公开(公告)号：US20240310827A1

公开(公告)日：2024-09-19

申请号：US18026201

申请日：2022-03-24

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Masahiro Sumiya ,  Akira Kagoshima ,  Satoru Matsukura ,  Yuji Nagatani

IPC: G05B23/02 ,  G05B19/048 ,  H01L21/67

CPC classification number: G05B23/0283 ,  G05B19/048 ,  G05B23/024 ,  H01L21/67253 ,  G05B2219/45031

Abstract: An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.

公开(公告)号：US11643727B2

公开(公告)日：2023-05-09

申请号：US16207434

申请日：2018-12-03

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Akira Kagoshima ,  Daisuke Shiraishi ,  Yuji Nagatani

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/52 ,  C23C16/50 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935

Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.