公开(公告)号：US20230058064A1

公开(公告)日：2023-02-23

申请号：US17797193

申请日：2021-02-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tomonori NAKAMURA ,  Kenichi OHTSUKA ,  Satoshi ARANO ,  Kunihiko TSUCHIYA

IPC: G01B11/06 ,  G01B15/02

Abstract: A film thickness measuring apparatus includes a light irradiation unit configured to irradiate an object with light in a planar shape, an optical element having a transmittance and a reflectance changing according to wavelengths in a predetermined wavelength range, the optical element being configured to separate light from the object by transmitting and reflecting the light, an imaging unit configured to photograph light separated by the optical element, and an analysis unit configured to estimate a film thickness of the object based on a signal from the imaging unit photographing light, in which the light irradiation unit emits light having a wavelength included in the predetermined wavelength range of the optical element.

公开(公告)号：US20240240933A1

公开(公告)日：2024-07-18

申请号：US18561390

申请日：2022-01-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kunihiko TSUCHIYA ,  Satoshi ARANO ,  Kenichi OHTSUKA

IPC: G01B11/06

CPC classification number: G01B11/0625

Abstract: A film thickness measurement apparatus includes a light source that irradiates a sample with light, an area sensor that detects light from the sample and outputs a signal according to luminance information of the detected light, a spectrometer that spectrally detects light from the sample and outputs a signal according to wavelength information including a spectrum of the light, and a control apparatus that estimates a film thickness of the sample on the basis of the luminance information specified from the signal output from the area sensor and the wavelength information specified from the signal output from the spectrometer.

公开(公告)号：US20240125589A1

公开(公告)日：2024-04-18

申请号：US18276393

申请日：2021-11-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi OHTSUKA ,  Kazuya IGUCHI ,  Tomonori NAKAMURA

IPC: G01B11/06 ,  H01L21/67

CPC classification number: G01B11/0683 ,  H01L21/67069 ,  H01L21/67253 ,  G01B2210/56

Abstract: A film thickness measuring apparatus measures a film thickness of a sample during a manufacturing step. The film thickness measuring apparatus includes a lens focusing light (plasma light) generated in the manufacturing step and reflected by one surface of the sample, an inclined dichroic mirror having a transmissivity and a reflectivity changing in accordance with a wavelength in a predetermined wavelength region and separating light focused by the lens through transmission and reflection, an area sensor capturing an image of light separated by the inclined dichroic mirror, and a control apparatus estimating the film thickness of the sample on the basis of a signal from the area sensor capturing an image of light and obtaining a film thickness distribution on the one surface of the sample. Light reflected by the sample includes light having a wavelength included in the predetermined wavelength region of the inclined dichroic mirror.

公开(公告)号：US20220333913A1

公开(公告)日：2022-10-20

申请号：US17634298

申请日：2020-08-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ikuo ARATA ,  Satoshi TAKIMOTO ,  Kenichi OHTSUKA

IPC: G01B11/06 ,  G02B17/08

Abstract: An optical unit includes an input portion configured to have measurement light having a wavelength extending from an ultraviolet region to a visible region input thereto, an optical system configured to condense the measurement light in a state where a chromatic aberration is caused to occur, and an opening portion configured not to image light having a wavelength in the visible region and to image light having a wavelength in the ultraviolet region of the measurement light having a chromatic aberration having occurred therein.

公开(公告)号：US20210080250A1

公开(公告)日：2021-03-18

申请号：US16959683

申请日：2018-10-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi OHTSUKA

IPC: G01B11/06 ,  G01N21/45

Abstract: A film thickness measurement device includes a light output unit that outputs measurement light, a spectroscopic detection unit that detects detection light, and an analysis unit that compares a measured reflectance for each wavelength of a measurement object with a theoretical reflectance and analyzes a film thickness of a first film and a film thickness of a second film. The analysis unit acquire candidates for optimal solutions of the film thicknesses using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a first wavelength range and determines the optimal solutions of the film thicknesses out of the candidates for the optimal solutions using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a second wavelength range.

公开(公告)号：US20160349038A1

公开(公告)日：2016-12-01

申请号：US15114909

申请日：2014-10-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi OHTSUKA ,  Tetsuhisa NAKANO

IPC: G01B11/06

CPC classification number: G01B11/0625 ,  G01B11/0691 ,  G01N21/27

Abstract: A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.

Abstract translation: 膜厚测量装置1A包括用于将光发射到测量对象100的发光单元10，用于检测反射光的波长相关强度的光检测单元20A，以及用于确定反射光的膜厚度的膜厚计算单元30A 通过将根据光检测单元20A中的检测结果获得的测量光谱反射率与考虑到前表面反射率，前表面透射率和背面反射率的理论光谱反射率进行比较，来形成第一膜102。 膜厚计算单元30A将测量的光谱反射率与通过改变前表面反射率值，正面透射率值和背面反射率值而获得的理论光谱反射率的多个值进行比较，并且确定 基于最接近所测量的光谱反射率的理论光谱反射率的第一膜102。