公开(公告)号：US20190189403A1

公开(公告)日：2019-06-20

申请号：US16216455

申请日：2019-03-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Luke Joseph HIMBELE ,  Yasushi SONODA ,  Takashi UEMURA ,  Tomoyoshi ICHIMARU ,  Junya SASAKI

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  F16K31/12 ,  F16K31/06 ,  F16K51/02

CPC classification number: H01J37/32449 ,  C23C16/45536 ,  F16K31/0603 ,  F16K31/0675 ,  F16K31/12 ,  F16K51/02 ,  H01J37/32192 ,  H01L21/3065

Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.

公开(公告)号：US20190164725A1

公开(公告)日：2019-05-30

申请号：US16135437

申请日：2018-09-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masatoshi KAWAKAMI ,  Kohei SATO ,  Yasushi SONODA ,  Masahiro NAGATANI ,  Makoto KASHIBE

IPC: H01J37/32

Abstract: There is provided a plasma processing apparatus and a plasma processing method for efficiently processing a wafer using plasma. The plasma processing apparatus includes two processing steps and a bridging step between the two processing steps. The plasma processing apparatus includes: a first gas supply unit which supplies a processing-use gas into the processing chamber during the processing step; a second gas supply unit which supplies a bridging-use gas into the processing chamber during the bridging step; a gas switching unit for switching the supply of the processing-use gas from the first gas supply unit and the bridging-use gas from the second gas supply unit to the processing chamber in transition between the two processing steps and the bridging step; and a control part which is configured to regulate a flow rate of the bridging-use gas to be supplied during the bridging step to a flow rate regarded equal to a supply amount of the processing-use gas to be supplied during a succeeding processing step out of the two processing steps.

公开(公告)号：US20180277402A1

公开(公告)日：2018-09-27

申请号：US15719149

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masatoshi KAWAKAMI ,  Motohiro TANAKA ,  Yasushi SONODA ,  Kohei SATO ,  Naoki YASUI

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/334

Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

公开(公告)号：US20190088453A1

公开(公告)日：2019-03-21

申请号：US15902799

申请日：2018-02-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasushi SONODA ,  Naoki YASUI ,  Motohiro TANAKA ,  Koichi YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil. A response time constant of the first power source is smaller than a response time constant of the second power source.

公开(公告)号：US20180151336A1

公开(公告)日：2018-05-31

申请号：US15708449

申请日：2017-09-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Yusaku SAKKA ,  Hiromichi KAWASAKI ,  Tsutomu IIDA ,  Hiromitsu TERAUCHI ,  Masahiro NAGATANI ,  Yasushi SONODA

IPC: H01J37/32 ,  H01L21/67

Abstract: A vacuum processing apparatus includes a vacuum processing chamber, an upper electrode, a lower electrode, a first high-frequency power source, a second high-frequency power source, a first matching box, a second matching box, a copper plate for connecting an electrode shaft of the lower electrode with the second matching box, a drive base on which the electrode shaft of the lower electrode and the second matching box are mounted, a drive unit for ascending or descending the drive base, and an exhaust unit disposed at a position equally distanced from an exhaust outlet by a distance.

公开(公告)号：US20160133530A1

公开(公告)日：2016-05-12

申请号：US14625931

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasushi SONODA ,  Motohiro TANAKA

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.

Abstract translation: 一种等离子体处理装置，包括：处理室，被配置为对样品进行等离子体处理;被配置为产生等离子体的第一射频电源;被配置为将样品放置在其上的样品台;第二射频电源， 对样品台的射频电力，被配置为将气体供应到处理室中的质量流量控制器，以及控制装置，被配置为基于从第一射频电源或第二射频电源提供的射频功率，基于 将第一气体切换到第二气体之后的等离子体阻抗的变化。