公开(公告)号：US20200303505A1

公开(公告)日：2020-09-24

申请号：US16673017

申请日：2019-11-04

Applicant: Hitachi, Ltd.

Inventor： Masahiro MASUNAGA ,  Shintaroh SATO ,  Akio SHIMA ,  Ryo KUWANA ,  Isao HARA

IPC: H01L29/16 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28

Abstract: An n type semiconductor layer is formed over an n type semiconductor substrate made of silicon carbide, a p type impurity region is formed in the semiconductor layer, and an n type drain region and an n type source region are formed in the impurity region. A field insulating film having an opening that selectively opens a part of the impurity region located between the drain and source regions is formed over the impurity region and the drain and source regions. A gate insulating film is formed over the impurity region in the opening, and a gate electrode is formed on the gate insulating film. Here, a field relaxation layer having an impurity concentration higher than that of the impurity region is formed in at least a part of the impurity region located between the drain and source regions in plan view and located below the field insulating film.

公开(公告)号：US20240080000A1

公开(公告)日：2024-03-07

申请号：US18119338

申请日：2023-03-09

Applicant: HITACHI, LTD.

Inventor： Masahiro MASUNAGA ,  Ryo KUWANA ,  Shinji NOMOTO ,  Isao HARA

IPC: H03F1/26 ,  G01L19/00 ,  G01L27/00

CPC classification number: H03F1/26 ,  G01L19/0092 ,  G01L27/005

Abstract: The measuring instrument includes a sensor unit that measures a predetermined physical quantity; an amplifier circuit that amplifies a signal output from the sensor unit; and a linear power supply that supplies power to the amplifier circuit, in which the amplifier circuit includes a first amplifier having a first transistor using a SiC semiconductor, the linear power supply includes a second amplifier having a second transistor using the SiC semiconductor, and noise characteristics of the first amplifier are superior to noise characteristics of the second amplifier.

公开(公告)号：US20160299023A1

公开(公告)日：2016-10-13

申请号：US15075485

申请日：2016-03-21

Applicant: HITACHI, LTD.

Inventor： Ryo KUWANA ,  Daisuke SHINMA ,  Atsushi FUSHIMI ,  Hideki HANAMI ,  Isao HARA

IPC: G01L7/08

CPC classification number: G01L7/08 ,  G01L13/025 ,  G01L19/0645

Abstract: Provided is a pressure transmitter device including: a pressure receiving diaphragm in contact with a measuring fluid; a fill fluid, in contact with an opposite side of the pressure receiving diaphragm to the other side in contact with the measuring fluid, for transferring a pressure received by the pressure receiving diaphragm from the measuring fluid to a sensor disposed at a position apart from the pressure receiving diaphragm; a hydraulic path filled with the fill fluid and connecting the pressure receiving diaphragm and the sensor; and an output circuit for measuring and outputting an absolute pressure of the measuring fluid or a differential pressure between measuring fluids based on the pressure received by the sensor, where a hydrocarbon absorbing material for absorbing hydrocarbon and a hydrogen occlusion material for occluding hydrogen are provided inside the hydraulic path.

Abstract translation: 提供一种压力传感器装置，包括：与测量流体接触的压力接收膜; 与所述压力接收膜片的与所述测量流体接触的另一侧的相对侧接触的填充流体，用于将由所述压力接收膜片接收的压力从所述测量流体传递到设置在离开所述测量流体的位置处的传感器 受压隔膜; 填充有填充流体并连接压力接收膜片和传感器的液压路径; 以及输出电路，其用于测量和输出测量流体的绝对压力或测量流体之间的压差，基于由传感器接收的压力，其中用于吸收烃的吸收烃和用于吸藏氢的吸氢材料设置在内部 液压路径。

公开(公告)号：US20150107365A1

公开(公告)日：2015-04-23

申请号：US14516115

申请日：2014-10-16

Applicant: Hitachi, Ltd.

Inventor： Setsuo ARITA ,  Ryo KUWANA ,  Atsushi BABA ,  Atsushi FUSHIMI ,  Daisuke SHINMA ,  Hideki HANAMI ,  Isao HARA ,  Takashi ITOU

IPC: G01L7/08

CPC classification number: G01L7/088 ,  G01L7/08 ,  G01L13/026 ,  G01L19/0645

Abstract: A pressure transmitter including tube-like pressure introducing pipes, a sealed-in liquid, the inside of the pressure introducing pipes being filled with the sealed-in liquid, pressure receiving diaphragms for receiving the pressures of measurement fluids, the pressure receiving diaphragms being set up in a state where one-side apertures in the pressure introducing pipes are blocked by the pressure receiving diaphragms, and a pressure sensor that is set up in common to the other-side apertures in the pressure introducing pipes in a state where the pressure sensor is exposed to the sealed-in liquid, wherein the sealed-in liquid is silicon oil containing phenyl groups, the pressure transmitter further including a hydrogen-storage material that is set up inside the pressure introducing pipes.

Abstract translation: 一种压力变送器，包括管状压力引入管，密封液体，压力导入管内部填充有密封液体，受压隔膜用于接收测量流体的压力，压力接收膜片被设定 在压力导入管中的一侧孔被压力接收膜片阻挡的状态下，在压力传感器的状态下与压力导入管的另一侧孔共同设置的压力传感器 暴露于密封液体中，其中密封的液体是含有苯基的硅油，压力变送器还包括设置在压力引入管内的储氢材料。

公开(公告)号：US20250088157A1

公开(公告)日：2025-03-13

申请号：US18586906

申请日：2024-02-26

Applicant: Hitachi, Ltd.

Inventor： Masahiro MASUNAGA ,  Shinji NOMOTO ,  Ryo KUWANA ,  Isao HARA

IPC: H03F3/45

Abstract: Provided is a semiconductor device including: an amplifier configured by an element made of silicon carbide, and including a differential amplifier circuit that amplifies an input signal; and a power supply circuit that supplies a voltage to the amplifier. Here, the voltage fluctuation amount reduction circuit is inserted between the power supply circuit and the amplifier. As a result, it possible to appropriately eliminate an influence of drift when the amplifier is configured by a semiconductor made of silicon carbide.

公开(公告)号：US20210050348A1

公开(公告)日：2021-02-18

申请号：US16937061

申请日：2020-07-23

Applicant: Hitachi, Ltd.

Inventor： Ryo KUWANA ,  Masahiro MASUNAGA ,  Mutsumi SUZUKI ,  Isao HARA

IPC: H01L27/088 ,  H01L23/00 ,  H01L23/498 ,  G01L9/00 ,  G21C17/00

Abstract: Provided is a SiC semiconductor element equipped with a SiC integrated circuit having a stable characteristic, which operates normally even in a radiation environment. A radiation resistant circuit device includes: a SiC semiconductor element equipped with a SiC integrated circuit, a printed board on which the SiC semiconductor element is provided, a conductive wiring that is arranged inside the printed board and has a predetermined surface facing a bottom surface of a substrate electrode of the SiC integrated circuit, and an insulating material arranged between the bottom surface of the substrate electrode of the SiC integrated circuit and the predetermined surface of the conductive wiring.

公开(公告)号：US20190326393A1

公开(公告)日：2019-10-24

申请号：US16265455

申请日：2019-02-01

Applicant: HITACHI, LTD.

Inventor： Masahiro MASUNAGA ,  Akio SHIMA ,  Shintaroh SATO ,  Ryo KUWANA

IPC: H01L29/06 ,  H01L29/08 ,  H01L23/535 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L29/16 ,  H01L29/45

Abstract: A MOSFET that has a drain region and a source region on an upper surface of a semiconductor substrate and a gate electrode that is formed on the semiconductor substrate, and an element separation insulating film that includes an opening portion which exposes an active region, on the semiconductor substrate, are formed. At this point, a gate leading-out interconnection that overlaps the element separation insulating film when viewed from above, and that is integrally combined with the gate electrode is formed in a position where the gate leading-out interconnection does not extend over a distance between both the drain region and the source region when viewed from above, on a region that is exposed from the gate electrode.

公开(公告)号：US20250080071A1

公开(公告)日：2025-03-06

申请号：US18586892

申请日：2024-02-26

Applicant: Hitachi, Ltd.

Inventor： Ryo KUWANA ,  Masahiro MASUNAGA ,  Isao HARA

IPC: H03F3/45 ,  H03F1/26

Abstract: An amplification device includes: an amplification circuit in which a differential amplification unit to which a pair of input signals is input is constituted by a pair of transistors using SiC as a channel and which amplifies and outputs a difference in voltage between the pair of input signals; and a voltage control unit which controls voltages of respective signal input terminals to which the pair of input signals is input to be equal to or less than voltages of a positive power supply and a negative power supply supplied to the amplification circuit.

公开(公告)号：US20150135842A1

公开(公告)日：2015-05-21

申请号：US14532456

申请日：2014-11-04

Applicant: HITACHI, LTD.

Inventor： Ryo KUWANA ,  Atsushi FUSHIMI ,  Daisuke SHINMA ,  Hideki HANAMI ,  Isao HARA

IPC: G01L7/08

CPC classification number: G01L7/08 ,  G01L13/026 ,  G01L19/06

Abstract: In a pressure and pressure difference transmitter that seals a sealing liquid for transmitting the pressure inside a pressure leading passage, the pressure and pressure difference transmitter forming a space between a diaphragm and a main body side wall surface, including the pressure leading passage connected to the main body side wall surface, and transmitting the pressure received by the diaphragm to a sensor through the sealing liquid sealed in the space and the pressure leading passage, a hydrogen occluding material for occluding hydrogen atoms of the sealing liquid is disposed at least in the sealing liquid, the main body side wall surface, or a part of a portion from the main body side wall surface to the sensor, with the hydrogen occluding material being formed with an uneven shape on the surface or being attached with a granular hydrogen occluding material.

Abstract translation: 在压力传感器和压力差传感器中，密封用于传递压力导向通道内的压力的密封液体，所述压力差压变送器在隔膜与主体侧壁面之间形成空间，包括连接到 主体侧壁表面，并且通过密封在空间和压力导向通道中的密封液将由隔膜接收的压力传递到传感器，用于封闭密封液体氢原子的吸留氢材料至少设置在密封件 液体，主体侧壁表面或从主体侧壁表面到传感器的一部分的一部分，其中吸氢材料在表面上形成为不均匀的形状，或者附着有颗粒状吸氢材料。

公开(公告)号：US20150107364A1

公开(公告)日：2015-04-23

申请号：US14515731

申请日：2014-10-16

Applicant: Hitachi, Ltd.

Inventor： Ryo KUWANA ,  Setsuo ARITA ,  Atsushi BABA ,  Atsushi FUSHIMI ,  Daisuke SHINMA ,  Hideki HANAMI ,  Isao HARA ,  Takashi ITOU

IPC: G01L7/08

CPC classification number: G01L7/088 ,  G01L7/082 ,  G01L13/026 ,  G01L19/0645

Abstract: A pressure transmitter including tube-like pressure introducing pipes, a sealed-in liquid, the inside of the pressure introducing pipes being filled with the sealed-in liquid, pressure receiving diaphragms for receiving the pressures of measurement fluids, the pressure receiving diaphragms being set up in a state where one-side apertures in the pressure introducing pipes are blocked by the pressure receiving diaphragms, a pressure sensor that is set up in common to the other-side apertures in the pressure introducing pipes in a state where the pressure sensor is exposed to the sealed-in liquid, and hydrogen-permeation prevention layers that are set up on the pressure receiving diaphragms, wherein the pressure transmitter further includes a hydrogen-storage material that is set up inside the pressure introducing pipes.

Abstract translation: 一种压力变送器，包括管状压力引入管，密封液体，压力导入管内部填充有密封液体，受压隔膜用于接收测量流体的压力，压力接收膜片被设定 在压力导入管中的一侧孔被受压隔膜阻挡的状态下，在压力传感器为压力传感器的状态下与压力导入管的其他侧孔共同设置的压力传感器 暴露于密封的液体中，以及设置在受压隔膜上的防渗透层，其中压力变送器还包括设置在压力引入管内的储氢材料。