METHOD FOR PRODUCING QUANTUM CASCADE LASER ELEMENT

    公开(公告)号:US20230143711A1

    公开(公告)日:2023-05-11

    申请号:US17914836

    申请日:2021-03-25

    CPC classification number: H01S5/3401 H01S5/2275 H01S5/0234

    Abstract: A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.

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