公开(公告)号：US20160284610A1

公开(公告)日：2016-09-29

申请号：US14852189

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

Abstract translation: 一种处理层结构的等离子体处理方法，其特征在于，预先形成在设置在真空容器内的处理室中的晶片的上表面上并且具有被处理层和底层涂层的处理层结构， 通过将实际图案数据与实际图案数据进行比较的结果来计算在待处理的层处理的层的蚀刻量的步骤，该检测图案数据通过组合通过处理该层获得的干涉光的参数波长的两种强度图案而获得 具有不同厚度的三层或多层底涂层的结构以及处理任何晶片之前要处理的层和具有作为在任何晶片上的层结构的处理期间获得的干涉光的波长的参数的面积图案 。

公开(公告)号：US20200273683A1

公开(公告)日：2020-08-27

申请号：US16642187

申请日：2019-02-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuta TAKAGI ,  Kosa HIROTA ,  Yoshiharu INOUE ,  Masakazu MIYAJI

IPC: H01J37/32

Abstract: A plasma processing method includes an etching step of etching a wafer in a chamber, a plasma cleaning step of removing a particle on an inner wall of the chamber by introducing a gas containing a halogen element into the chamber by a plasma processing method for removing remaining halogen or the like in the chamber in a short time and improving throughput, and a remaining halogen removing step of removing the halogen element remaining in the chamber in the plasma cleaning step by alternately repeating an on state and an off state of the plasma containing oxygen in the chamber.

公开(公告)号：US20170358504A1

公开(公告)日：2017-12-14

申请号：US15673151

申请日：2017-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

公开(公告)号：US20200294777A1

公开(公告)日：2020-09-17

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kosa HIROTA ,  Masahiro SUMIYA ,  Koichi NAKAUNE ,  Nanako TAMARI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US20170372878A1

公开(公告)日：2017-12-28

申请号：US15677260

申请日：2017-08-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito TOGAMI ,  Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32458 ,  H01J37/32908 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/0266 ,  H01J2237/2445 ,  H01J2237/3341

Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.