公开(公告)号：US20190189403A1

公开(公告)日：2019-06-20

申请号：US16216455

申请日：2019-03-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Luke Joseph HIMBELE ,  Yasushi SONODA ,  Takashi UEMURA ,  Tomoyoshi ICHIMARU ,  Junya SASAKI

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  F16K31/12 ,  F16K31/06 ,  F16K51/02

CPC classification number: H01J37/32449 ,  C23C16/45536 ,  F16K31/0603 ,  F16K31/0675 ,  F16K31/12 ,  F16K51/02 ,  H01J37/32192 ,  H01L21/3065

Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.