公开(公告)号：US20190013647A1

公开(公告)日：2019-01-10

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira HIGUCHI ,  Yoshitaka KUROSAKA ,  Tadataka EDAMURA ,  Masahiro HITAKA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/18394 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.

公开(公告)号：US20230079029A1

公开(公告)日：2023-03-16

申请号：US17944404

申请日：2022-09-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira HIGUCHI

IPC: H01S5/20 ,  H01S5/026

Abstract: An optical semiconductor device includes: a semiconductor substrate including a first main surface and a second main surface; a stacked body that is formed on the first main surface and includes an active layer and a contact layer arranged on a side opposite to the semiconductor substrate with respect to the active layer; a first electrode in contact with the contact layer; and a second electrode formed on the second main surface. The stacked body includes a light transmitting portion formed by not covering at least part of a surface of the contact layer on a side opposite to the semiconductor substrate with the first electrode. The optical semiconductor device is configured such that a waveguide mode is not formed by current application through the first electrode and the second electrode in a state in which the light transmitting portion is not in optical contact with an external member.

公开(公告)号：US20180301591A1

公开(公告)日：2018-10-18

申请号：US15903200

申请日：2018-02-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masamichi YAMANISHI ,  Akira HIGUCHI ,  Toru HIROHATA ,  Kazunori TANAKA ,  Kazuue FUJITA ,  Yasufumi TAKAGI ,  Yuta AOKI ,  Satoru OKAWARA

IPC: H01L33/00 ,  H05B33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46 ,  H01L33/32

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on a second clad layer; a second electrode that is disposed on the second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.