利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.028 秒)

    PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE
    1.
    发明申请
    PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 有权
    精密高频电容器在半导体衬底上形成

    公开(公告)号：US20080108202A1

    公开(公告)日：2008-05-08

    申请号：US11966965

    申请日：2007-12-28

    申请人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    发明人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    IPC分类号： H01L21/283

    CPC分类号： H01G4/33 ,  H01G4/38 ,  H01L23/481 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2924/13091 ,  Y10S438/957 ,  H01L2924/014 ,  H01L2924/00

    摘要： A method of fabricating a capacitor in a semiconductor substrate. The semiconductor substrate is doped to have a low resistivity. A second electrode, insulated from a first electrode, is formed over a front side surface and connected by a metal-filled via to the back side surface. The via may be omitted and the second electrode may be in electrical contact with the substrate or may be formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor is provided by a pair of oppositely-directed diodes formed in the substrate connected in parallel with the capacitor. Capacitance is increased while maintaining a low effective series resistance. Electrodes include a plurality of fingers, which are interdigitated with the fingers of other electrode. The capacitor is fabricated in a wafer-scale process with other capacitors, where capacitors are separated from each other by a dicing technique.

    摘要翻译： 一种在半导体衬底中制造电容器的方法。 掺杂半导体衬底以具有低电阻率。 与第一电极绝缘的第二电极形成在前侧表面上，并且通过金属填充的通孔连接到背侧表面。 可以省略通孔，并且第二电极可以与衬底电接触，或者可以形成在介电层的顶部，从而产生一对串联电容器。 电容器的ESD保护由形成在与电容器并联连接的衬底中的一对相反方向的二极管提供。 电容增加同时保持低有效的串联电阻。 电极包括多个指状物，其与另一个电极的指状物交叉指向。 电容器采用具有其他电容器的晶片级工艺制造，其中电容器通过切割技术彼此分离。

    Precision high-frequency capacitor formed on semiconductor substrate
    2.
    发明授权
    Precision high-frequency capacitor formed on semiconductor substrate 有权
    精密高频电容器形成于半导体基板上

    公开(公告)号：US08324711B2

    公开(公告)日：2012-12-04

    申请号：US13075752

    申请日：2011-03-30

    申请人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    发明人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    IPC分类号： H01L21/02

    CPC分类号： H01G4/33 ,  H01G4/38 ,  H01L23/481 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2924/13091 ,  Y10S438/957 ,  H01L2924/014 ,  H01L2924/00

    摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

    摘要翻译： 精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。 半导体衬底是重掺杂的，因此具有低电阻率。 与第一电极绝缘的第二电极也形成在前侧表面上。 在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。 在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。 电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。 为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。 电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

    PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE
    4.
    发明申请
    PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 有权
    精密高频电容器在半导体衬底上形成

    公开(公告)号：US20110176247A1

    公开(公告)日：2011-07-21

    申请号：US13075752

    申请日：2011-03-30

    申请人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    发明人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    IPC分类号： H02H9/00 ,  H01L21/20 ,  H01L29/92

    CPC分类号： H01G4/33 ,  H01G4/38 ,  H01L23/481 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2924/13091 ,  Y10S438/957 ,  H01L2924/014 ,  H01L2924/00

    摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

    摘要翻译： 精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。 半导体衬底是重掺杂的，因此具有低电阻率。 与第一电极绝缘的第二电极也形成在前侧表面上。 在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。 在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。 电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。 为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。 电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

    Precision high-frequency capacitor formed on semiconductor substrate
    5.
    发明申请
    Precision high-frequency capacitor formed on semiconductor substrate 有权
    精密高频电容器形成于半导体基板上

    公开(公告)号：US20100295152A1

    公开(公告)日：2010-11-25

    申请号：US11601501

    申请日：2006-11-16

    申请人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    发明人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    IPC分类号： H01L29/92

    CPC分类号： H01G4/33 ,  H01G4/38 ,  H01L23/481 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2924/13091 ,  Y10S438/957 ,  H01L2924/014 ,  H01L2924/00

    摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

    摘要翻译： 精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。 半导体衬底是重掺杂的，因此具有低电阻率。 与第一电极绝缘的第二电极也形成在前侧表面上。 在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。 在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。 电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。 为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。 电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

    Precision high-frequency capacitor formed on semiconductor substrate
    6.
    发明授权
    Precision high-frequency capacitor formed on semiconductor substrate 有权
    精密高频电容器形成于半导体基板上

    公开(公告)号：US08004063B2

    公开(公告)日：2011-08-23

    申请号：US11601501

    申请日：2006-11-16

    申请人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    发明人： Haim Goldberger ,  Sik Lui ,  Jacek Korec ,  Y. Mohammed Kasem ,  Harianto Wong ,  Jack Van Den Heuvel

    IPC分类号： H01L29/92

    CPC分类号： H01G4/33 ,  H01G4/38 ,  H01L23/481 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2924/13091 ,  Y10S438/957 ,  H01L2924/014 ,  H01L2924/00

    摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

    摘要翻译： 精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。 半导体衬底是重掺杂的，因此具有低电阻率。 与第一电极绝缘的第二电极也形成在前侧表面上。 在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。 在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。 电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。 为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。 电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。