公开(公告)号：US20210074528A1

公开(公告)日：2021-03-11

申请号：US16950179

申请日：2020-11-17

Applicant: Hitachi High-Tech Corporation

Inventor： Ryoji Asakura ,  Shota Umeda ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US12014909B2

公开(公告)日：2024-06-18

申请号：US16950179

申请日：2020-11-17

Applicant: Hitachi High-Tech Corporation

Inventor： Ryoji Asakura ,  Shota Umeda ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01J37/32 ,  G01J3/443 ,  H01L21/67

CPC classification number: H01J37/32926 ,  G01J3/443 ,  H01L21/67069 ,  H01L21/67253 ,  H01J2237/334

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US10734207B2

公开(公告)日：2020-08-04

申请号：US15445203

申请日：2017-02-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryoji Asakura ,  Daisuke Shiraishi ,  Akira Kagoshima ,  Satomi Inoue

IPC: H01J37/32 ,  G01J3/28 ,  G01J3/02 ,  G01J3/443

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

公开(公告)号：US20240310827A1

公开(公告)日：2024-09-19

申请号：US18026201

申请日：2022-03-24

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Masahiro Sumiya ,  Akira Kagoshima ,  Satoru Matsukura ,  Yuji Nagatani

IPC: G05B23/02 ,  G05B19/048 ,  H01L21/67

CPC classification number: G05B23/0283 ,  G05B19/048 ,  G05B23/024 ,  H01L21/67253 ,  G05B2219/45031

Abstract: An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.

公开(公告)号：US11643727B2

公开(公告)日：2023-05-09

申请号：US16207434

申请日：2018-12-03

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Akira Kagoshima ,  Daisuke Shiraishi ,  Yuji Nagatani

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/52 ,  C23C16/50 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935

Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

公开(公告)号：US20220328286A1

公开(公告)日：2022-10-13

申请号：US17851191

申请日：2022-06-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryoji Asakura ,  Kenji Tamaki ,  Akira Kagoshima ,  Daisuke Shiraishi

IPC: H01J37/32

Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

公开(公告)号：US11289313B2

公开(公告)日：2022-03-29

申请号：US16123208

申请日：2018-09-06

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Shota Umeda ,  Keita Nogi ,  Akira Kagoshima ,  Daisuke Shiraishi

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443 ,  G05B19/418

Abstract: Provided is a plasma processing apparatus including a processing unit in which a sample is plasma processed and which includes a monitor (optical emission spectroscopy) that monitors light emission of plasma, wherein the processing unit includes a prediction model storage unit that stores a prediction model predicting a plasma processing result, and a control device in which the plasma processing result is predicted by using a prediction model selected based on light emission data and device data as an indicator of state change of the processing unit.