公开(公告)号：US20190148108A1

公开(公告)日：2019-05-16

申请号：US16161140

申请日：2018-10-16

Applicant: Hitachi High-Technologies Corporation

Inventor： Wei SUN ,  Yasunari SOHDA ,  Taku NINOMIYA ,  Yasunori GOTO

IPC: H01J37/28 ,  H01J37/244

Abstract: A pattern measuring device ensures highly accurately measuring a depth and a three-dimensional shape irrespective of a formation accuracy of a deep trench and/or a deep hole. Therefore, in the present invention, the measuring system detects backscattered electrons from a pattern caused by an irradiation, compares backscattered electron signal intensities from a top surface, a bottom surface, and a sidewall of the pattern, and calculates a three-dimensional shape (or height information) of the sidewall based on a difference in heights of the top surface and the lower surface. The measuring system compares the calculated three-dimensional shape of the sidewall with a three-dimensional shape of the sidewall estimated based on an intensity distribution (open angle) of a primary electron beam, corrects the estimated three-dimensional shape of the sidewall based on a difference in the comparison, and corrects until the difference in the comparison becomes an acceptable value.

公开(公告)号：US20160071688A1

公开(公告)日：2016-03-10

申请号：US14786039

申请日：2014-04-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasunori GOTO ,  Takuma YAMAMOTO

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/22 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L22/12

Abstract: Provided is a sample observation apparatus including a charged particle optical column that, irradiates a sample including an observation target portion that is a concave portion with a charged particle beam at an acceleration voltage, an image generation section that acquires an image including the observation target portion from a signal acquired with irradiation of the charged particle beam, a storage section that stores information representing a relationship between a brightness ratio of a concave portion and its neighboring portion of a reference sample that is irradiated with the charged particle beam at the acceleration voltage and a value that represents a structure of the concave portions of the reference sample in advance, a calculation section that acquires a brightness ratio of the concave portion and its neighboring portion of the image, and a determination section that determines whether or not a defect occurs in the observation target portion based on the information that represents the relationship and the brightness ratio of the image.

Abstract translation: 本发明提供一种样本观察装置，其包括带电粒子光学柱，其将包括具有加速电压的带有带电粒子束的凹部的观察对象部的样本照射到获取包含观察对象部的图像的图像生成部 存储部分，其存储表示在加速电压下照射带电粒子束的参考样本的凹部的亮度与其相邻部分的亮度比之间的关系的信息;以及存储部， 预先表示参考样本的凹部的结构的值，获取图像的凹部及其相邻部分的亮度比的计算部，以及判断是否发生缺陷的判定部 基于信息th的观察目标部分 at表示图像的关系和亮度比。

公开(公告)号：US20160056014A1

公开(公告)日：2016-02-25

申请号：US14888792

申请日：2014-03-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takuma YAMAMOTO ,  Yasunori GOTO ,  Fumihiko FUKUNAGA

IPC: H01J37/22 ,  G01B15/00 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01B15/00 ,  G03F7/70633 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: When a scanning electron microscope is used to measure a superposition error between upper-layer and lower-layer patterns, an SN of the lower-layer pattern may often be lower, so that when simple frame adding processing is used, the adding processing needs to be performed many times. Further, in an image obtained through such simple adding processing, contrast may not be optimal for both the upper-layer and lower-layer patterns. In a superposition measuring apparatus and superposition measuring method that measure a difference between a position of an upper-layer pattern and a position of a lower-layer pattern by using an image obtained by irradiation of a charged particle ray, portions of images having contrasts optimized for the respective upper-layer and lower-layer patterns are added to generate a first added image optimized for the upper-layer pattern and a second added image optimized for the lower-layer pattern, and the difference between the position of the upper-layer pattern identified by using the first added image and position of the lower-layer pattern identified by using the second added image is calculated.

Abstract translation: 当使用扫描电子显微镜来测量上层和下层图案之间的叠加误差时，下层图案的SN通常可能较低，因此当使用简单的帧添加处理时，添加处理需要 执行多次。 此外，在通过这种简单的添加处理获得的图像中，对比度对于上层图案和下层图案都不是最佳的。 在通过使用通过照射带电粒子射线获得的图像来测量上层图案的位置和下层图案的位置之间的差异的叠加测量装置和叠加测量方法中，将具有对比度的优化的图像的部分 为了生成针对上层图案而优化的第一添加图像和针对下层图案优化的第二附加图像，并且上层和下层图案的位置之间的差异 计算通过使用第一添加图像识别的图案和通过使用第二添加图像识别的下层图案的位置。

公开(公告)号：US20190033728A1

公开(公告)日：2019-01-31

申请号：US16070708

申请日：2016-01-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuji TAKAGI ,  Fumihiko FUKUNAGA ,  Yasunori GOTO

IPC: G03F7/20 ,  G06K9/62 ,  G06T7/00 ,  H01L23/544

Abstract: An overlay measurement method using a reference image is an effective method for an overlay measurement in a product circuit. However, there is a problem that it is not possible to obtain an ideal reference image in a process of prototyping.A measurement device described in a specific embodiment of the present invention includes an imaging unit that captures an image of a circuit pattern of a semiconductor wafer surface by an optical microscope or an electronic microscope, a pattern recognition unit that extracts a first pattern and a second pattern from the image captured by the imaging unit, a reference image generation unit that synthesizes a first reference image using the first pattern extracted from a plurality of the images and synthesizes a second reference image using the second pattern extracted from the plurality of images, a quantification unit that quantifies a first difference that is a difference between the first reference image and the first pattern and a second difference that is a difference between the second reference image and the second pattern, and a calculation unit that calculates an overlay amount included in the circuit pattern using the first difference and the second difference.

公开(公告)号：US20170322021A1

公开(公告)日：2017-11-09

申请号：US15329519

申请日：2015-08-03

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuji TAKAGI ,  Fumihiko FUKUNAGA ,  Yasunori GOTO

IPC: G01B15/04 ,  G06K9/20

CPC classification number: G01B15/04 ,  G03F7/70633 ,  G06K9/20 ,  G06K2009/2045 ,  G06T7/001 ,  G06T7/32 ,  G06T2207/10024 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: To address the problem in which when measuring the overlay of patterns formed on upper and lower layers of a semiconductor pattern by comparing a reference image and measurement image obtained through imaging by an SEM, the contrast of the SEM image of the pattern of the lower layer is low relative to that of the SEM image of the pattern of the upper layer and alignment state verification is difficult even if the reference image and measurement image are superposed on the basis of measurement results, the present invention determines the amount of positional displacement of patterns of an object of overlay measurement from a reference image and measurement image obtained through imaging by an SEM, carries out differential processing on the reference image and measurement image, aligns the reference image and measurement image that have been subjected to differential processing on the basis of the positional displacement amount determined previously, expresses the gradation values of the aligned differential reference image and differential measurement image as brightnesses of colors that differ for each image, superposes the images, and displays the superposed images along with the determined positional displacement amount.

公开(公告)号：US20190362933A1

公开(公告)日：2019-11-28

申请号：US16332212

申请日：2017-09-14

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuji TAKAGI ,  Fumihiko FUKUNAGA ,  Yasunori GOTO

IPC: H01J37/28 ,  H01J37/26 ,  G01N23/2251 ,  G01N21/47 ,  G01N21/95 ,  H01J37/22

Abstract: An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.