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    SEMICONDUCTOR PRODUCTION METHOD AND WAFER INSPECTION METHOD
    2.
    发明申请
    SEMICONDUCTOR PRODUCTION METHOD AND WAFER INSPECTION METHOD 审中-公开

    公开(公告)号：US20200258794A1

    公开(公告)日：2020-08-13

    申请号：US16631520

    申请日：2018-06-13

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomonori NAKAMURA ,  Motohiro SUYAMA ,  Hironori TAKAHASHI

    IPC: H01L21/66 ,  G01R31/311 ,  H01L31/18 ,  H01L31/08

    Abstract: There is provided a semiconductor manufacturing method capable of coping with an increase in the density of an integrated circuit.A semiconductor manufacturing method according to one aspect of the present invention includes: a step of forming a memory cell, a photodiode that outputs an electrical signal corresponding to an input optical signal, and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell, so as to correspond to each chip forming region of a wafer having a plurality of chip forming regions; a step of inputting pump light for checking an operation of the memory cell to the photodiode and inspecting an operation state of the memory cell after the forming step; and a step of performing dicing for each of the chip forming regions after the inspection step.

    SEMICONDUCTOR WAFER
    3.
    发明申请
    SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20200176339A1

    公开(公告)日：2020-06-04

    申请号：US16631507

    申请日：2018-06-13

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Motohiro SUYAMA ,  Hironori TAKAHASHI ,  Tomonori NAKAMURA

    IPC: H01L21/66 ,  G01R31/28 ,  H01L31/08

    Abstract: There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed outside each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

    ELECTRIC FIELD VECTOR DETECTION METHOD AND ELECTRIC FIELD VECTOR DETECTION DEVICE
    4.
    发明申请
    ELECTRIC FIELD VECTOR DETECTION METHOD AND ELECTRIC FIELD VECTOR DETECTION DEVICE 有权
    电场矢量检测方法和电场矢量检测装置

    公开(公告)号：US20160146666A1

    公开(公告)日：2016-05-26

    申请号：US14950617

    申请日：2015-11-24

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Yoichi KAWADA ,  Takashi YASUDA ,  Hironori TAKAHASHI

    IPC: G01J1/44 ,  G01J1/42 ,  G01J1/04 ,  G01J4/04

    CPC classification number: G01J1/44 ,  G01J1/0429 ,  G01J1/4228 ,  G01J3/0224 ,  G01J3/0262 ,  G01J3/42 ,  G01J3/433 ,  G01J3/4338 ,  G01J4/04 ,  G01J2001/4242 ,  G01N21/3581 ,  G01R15/241 ,  G01R29/0871

    Abstract: In this electric field vector detection method, an electro-optic crystal, where a (111) surface of an optical isotropic medium is cut out, is used as a terahertz wave detection element. The method includes: causing polarization of probe light of ultrashort pulsed light to be circular polarization; allowing the probe light having circular polarization to enter the terahertz wave detection element and probing the terahertz wave; modulating the probe light, having probed the terahertz wave, by a rotating analyzer and detecting the modulated probe light by a photodetector; performing lock-in detection of a detection signal from the photodetector by a lock-in detector using a frequency based on a rotational frequency of the rotating analyzer as a reference signal; and detecting an electric field vector of the terahertz wave based on a detection signal from the lock-in detector.

    Abstract translation: 在该电场矢量检测方法中，将光学各向同性介质的（111）面切出的电光晶体用作太赫兹波检测元件。 该方法包括：使超短脉冲光的探测光的极化成圆极化; 允许具有圆极化的探测光进入太赫兹波检测元件并探测太赫兹波; 通过旋转分析仪调制探测太赫兹波的探测器，并通过光电检测器检测调制的探测光; 通过锁定检测器使用基于旋转分析仪的旋转频率的频率作为参考信号来执行来自光电检测器的检测信号的锁定检测; 以及基于来自锁定检测器的检测信号检测太赫兹波的电场矢量。

    SEMICONDUCTOR WAFER
    5.
    发明申请
    SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号：US20200174074A1

    公开(公告)日：2020-06-04

    申请号：US16631528

    申请日：2018-06-13

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Motohiro SUYAMA ,  Hironori TAKAHASHI ,  Tomonori NAKAMURA

    IPC: G01R31/3185 ,  G01R31/317 ,  H01L23/00

    Abstract: There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed in each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

    TUNNEL CURRENT CONTROL APPARATUS AND TUNNEL CURRENT CONTROL METHOD
    6.
    发明申请
    TUNNEL CURRENT CONTROL APPARATUS AND TUNNEL CURRENT CONTROL METHOD 审中-公开

    公开(公告)号：US20190064210A1

    公开(公告)日：2019-02-28

    申请号：US16108447

    申请日：2018-08-22

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Yoichi KAWADA ,  Hironori TAKAHASHI ,  Jun TAKEDA ,  Ikufumi KATAYAMA ,  Yusuke ARASHIDA ,  Katsumasa YOSHIOKA

    IPC: G01Q60/16 ,  G01Q10/04

    Abstract: A tunnel current control apparatus includes a light source, a branching unit, a chopper, an optical path difference adjustment unit, a polarizer, a terahertz wave generation element, a CEP adjustment unit, a terahertz wave detection element, a quarter-wave plate, a polarization separation element, photodetectors, a differential amplifier, a lock-in amplifier, a current measurement unit, a processing unit, mirrors, and off-axis parabolic mirrors. The CEP adjustment unit can arbitrarily adjust a CEP of a terahertz wave pulse. The processing unit obtains a conversion filter used for conversion from an electric field waveform of a far field of the terahertz wave pulse to an electric field waveform of a near field based on a tunnel current measured by the current measurement unit and a correlation detected by the terahertz wave detection element.

    OPTICAL ELEMENT
    8.
    发明申请
    OPTICAL ELEMENT 审中-公开

    公开(公告)号：US20200249488A1

    公开(公告)日：2020-08-06

    申请号：US16781135

    申请日：2020-02-04

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi NAKANISHI ,  Hironori TAKAHASHI

    IPC: G02B27/12 ,  G02B27/10

    Abstract: Provided is an optical element including: a main body which is formed of a medium capable of transmitting first light and second light having a wavelength longer than that of the first light, in which the main body includes an incident region into which the first light and the second light are incident, in which a gap which is inclined with respect to the incident region and in which a medium having a refractive index with respect to the first light and the second light lower than that of the main body is disposed is provided inside the main body, and in which a gap width from an interface bordering the main body and the gap is larger than a penetration length of an evanescent wave of the first light at the interface and is smaller than a penetration length of an evanescent wave of the second light at the interface.

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