公开(公告)号：US20170243642A1

公开(公告)日：2017-08-24

申请号：US15500062

申请日：2014-10-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Naveen MURALIMANOHAR ,  Erik ORDENTLICH ,  Yoocharn JEON

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/0069 ,  G11C27/02 ,  G11C2013/0054 ,  G11C2013/0057 ,  G11C2013/0066 ,  G11C2213/77

Abstract: A method to access two memory cells include determining a first cell current flowing through a first memory cell by subtracting a sneak current associated with the first memory cell from a first access current of the first bitline and determining a second cell current flowing through a second memory cell in the first bitline or a second bitline by subtracting the sneak current associated with the first memory cell from a second access current of the first bitline or the second bitline.