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公开(公告)号：US09331278B2
公开(公告)日：2016-05-03
申请号：US14169375
申请日：2014-01-31
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Ning Ge , Zhiyong Li , Minxian Max Zhang
CPC classification number: B41J2/14072 , B41J2/04541 , B41J2/0458 , B41J2/14016 , B41J2/14129 , B41J2/1601 , B41J2/1607 , B41J2/1626 , B41J2/1631 , B41J2202/13 , H01L21/02565 , H01L27/24 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1633 , H01L45/1675
Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.
Abstract translation: 在成像装置上形成忆阻器可以包括形成包括第一导电材料的打印头主体，通过执行氧化处理在第一导电材料上形成切换氧化物材料，在开关上形成第二导电材料，在打印头主体上形成存储器 氧化物。
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公开(公告)号：US09558869B2
公开(公告)日：2017-01-31
申请号：US14845670
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
Abstract translation: 提供与负差分电阻（NDR）相关的装置和方法。 NDR装置包括间隔开的一对电极和设置在其间的至少两种不同的材料。 两种材料之一的特征在于负热膨胀，而另一种材料的特征在于正的热膨胀。 这两种材料的特征还有不同的电阻率。 NDR器件的特征在于包括负差分电阻范围的非线性电阻曲线。 NDR器件根据跨越该对电极的施加电压沿曲线工作。
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公开(公告)号：US20150114927A1
公开(公告)日：2015-04-30
申请号：US14169375
申请日：2014-01-31
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Ning Ge , Zhiyong Li , Minxian Max Zhang
IPC: B41J2/16
CPC classification number: B41J2/14072 , B41J2/04541 , B41J2/0458 , B41J2/14016 , B41J2/14129 , B41J2/1601 , B41J2/1607 , B41J2/1626 , B41J2/1631 , B41J2202/13 , H01L21/02565 , H01L27/24 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1633 , H01L45/1675
Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.
Abstract translation: 在成像装置上形成忆阻器可以包括形成包括第一导电材料的打印头主体，通过执行氧化处理在第一导电材料上形成切换氧化物材料，在开关上形成第二导电材料，在打印头主体上形成存储器 氧化物。
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Patent Agency Ranking
公开(公告)号：US08779409B2
公开(公告)日：2014-07-15
申请号：US13629946
申请日：2012-09-28
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Riberio , R. Stanley Williams
IPC: H01L47/00
CPC classification number: H01L45/04 , G11C13/0007 , G11C2213/15 , G11C2213/32 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
Abstract translation: 具有工程开关通道材料的低能忆阻器包括：第一电极; 第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括包含绝缘基质的第一相，其中分散有包含用于形成切换通道的导电复合材料的第二相。
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公开(公告)号：US20150380133A1
公开(公告)日：2015-12-31
申请号：US14845670
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
Abstract translation: 提供与负差分电阻（NDR）相关的装置和方法。 NDR装置包括间隔开的一对电极和设置在其间的至少两种不同的材料。 两种材料之一的特征在于负热膨胀，而另一种材料的特征在于正的热膨胀。 这两种材料的特征还有不同的电阻率。 NDR器件的特征在于包括负差分电阻范围的非线性电阻曲线。 NDR器件根据跨越该对电极的施加电压沿曲线工作。
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公开(公告)号：US20140091270A1
公开(公告)日：2014-04-03
申请号：US13629946
申请日：2012-09-28
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC: H01L45/00 , H01L21/8239
CPC classification number: H01L45/04 , G11C13/0007 , G11C2213/15 , G11C2213/32 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
Abstract translation: 具有工程开关通道材料的低能忆阻器包括：第一电极; 第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括包含绝缘基质的第一相，其中分散有包含用于形成切换通道的导电复合材料的第二相。
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公开(公告)号：US20160043312A1
公开(公告)日：2016-02-11
申请号：US14775811
申请日：2013-03-13
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC: H01L45/00
CPC classification number: H01L45/145 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1641
Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.
Abstract translation: 具有掺杂剂补偿开关的忆阻器，具有底电极的忆阻器，顶电极和夹在底电极和顶电极之间的有源区。 有源区由电绝缘材料和导电材料构成。 绝缘材料包括补偿掺杂剂以部分或完全补偿绝缘材料中的天然掺杂剂。 制作忆阻器的方法也被披露。
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公开(公告)号：US20160028005A1
公开(公告)日：2016-01-28
申请号：US14871156
申请日：2015-09-30
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC: H01L45/00
CPC classification number: H01L45/1658 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/1608
Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
Abstract translation: 公开了一种包括掺杂剂源的忆阻器。 该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子 开关材料。 还公开了一种用于制造包括掺杂剂源的忆阻器的方法。
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