GAS ANALYSIS DEVICE AND GAS ANALYSIS METHOD
    1.
    发明公开

    公开(公告)号:US20230417660A1

    公开(公告)日:2023-12-28

    申请号:US18039316

    申请日:2021-11-22

    CPC classification number: G01N21/3504 G01N21/0332 G01N21/39 G01N2201/127

    Abstract: The present invention is a gas analysis device that measures a concentration or partial pressure of a halide contained in a material gas used in semiconductor manufacturing process or a by-product gas generated in semiconductor manufacturing process with good accuracy, the device being for analyzing a concentration or partial pressure of a halide contained in a material gas used in a semiconductor manufacturing process or a by-product gas generated in a semiconductor manufacturing process, the device including a gas cell into which the material gas or the by-product gas is introduced, a laser light source that irradiates the gas cell with laser light whose wavelength is modulated, a light detector that detects the laser light transmitted through the gas cell, and a signal processing unit that calculates the concentration or partial pressure of the halide by using a light absorption signal obtained from an output signal of the light detector.

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