sang Yun ,  Young-hwan Yun ,  Gyu-hwan Kwack ,  Sang-moon Chon

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/302

CPC分类号： H01L21/02071 ,  H01L21/02063

摘要： Aqueous cleaning compositions comprise from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol. Methods of manufacturing microelectronic devices comprise providing electrodes on insulation films on microelectronic substrates; etching the insulation films using the electrodes as etching masks to form an exposed surfaces on the electrodes; cleaning the exposed surfaces with aqueous cleaning compositions comprising from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol; and forming dielectric films on the exposed surfaces of the electrodes. The cleaning step and the etching step are carried out simultaneously.

摘要翻译： 水性清洁组合物包含约0.01至约10重量％的氟化氢; 约1至约10重量％的过氧化氢; 和约0.01至约30重量％的异丙醇。 制造微电子器件的方法包括在微电子衬底上的绝缘膜上提供电极; 使用电极蚀刻绝缘膜作为蚀刻掩模，以在电极上形成暴露表面; 用包含约0.01至约10重量％氟化氢的水性清洁组合物清洁暴露的表面; 约1至约10重量％的过氧化氢; 和约0.01至约30重量％的异丙醇; 以及在电极的暴露表面上形成电介质膜。 清洗步骤和蚀刻步骤同时进行。

公开(公告)号：US5715851A

公开(公告)日：1998-02-10

申请号：US506760

申请日：1995-07-26

申请人： Jae-hyung Jung ,  Young-hwan Yun ,  Ho-seung Chang

发明人： Jae-hyung Jung ,  Young-hwan Yun ,  Ho-seung Chang

IPC分类号： H01L21/673 ,  B08B3/12 ,  B08B11/02 ,  H01L21/00 ,  H01L21/304 ,  B08B3/10

CPC分类号： H01L21/67023 ,  B08B11/02 ,  B08B3/12 ,  Y10S134/902

摘要： A wafer cassette through which a sonic wave is evenly transferred to a substrate in a quartz bath, and a cleaning system adopting the wafer cassette are provided. In the wafer cassette, a hole for evenly transferring the sonic wave to the substrate is formed. The cleaning system includes a vibration plate for generating a sonic wave, placed at the lowest portion of the cleaning system, a sink placed on the vibration plate, a quartz bath placed in the sink and spaced from the bottom of the sink, in which a wafer cassette is placed, a plurality of water supplies for supplying a cleaning solution, placed in the bottom of the quartz bath and a water drain for draining the cleaning solution overflown from the quartz bath, placed on the bottom of the sink, opposite to the water supplies, wherein the vibration plate is placed between the water drain and the water supplies. As a result, the oscillation frequency does not deviate from the setting value and air bubbles are not formed at the lower portion of the quartz bath, so that the irregular reflection of the sonic wave is restricted. Thus, the sonic wave is evenly transferred to the wafer, thereby enhancing the capability of removing the particles from the substrate.

摘要翻译： 提供了将声波在石英槽中均匀地转移到基板的晶片盒，以及采用该晶片盒的清洁系统。 在晶片盒中，形成用于将声波均匀地传递到基板的孔。 清洁系统包括用于产生声波的振动板，放置在清洁系统的最低部分，放置在振动板上的水槽，放置在水槽中并与水槽底部间隔开的石英浴，其中 放置晶片盒，放置在石英池底部的多个用于供应清洗液的供水装置，以及放置在与水槽相对的水槽底部的用于排出从石英池溢出的清洗液的排水口 水源，其中振动板放置在排水口和水源之间。 结果，振荡频率并没有偏离设定值，并且在石英槽的下部没有形成气泡，从而限制了声波的不规则反射。 因此，声波被均匀地转移到晶片，从而增强了从基底去除颗粒的能力。

公开(公告)号：US5944939A

公开(公告)日：1999-08-31

申请号：US735454

申请日：1996-10-23

申请人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

发明人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

IPC分类号： H01L21/306 ,  H01L21/00 ,  H01L21/304 ,  C23F1/02

CPC分类号： H01L21/67086 ,  H01L21/67057

摘要： A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.